Power amplifying circuit
    1.
    发明授权

    公开(公告)号:US12206374B2

    公开(公告)日:2025-01-21

    申请号:US17363627

    申请日:2021-06-30

    Abstract: A power amplifying circuit includes a single-ended amplifier, a differential amplifier, a first balun transformer, a second balun transformer, and a first switching circuit. The single-ended amplifier operates in a first mode and a second mode different from the first mode. The differential amplifier operates in the second mode. The first balun transformer converts an unbalanced output signal from the single-ended amplifier into a differential signal and outputs the differential signal to the differential amplifier. The second balun transformer converts a balanced output signal from the differential amplifier into an unbalanced output signal. The first switching circuit outputs the unbalanced output signal from the single-ended amplifier in the first mode and outputs the unbalanced output signal from the second balun transformer in the second mode.

    Semiconductor device and semiconductor module

    公开(公告)号:US12183648B2

    公开(公告)日:2024-12-31

    申请号:US17554043

    申请日:2021-12-17

    Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.

    Power amplifier circuit
    3.
    发明授权

    公开(公告)号:US11936350B2

    公开(公告)日:2024-03-19

    申请号:US17374065

    申请日:2021-07-13

    CPC classification number: H03F3/245 H03F1/0211 H03F2200/222 H03F2200/451

    Abstract: A power amplifier circuit includes a first transistor having a first terminal to which a first signal inputs, a second transistor having a first terminal to which the first signal inputs, a first resistor having a first end to which a first bias current is supplied and a second end electrically connected to the first terminal of the first transistor, a second resistor having a first end to which a second bias current is supplied and a second end electrically connected to the first terminal of the second transistor, and a third resistor having a first end connected to the first end of the first resistor and a second end connected to the first end of the second resistor.

    Radio-frequency module and communication device

    公开(公告)号:US11574898B2

    公开(公告)日:2023-02-07

    申请号:US17233542

    申请日:2021-04-19

    Abstract: A radio-frequency module including a module substrate having a first main surface and a second main surface on opposite sides; a low-noise amplifier disposed on the second main surface; and a power amplifier circuit in a Doherty configuration. The power amplifier including a first phase circuit; a second phase circuit; a carrier amplifier disposed on the first main surface and including an input terminal connected to a first end of the first phase circuit and an output terminal connected to a first end of the second phase circuit; and a peaking amplifier disposed on the first main surface and including an input terminal connected to a second end of the first phase circuit and an output terminal connected to a second end of the second phase circuit.

    Power amplifier circuit
    7.
    发明授权

    公开(公告)号:US11558014B2

    公开(公告)日:2023-01-17

    申请号:US17323505

    申请日:2021-05-18

    Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

    Power amplifier circuit
    8.
    发明授权

    公开(公告)号:US11043918B2

    公开(公告)日:2021-06-22

    申请号:US16589369

    申请日:2019-10-01

    Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

    Power amplification module
    9.
    发明授权

    公开(公告)号:US10224892B2

    公开(公告)日:2019-03-05

    申请号:US15482055

    申请日:2017-04-07

    Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.

    Semiconductor device and high-frequency module

    公开(公告)号:US11469187B2

    公开(公告)日:2022-10-11

    申请号:US16943243

    申请日:2020-07-30

    Abstract: At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.

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