公开(公告)号：US09711685B2

公开(公告)日：2017-07-18

申请号：US15095937

申请日：2016-04-11

Applicant: NICHIA CORPORATION

Inventor： Naoya Sako ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC: H01L33/32 ,  H01L33/22 ,  C30B25/18 ,  C30B29/20 ,  C30B29/40 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/308 ,  H01L21/02 ,  H01L33/24 ,  H01L33/00

CPC classification number: H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

公开(公告)号：US09337390B2

公开(公告)日：2016-05-10

申请号：US14593728

申请日：2015-01-09

Applicant: NICHIA CORPORATION

Inventor： Naoya Sako ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC: H01L33/32 ,  C30B25/18 ,  C30B29/20 ,  C30B29/40 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/308 ,  H01L21/02 ,  H01L33/24

CPC classification number: H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: A method for manufacturing a sapphire substrate in which a plurality of projections are formed on a C-plane of the sapphire substrate by etching, includes: forming a patterned etching mask on the C-plane of the sapphire substrate; etching the sapphire substrate until the projections are formed, wherein each of the projections formed by the etching has a substantially triangular pyramidal-shape and has a plurality of side surfaces, a pointed top and a bottom, wherein the bottom of each of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides. The projections are arranged on vertexes of a triangular lattice, and an orientation of the bottom of the projections conforms with an orientation that is rotated by about 30 degrees from an orientation of a triangle of the triangular lattice; and removing the etching mask from the sapphire substrate.

Abstract translation: 一种制造蓝宝石衬底的方法，其中通过蚀刻在蓝宝石衬底的C平面上形成多个突起，包括：在蓝宝石衬底的C面上形成图案化蚀刻掩模; 蚀刻蓝宝石衬底直到形成突起，其中通过蚀刻形成的每个突起具有大致三角锥形，并且具有多个侧表面，尖顶和底部，其中每个突起的底部具有 具有三个向外弯曲的弧形侧面的大致三角形形状。 突起被布置在三角形格子的顶点上，并且突起的底部的取向与从三角形格子的三角形的取向旋转约30度的取向一致; 并从蓝宝石衬底去除蚀刻掩模。

公开(公告)号：US20150115307A1

公开(公告)日：2015-04-30

申请号：US14593728

申请日：2015-01-09

Applicant: NICHIA CORPORATION

Inventor： Naoya SAKO ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC: H01L33/32 ,  H01L21/02 ,  H01L33/24

CPC classification number: H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: [Technical Problem]A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency.[Solution to Problem]A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.

Abstract translation: 技术问题提供一种蓝宝石基板及其制造方法，其能够使结晶度优异的氮化物半导体的生长成为可以实现具有优异的光提取效率的氮化物半导体发光元件。 [问题的解决方案]蓝宝石衬底，其在其上生长氮化物半导体的主表面上设置有多个突起，以形成氮化物半导体发光元件，其中所述突起基本上是金字塔形的，具有尖顶，并由 多个侧面，其中所述侧表面与所述突起的底面具有在53°和59°之间的倾斜角，并且其中所述侧表面是相对于所述侧表面抑制氮化物半导体生长的结晶生长抑制表面 位于相邻突起之间的基底表面。