公开(公告)号：US20130270593A1

公开(公告)日：2013-10-17

申请号：US13831211

申请日：2013-03-14

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC: H01L33/10

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract translation: 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 各个突起的底部的顶点在与蓝宝石基板的晶轴“a”顺时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US20130285109A1

公开(公告)日：2013-10-31

申请号：US13831138

申请日：2013-03-14

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC: H01L33/20

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Abstract translation: 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 相应突起的底部的顶点在与蓝宝石基板的晶轴“a”逆时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US20160300982A1

公开(公告)日：2016-10-13

申请号：US15095937

申请日：2016-04-11

Applicant: NICHIA CORPORATION

Inventor： Naoya SAKO ,  Takashi OHARA ,  Yoshiki INOUE ,  Yuki SHIBUTANI ,  Yoshihito KAWAUCHI ,  Kazuyuki TAKEICHI ,  Yasunori NAGAHAMA

IPC: H01L33/22 ,  H01L33/00 ,  C30B29/40 ,  C30B33/10 ,  C30B33/12 ,  C30B25/18 ,  H01L33/32 ,  C30B29/20

CPC classification number: H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

Abstract translation: 蓝宝石衬底，其在其上生长氮化物半导体的主表面上设置有多个突起，以形成氮化物半导体发光元件。 突起具有基本上三角锥形的突起，其具有多个侧表面和尖顶。 侧表面与凸起的底部之间具有53°和59°之间的倾斜角度。 侧表面是相对于位于相邻突起之间的主表面的一部分抑制氮化物半导体生长的晶体生长抑制表面。 突起的底部具有三个具有三个向外弯曲的弧形侧面的三角形形状，并且每个侧表面具有基本上三角形的形状，其顶点位于突出部的顶部并且在底部的相应侧的两端 的投影。

公开(公告)号：US20150270443A1

公开(公告)日：2015-09-24

申请号：US14734961

申请日：2015-06-09

Applicant: NICHIA CORPORATION

Inventor： Junya NARITA ,  Takuya OKADA ,  Yohei WAKAI ,  Yoshiki INOUE ,  Naoya SAKO ,  Katsuyoshi KADAN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/10 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Abstract translation: 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US20150115307A1

公开(公告)日：2015-04-30

申请号：US14593728

申请日：2015-01-09

Applicant: NICHIA CORPORATION

Inventor： Naoya SAKO ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC: H01L33/32 ,  H01L21/02 ,  H01L33/24

CPC classification number: H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: [Technical Problem]A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency.[Solution to Problem]A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.

Abstract translation: 技术问题提供一种蓝宝石基板及其制造方法，其能够使结晶度优异的氮化物半导体的生长成为可以实现具有优异的光提取效率的氮化物半导体发光元件。 [问题的解决方案]蓝宝石衬底，其在其上生长氮化物半导体的主表面上设置有多个突起，以形成氮化物半导体发光元件，其中所述突起基本上是金字塔形的，具有尖顶，并由 多个侧面，其中所述侧表面与所述突起的底面具有在53°和59°之间的倾斜角，并且其中所述侧表面是相对于所述侧表面抑制氮化物半导体生长的结晶生长抑制表面 位于相邻突起之间的基底表面。