公开(公告)号：US20160284394A1

公开(公告)日：2016-09-29

申请号：US15036666

申请日：2014-09-19

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Junji TOMINAGA

IPC: G11C11/56 ,  G11C11/16 ,  G11C13/04 ,  H01L43/02 ,  H01L43/10 ,  H01L45/00 ,  H01L43/08 ,  G06F3/06 ,  G11C13/00

CPC classification number: G11C11/5607 ,  G06F3/0625 ,  G06F3/0659 ,  G06F3/0688 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  G11C13/0004 ,  G11C13/04 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/144

Abstract: A spin electronic memory of the present invention includes: a pair of electrodes 1, 2, recording layers 6a, 6b, and 6c between the electrodes 1 and 2, the recording layer being formed by laminating first alloy layer 5 and second alloy layer 4, the first alloy layer 5 being formed to contain any one of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe, and Bi2Se3 as a principal component and to have a thickness of 2 nm to 10 nm, the second alloy layer 4 being formed to contain an alloy expressed by general formula (1) as a principal component; and spin injection layer 7 formed with a magnetic material to inject a spin into the recording layer with the magnetic material being magnetized, M1-xTex  (1) where M represents an atom selected from atoms of Ge, Al, and Si, and x represents a value of 0.5 or more and less than 1.

Abstract translation: [解决方案]本发明的旋转电子存储器的特征在于，通过层叠至少一对电极（1,2），主要由SbTe，Sb2Te3，BiTe，Bi2Te3等构成的第一合金层（5） BiSe或Bi2Se3，并且具有2nm至10nm的厚度（包括端值）和主要由通式（1）表示的合金构成的第二合金层（4）。 该旋转电子存储器的特征还在于包括布置在电极（1,2）之间的记录层（6a，6b，6c）和由待磁化的磁性材料形成的自旋注入层（7） 并将自旋极化电子注入记录层。 M1-xTex（1）在式（1）中，M表示Ge原子，Al原子或Si原子，x表示0.5以上且小于1的数。