公开(公告)号：US20240228282A1

公开(公告)日：2024-07-11

申请号：US18559376

申请日：2022-04-21

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kenji HIRATA ,  Hiroshi YAMADA ,  Masato UEHARA ,  Sri Ayu ANGGRAINI ,  Morito AKIYAMA

IPC: C01B21/06 ,  C23C14/06 ,  C23C14/34 ,  H10N30/00 ,  H10N30/079 ,  H10N30/853

CPC classification number: C01B21/0602 ,  C23C14/0641 ,  C23C14/34 ,  H10N30/079 ,  H10N30/10516 ,  H10N30/853 ,  C01P2006/40

Abstract: This ScAlN laminate includes a substrate, an intermediate layer formed on the substrate and a ScAlN thin film formed on the intermediate layer, and a nearest neighbor distance, which is a distance between atoms closest to each other in a lattice plane parallel to a surface of the intermediate layer, is shorter than the a-axis length of the ScAlN thin film.

公开(公告)号：US20230029023A1

公开(公告)日：2023-01-26

申请号：US17757932

申请日：2020-12-20

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Masato UEHARA ,  Marito AKIYAMA ,  Hiroshi YAMADA ,  Hiroshi FUNAKUBO ,  Takao SHIMIZU ,  Shinnosuke YASUOKA

IPC: G11C11/22 ,  H01L21/02 ,  H01L29/51 ,  H01L21/28

Abstract: It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same.
There are provided a ferroelectric thin film represented by a chemical formula M11-XM2XN, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.

公开(公告)号：US20220073348A1

公开(公告)日：2022-03-10

申请号：US17415691

申请日：2019-12-27

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kenji HIRATA ,  Hiroshi YAMADA ,  Masato UEHARA ,  Sri Ayu ANGGRAINI ,  Morito AKIYAMA

IPC: C01B21/06 ,  H01L41/18 ,  H01L41/09

Abstract: An object is to provide a piezoelectric body having a value indicating a higher performance index (d33, e33, C33, g33, and/or k2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al1-X-YMgXMYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.

公开(公告)号：US20250083957A1

公开(公告)日：2025-03-13

申请号：US18727123

申请日：2023-03-30

Applicant: TDK Corporation ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yukari INOUE ,  Tomohiro TERADA ,  Junichi KIMURA ,  Masato UEHARA ,  Kenji HIRATA ,  Hiroshi YAMADA ,  Morito AKIYAMA

IPC: C01B21/06 ,  H10N30/076 ,  H10N30/853

Abstract: A nitride contains zinc and a group 4 element. The group 4 element contained in the nitride is at least one kind of element selected from the group consisting of titanium and zirconium. A content of zinc in the nitride is expressed as [Zn] atomic %. A total content of the group 4 element in the nitride is expressed as [M] atomic %. In the nitride, [M]/([Zn]+[M]) is more than 20% and less than 50%.

公开(公告)号：US20240101423A1

公开(公告)日：2024-03-28

申请号：US18264362

申请日：2021-11-24

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Sri Ayu Anggraini ,  Morito AKIYAMA ,  Masato UEHARA ,  Hiroshi YAMADA ,  Kenji HIRATA

IPC: C01B21/06 ,  C23C14/06 ,  H10N30/00 ,  H10N30/50 ,  H10N30/853

CPC classification number: C01B21/0602 ,  C23C14/0641 ,  H10N30/10516 ,  H10N30/50 ,  H10N30/853 ,  C01P2002/52 ,  C01P2006/40 ,  C23C14/3464

Abstract: Provided is a scandium-doped aluminum nitride with nitrogen polarity. The nitride material is represented by the chemical formula ScXMYAl1-X-YN. M is at least one or more elements among C, Si, Ge, and Sn, X is greater than 0 and not greater than 0.4, Y is greater than 0 and not greater than 0.2, and X/Y is less than or equal to 5. The nitride material has piezoelectricity with a polarization direction of nitrogen polarity opposite to the direction of thin film growth.

公开(公告)号：US20220274886A1

公开(公告)日：2022-09-01

申请号：US17634224

申请日：2020-06-04

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Sri Ayu Anggraini ,  Morito AKIYAMA ,  Masato UEHARA ,  Hiroshi YAMADA ,  Kenji HIRATA

IPC: C04B35/581 ,  H01L41/08 ,  H01L41/09

Abstract: Provide are a nitride piezoelectric body having a value indicating a performance index (at least any one of d33, g33, and K2) higher than that of aluminum nitride not doped with any element, and a MEMS device using the same. The nitride piezoelectric body is a piezoelectric body represented by chemical formula Al1-X-YMgXTaYN, wherein X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1, and Ta includes tetravalent tantalum.