公开(公告)号：US20160300982A1

公开(公告)日：2016-10-13

申请号：US15095937

申请日：2016-04-11

Applicant: NICHIA CORPORATION

Inventor： Naoya SAKO ,  Takashi OHARA ,  Yoshiki INOUE ,  Yuki SHIBUTANI ,  Yoshihito KAWAUCHI ,  Kazuyuki TAKEICHI ,  Yasunori NAGAHAMA

IPC: H01L33/22 ,  H01L33/00 ,  C30B29/40 ,  C30B33/10 ,  C30B33/12 ,  C30B25/18 ,  H01L33/32 ,  C30B29/20

CPC classification number: H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

Abstract translation: 蓝宝石衬底，其在其上生长氮化物半导体的主表面上设置有多个突起，以形成氮化物半导体发光元件。 突起具有基本上三角锥形的突起，其具有多个侧表面和尖顶。 侧表面与凸起的底部之间具有53°和59°之间的倾斜角度。 侧表面是相对于位于相邻突起之间的主表面的一部分抑制氮化物半导体生长的晶体生长抑制表面。 突起的底部具有三个具有三个向外弯曲的弧形侧面的三角形形状，并且每个侧表面具有基本上三角形的形状，其顶点位于突出部的顶部并且在底部的相应侧的两端 的投影。