公开(公告)号：US20160160345A1

公开(公告)日：2016-06-09

申请号：US14908855

申请日：2015-05-15

Applicant: NITTO DENKO CORPORATION

Inventor： Kodai MIYAMOTO ,  Kazuaki SASA ,  Hironobu MACHINAGA ,  Eri UEDA ,  Manami KUROSE ,  Tomotake NASHIKI

IPC: C23C14/58 ,  H01B3/42 ,  H01B1/02 ,  C23C14/08 ,  C23C14/35

CPC classification number: C23C14/58 ,  B32B7/02 ,  B32B9/00 ,  C23C14/08 ,  C23C14/086 ,  C23C14/35 ,  C23C14/5806 ,  H01B1/02 ,  H01B3/426 ,  H01B3/427 ,  H01L31/022466

Abstract: Provided is a transparent conductive film that can drastically improving an electrical characteristic of a transparent conductive layer after crystallizing process with resped to the transparent conductive layer before the crystallizing process and can achieve a lower resistivity.The transparent conductive film (1) is provided with a film substrate (2) and a crystalline transparent conductive layer (3) formed on one of the main surfaces (2a) of the said substrate. The amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10 to 60)×1019/cm3 and Hall mobility μa of 10 to 25 cm2/V·s, the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80 to 150)×1019/cm3 and Hall mobility t of 20 to 40 cm2/V·s, and the length of motion L defined by {(nc−na)2+(μc−μa)2}1/2 is 50 to 150.

Abstract translation: 提供一种透明导电膜，其可以在结晶处理之前，在透明导电层之后，在结晶处理之后，可以显着地改善透明导电层的电特性，并可以实现较低的电阻率。 透明导电膜（1）设置有形成在所述基板的一个主表面（2a）上的薄膜基板（2）和结晶透明导电层（3）。 结晶处理前的非晶透明导电层的（10〜60）×1019 / cm 3的载流子密度na×1019，10〜25cm2 / V·s的霍尔迁移率μa，结晶化后的结晶透明导电层具有 （80〜150）×1019 / cm 3的载流子密度nc×1019，20〜40cm2 / V·s的霍尔迁移率t和由{（nc-na）2+（μc-μa） ）2} 1/2为50〜150。

公开(公告)号：US20190310394A1

公开(公告)日：2019-10-10

申请号：US16309256

申请日：2017-06-16

Applicant: NITTO DENKO CORPORATION

Inventor： Kodai MIYAMOTO ,  Minoru KANATANI ,  Tomotake NASHIKI

IPC: G02B1/115 ,  B32B27/08 ,  B32B27/30 ,  B32B7/023 ,  C23C14/08 ,  C23C14/00 ,  C23C14/35 ,  G02B1/14 ,  G02B1/18

Abstract: The anti-reflection film includes an anti-reflection layer composed of multilayer thin-films having different refractive indexes on one principal surface of a transparent film substrate. The moisture permeability of the anti-reflection film is 15 to 1000 g/m2·24 h. The surface of the anti-reflection layer has an indentation elastic modulus of 20 to 100 GPa, and an arithmetic mean roughness Ra of 3 nm or less. The arithmetic mean roughness Ra of the surface of the anti-reflection layer is preferably 1.5 nm or less. The thin-films constituting the anti-reflection layer can be deposited by, for example, a sputtering method.