公开(公告)号：US09914998B2

公开(公告)日：2018-03-13

申请号：US14853462

申请日：2015-09-14

Applicant: NDSU RESEARCH FOUNDATION

Inventor： Guruvenket Srinivasan ,  Robert A. Sailer ,  Justin Hoey

IPC: C23C16/24 ,  C23C16/448 ,  C23C16/34 ,  C23C18/02 ,  C23C18/12 ,  C09D183/16 ,  C23C16/02 ,  C23C16/56 ,  H01L21/02 ,  C08G77/60

CPC classification number: C23C16/4486 ,  C08G77/60 ,  C09D183/16 ,  C23C16/0209 ,  C23C16/24 ,  C23C16/345 ,  C23C16/56 ,  C23C18/02 ,  C23C18/1204 ,  C23C18/122 ,  C23C18/1258 ,  C23C18/127 ,  C23C18/1291 ,  H01L21/02118 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02592 ,  H01L21/0262

Abstract: An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.

公开(公告)号：US20160251227A1

公开(公告)日：2016-09-01

申请号：US15061512

申请日：2016-03-04

Applicant: NDSU RESEARCH FOUNDATION

Inventor： Guruvenket Srinivasan ,  Kenneth Anderson ,  Justin Hoey ,  Robert A. Sailer

IPC: C01B33/021 ,  C23C16/06 ,  C23C16/24 ,  C09K11/59 ,  C23C16/448

CPC classification number: C01B33/021 ,  C01B33/027 ,  C01B33/03 ,  C01P2004/51 ,  C01P2004/64 ,  C09K11/59 ,  C23C16/06 ,  C23C16/24 ,  C23C16/4486 ,  H01L21/02532 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02623 ,  H01L21/02628

Abstract: An apparatus and non-vapor-pressure dependent methods of producing silicon particles such as nanoparticles (Si-NPs), quantum dots (Si-QDs) and Si-nanocrystals (Si-NCs) as well as particle embedded thin films are disclosed. Nano or micro scale droplets of a liquid silane composition are polymerized in a gas phase with heat or radiation to produce particles that are then collected. Droplets from a droplet generator pass through a flow channel with a reaction zone that is heated or irradiated to form the particles that are collected in a collector. The flow of droplets may be assisted with carrier or flow gases that may be heated. Liquid silane composition solutions may also include metal, non-metal or metalloid dopants and solvents. Particle surfaces can also be passivated or functionalized. Particles and droplets of liquid silane can also be co-deposited and heated to produce particle embedded thin films.

Abstract translation: 公开了一种制造诸如纳米颗粒（Si-NP），量子点（Si-QDs）和Si-纳米晶体（Si-NC））以及颗粒嵌入薄膜之类的硅颗粒的装置和非蒸气压力依赖方法。 液体硅烷组合物的纳米级或微尺度液滴在气相中与热或辐射聚合以产生随后被收集的颗粒。 来自液滴发生器的液滴通过加热或照射反应区的流动通道，以形成收集在收集器中的颗粒。 液滴的流动可以用可能被加热的载体或流动气体来辅助。 液体硅烷组合物溶液还可以包括金属，非金属或准金属掺杂剂和溶剂。 颗粒表面也可以被钝化或功能化。 液体硅烷的颗粒和液滴也可以共沉积并加热以产生颗粒嵌入的薄膜。

公开(公告)号：US20140370203A1

公开(公告)日：2014-12-18

申请号：US14333124

申请日：2014-07-16

Applicant: NDSU RESEARCH FOUNDATION

Inventor： Robert A. Sailer ,  Justin M. Hoey ,  Iskander Akhatov ,  Orven Swenson ,  Artur Lutfurakhmanov ,  Michael Robinson

IPC: H05K3/14 ,  H05K3/10

CPC classification number: H05K3/146 ,  C23C24/04 ,  H05K3/102 ,  H05K3/14 ,  H05K2203/0502 ,  H05K2203/1344

Abstract: A system and method for depositing an aerosolized powder of solid particles on a substrate for printed circuit applications is disclosed and comprises cold spraying the aerosolized powder onto the substrate to form a finite feature, wherein at least one of the dimensions of length and width of the finite feature measures 500 microns or less.

Abstract translation: 公开了一种用于在用于印刷电路应用的基板上沉积固体颗粒的雾化粉末的系统和方法，其包括将雾化的粉末冷却喷涂到衬底上以形成有限的特征，其中至少一个尺寸的长度和宽度 有限特征尺寸为500微米或更小。

公开(公告)号：US20180244988A1

公开(公告)日：2018-08-30

申请号：US15898655

申请日：2018-02-18

Applicant: NDSU RESEARCH FOUNDATION

Inventor： Philip Boudjouk ,  Guruvenket Srinivasan ,  Kenneth Anderson ,  Justin Hoey ,  Robert A. Sailer

IPC: C09K11/59 ,  C09K11/02 ,  C01B33/021

CPC classification number: C09K11/59 ,  C01B33/021 ,  C09K11/02 ,  C09K11/025

Abstract: Methods for producing surface functionalized silicon nanoparticles like Si-QDs using a continuous gas-phase synthesis by direct pyrolysis of aerosolized higher order liquid silanes like cyclohexasilane (Si6H12) or cyclopentasilane (Si5H10) to produce nanoscale particles are provided. The methods permit control over the particle characteristics i.e., crystallinity, core-shell, size and surface chemistry of Si nanostructures and allow the tuning of the band gap (absorption) and manipulation of photo responsive properties. A wide variety of modifications can be performed using the hydrogen (H) or hydroxyl (OH) groups attached to silicon atoms on the particle surface. The coupling of different molecules or complexes directly to the silicon atoms of the particles allows the engineering of desirable optical, chemical or biological activity to the particles or can act as linkers to agglomerate particles or form porous films.

公开(公告)号：US20160068954A1

公开(公告)日：2016-03-10

申请号：US14853462

申请日：2015-09-14

Applicant: NDSU RESEARCH FOUNDATION

Inventor： Guruvenket Srinivasan ,  Robert A. Sailer ,  Justin Hoey

IPC: C23C16/448 ,  H01L21/02 ,  C23C16/24 ,  C23C16/56 ,  C23C16/02

CPC classification number: C23C16/4486 ,  C08G77/60 ,  C09D183/16 ,  C23C16/0209 ,  C23C16/24 ,  C23C16/345 ,  C23C16/56 ,  C23C18/02 ,  C23C18/1204 ,  C23C18/122 ,  C23C18/1258 ,  C23C18/127 ,  C23C18/1291 ,  H01L21/02118 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02592 ,  H01L21/0262

Abstract: An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.

Abstract translation: 提出了使用直接注入液体氢硅烷的Si基材料的化学气相沉积的装置和非蒸气压依赖方法。 液体硅烷前体溶液还可以包括金属，非金属或准金属掺杂剂，纳米材料和溶剂。 说明性装置具有前体溶液和载气系统，具有内部室的雾化器和沉积头以及支撑衬底的热板。 雾化液体硅烷前体溶液和载气移动通过可被加热的受限反应区，气溶胶和蒸气沉积在基底上以形成薄膜。 衬底可以在沉积之前被加热。 沉积的膜可以通过热或激光加工进一步加工。