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    Low pass filter
    5.
    发明授权
    Low pass filter 有权

    公开(公告)号：US10297892B2

    公开(公告)日：2019-05-21

    申请号：US16031112

    申请日：2018-07-10

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Mikiko Fukasawa

    IPC: H01P1/202 ,  H04B1/18 ,  H04W72/08 ,  H03F1/32 ,  H03F3/24 ,  H03H7/01 ,  H03H7/12 ,  H03F3/195 ,  H04B1/04 ,  H03F1/56

    Abstract: When a plurality of RF signals having different frequer bands are output at the same time by carrier aggregation, a switch element allows parallel connection between two capacitance elements such that a low pass filter has a first cut-off frequency that is lower than the frequency of an intermodulation distortion signal generated by the carrier aggregation. When an RF signal of a frequency band is output, the switch element releases parallel connection between the two capacitance elements such that the low pass filter has a second cut-off frequency that is higher than the first cut-off frequency.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE 有权

    公开(公告)号：US20220199548A1

    公开(公告)日：2022-06-23

    申请号：US17644043

    申请日：2021-12-13

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Satoshi GOTO ,  Masayuki Aoike ,  Mikiko Fukasawa

    IPC: H01L23/552 ,  H01L23/00 ,  H01L23/498

    Abstract: A semiconductor device includes first and second members. In the first member, a first electronic circuit including a semiconductor element is formed. The second member is joined to an area of part of a first surface of the first member, and includes a second electronic circuit including a semiconductor element formed of a semiconductor material different from that of the semiconductor element of the first electronic circuit. An interlayer insulating film covers the second member and an area of the first surface of the first member to which the second member is not joined. An inter-member connection wire on the interlayer insulating film couples the first and second electronic circuits through an opening in the interlayer insulating film. A shield structure including a first metal pattern disposed on the interlayer insulating film shields a shielded circuit, which is part of the first electronic circuit, in terms of radio frequencies.

    Semiconductor device and semiconductor module
    9.
    发明授权
    Semiconductor device and semiconductor module 有权

    公开(公告)号：US12183648B2

    公开(公告)日：2024-12-31

    申请号：US17554043

    申请日：2021-12-17

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Mikiko Fukasawa ,  Satoshi Goto ,  Shunji Yoshimi

    IPC: H03F3/14 ,  H01L23/367 ,  H01L23/66 ,  H03F3/195

    Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.

    Current control circuit and power amplifier circuit
    10.
    发明授权
    Current control circuit and power amplifier circuit 有权

    公开(公告)号：US11489493B2

    公开(公告)日：2022-11-01

    申请号：US16781058

    申请日：2020-02-04

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Mikiko Fukasawa ,  Kazuhiko Ishimoto

    IPC: H03F1/02 ,  H03F3/19 ,  H03F1/52 ,  H03F3/21

    Abstract: A current control circuit controls a base current of a first transistor included in a bias circuit outputting a bias current to a power amplifier based on a base-collector voltage of the first transistor. The current control circuit includes a first circuit that outputs a signal associated with the base-collector voltage of the first transistor, and a second circuit that, based on the signal, provides electrical continuity between a base of the first transistor and a reference potential.

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