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公开(公告)号：US20220073348A1
公开(公告)日：2022-03-10
申请号：US17415691
申请日：2019-12-27
Inventor： Kenji HIRATA , Hiroshi YAMADA , Masato UEHARA , Sri Ayu ANGGRAINI , Morito AKIYAMA
Abstract: An object is to provide a piezoelectric body having a value indicating a higher performance index (d33, e33, C33, g33, and/or k2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al1-X-YMgXMYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.
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公开(公告)号：US20240228282A1
公开(公告)日：2024-07-11
申请号：US18559376
申请日：2022-04-21
Inventor： Kenji HIRATA , Hiroshi YAMADA , Masato UEHARA , Sri Ayu ANGGRAINI , Morito AKIYAMA
IPC: C01B21/06 , C23C14/06 , C23C14/34 , H10N30/00 , H10N30/079 , H10N30/853
CPC classification number: C01B21/0602 , C23C14/0641 , C23C14/34 , H10N30/079 , H10N30/10516 , H10N30/853 , C01P2006/40
Abstract: This ScAlN laminate includes a substrate, an intermediate layer formed on the substrate and a ScAlN thin film formed on the intermediate layer, and a nearest neighbor distance, which is a distance between atoms closest to each other in a lattice plane parallel to a surface of the intermediate layer, is shorter than the a-axis length of the ScAlN thin film.
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Patent Agency Ranking
公开(公告)号：US20160064645A1
公开(公告)日：2016-03-03
申请号：US14888278
申请日：2014-05-22
Inventor： Akihiko TESHIGAHARA , Kazuhiko KANO , Morito AKIYAMA , Keiko NISHIKUBO
CPC classification number: H01L41/18 , C23C14/0052 , C23C14/06 , C23C14/0641 , C23C14/18 , C23C14/185 , C23C14/34 , C23C14/3464 , C23C14/46 , H01L41/187 , H01L41/316
Abstract: A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided.
Abstract translation: 通过溅射形成压电薄膜，其基本上由氮化钪组成。 碳原子含量为2.5原子％以下。 当制造压电薄膜时，在至少存在氮气的气氛中，从碳原子含量为5at％以下的钪铝合金靶材同时在基板上溅射钪和铝。 也可以通过在合金靶材的相对表面上以倾斜角施加离子束来进行溅射。 此外，铝和钪也可以从Sc靶材料和Al靶材料在基板上同时溅射。 结果，可以提供表现出优异的压电性能的压电薄膜及其方法。
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4.发明申请公开(公告)号：US20250083957A1
公开(公告)日：2025-03-13
申请号：US18727123
申请日：2023-03-30
Inventor： Yukari INOUE , Tomohiro TERADA , Junichi KIMURA , Masato UEHARA , Kenji HIRATA , Hiroshi YAMADA , Morito AKIYAMA
IPC: C01B21/06 , H10N30/076 , H10N30/853
Abstract: A nitride contains zinc and a group 4 element. The group 4 element contained in the nitride is at least one kind of element selected from the group consisting of titanium and zirconium. A content of zinc in the nitride is expressed as [Zn] atomic %. A total content of the group 4 element in the nitride is expressed as [M] atomic %. In the nitride, [M]/([Zn]+[M]) is more than 20% and less than 50%.
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公开(公告)号：US20240101423A1
公开(公告)日：2024-03-28
申请号：US18264362
申请日：2021-11-24
Inventor： Sri Ayu Anggraini , Morito AKIYAMA , Masato UEHARA , Hiroshi YAMADA , Kenji HIRATA
IPC: C01B21/06 , C23C14/06 , H10N30/00 , H10N30/50 , H10N30/853
CPC classification number: C01B21/0602 , C23C14/0641 , H10N30/10516 , H10N30/50 , H10N30/853 , C01P2002/52 , C01P2006/40 , C23C14/3464
Abstract: Provided is a scandium-doped aluminum nitride with nitrogen polarity. The nitride material is represented by the chemical formula ScXMYAl1-X-YN. M is at least one or more elements among C, Si, Ge, and Sn, X is greater than 0 and not greater than 0.4, Y is greater than 0 and not greater than 0.2, and X/Y is less than or equal to 5. The nitride material has piezoelectricity with a polarization direction of nitrogen polarity opposite to the direction of thin film growth.
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公开(公告)号：US20220274886A1
公开(公告)日：2022-09-01
申请号：US17634224
申请日：2020-06-04
Inventor： Sri Ayu Anggraini , Morito AKIYAMA , Masato UEHARA , Hiroshi YAMADA , Kenji HIRATA
IPC: C04B35/581 , H01L41/08 , H01L41/09
Abstract: Provide are a nitride piezoelectric body having a value indicating a performance index (at least any one of d33, g33, and K2) higher than that of aluminum nitride not doped with any element, and a MEMS device using the same. The nitride piezoelectric body is a piezoelectric body represented by chemical formula Al1-X-YMgXTaYN, wherein X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1, and Ta includes tetravalent tantalum.
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7.发明申请公开(公告)号：US20150287905A1
公开(公告)日：2015-10-08
申请号：US14716974
申请日：2015-05-20
Applicant: Murata Manufacturing Co., Ltd. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Keiichi UMEDA , Atsushi HONDA , Atsushi TANAKA , Masashi OMURA , Morito AKIYAMA
IPC: H01L41/18 , C23C14/06 , C23C14/34 , H01L41/316
CPC classification number: H01L41/18 , C23C14/0617 , C23C14/0641 , C23C14/34 , C30B23/025 , C30B29/403 , H01L41/187 , H01L41/316 , H03H9/02015 , H03H9/02574
Abstract: A piezoelectric member that achieves a high sound speed includes a silicon-containing substrate and a piezoelectric layer. The piezoelectric layer is disposed on the silicon-containing substrate. At least a surface layer of the piezoelectric layer on a side opposite to the silicon-containing substrate is made of BxAl1-xN (0
Abstract translation: 实现高声速的压电元件包括含硅衬底和压电层。 压电层设置在含硅衬底上。 至少在与含硅衬底相反的一侧上的压电层的表面层由BxAl1-xN（0
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