公开(公告)号：US20160160345A1

公开(公告)日：2016-06-09

申请号：US14908855

申请日：2015-05-15

Applicant: NITTO DENKO CORPORATION

Inventor： Kodai MIYAMOTO ,  Kazuaki SASA ,  Hironobu MACHINAGA ,  Eri UEDA ,  Manami KUROSE ,  Tomotake NASHIKI

IPC: C23C14/58 ,  H01B3/42 ,  H01B1/02 ,  C23C14/08 ,  C23C14/35

CPC classification number: C23C14/58 ,  B32B7/02 ,  B32B9/00 ,  C23C14/08 ,  C23C14/086 ,  C23C14/35 ,  C23C14/5806 ,  H01B1/02 ,  H01B3/426 ,  H01B3/427 ,  H01L31/022466

Abstract: Provided is a transparent conductive film that can drastically improving an electrical characteristic of a transparent conductive layer after crystallizing process with resped to the transparent conductive layer before the crystallizing process and can achieve a lower resistivity.The transparent conductive film (1) is provided with a film substrate (2) and a crystalline transparent conductive layer (3) formed on one of the main surfaces (2a) of the said substrate. The amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10 to 60)×1019/cm3 and Hall mobility μa of 10 to 25 cm2/V·s, the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80 to 150)×1019/cm3 and Hall mobility t of 20 to 40 cm2/V·s, and the length of motion L defined by {(nc−na)2+(μc−μa)2}1/2 is 50 to 150.

Abstract translation: 提供一种透明导电膜，其可以在结晶处理之前，在透明导电层之后，在结晶处理之后，可以显着地改善透明导电层的电特性，并可以实现较低的电阻率。 透明导电膜（1）设置有形成在所述基板的一个主表面（2a）上的薄膜基板（2）和结晶透明导电层（3）。 结晶处理前的非晶透明导电层的（10〜60）×1019 / cm 3的载流子密度na×1019，10〜25cm2 / V·s的霍尔迁移率μa，结晶化后的结晶透明导电层具有 （80〜150）×1019 / cm 3的载流子密度nc×1019，20〜40cm2 / V·s的霍尔迁移率t和由{（nc-na）2+（μc-μa） ）2} 1/2为50〜150。

公开(公告)号：US20220085274A1

公开(公告)日：2022-03-17

申请号：US17279054

申请日：2019-09-27

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Hironobu MACHINAGA ,  Taketo ISHIKAWA ,  Takahiko YANAGITANI ,  Takahiro SHIMIZU

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/316 ,  C04B35/453 ,  C04B35/622

Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

公开(公告)号：US20200381610A1

公开(公告)日：2020-12-03

申请号：US16497969

申请日：2018-03-08

Applicant: NITTO DENKO CORPORATION

Inventor： Masaharu ARIMOTO ,  Hironobu MACHINAGA ,  Masato KATSUDA ,  Manami KUROSE

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/113 ,  H01L41/187 ,  H01L41/316 ,  H01L41/319

Abstract: A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

公开(公告)号：US20250008841A1

公开(公告)日：2025-01-02

申请号：US18695936

申请日：2022-09-27

Applicant: NITTO DENKO CORPORATION

Inventor： Manami KUROSE ,  Yosuke NAKANISHI ,  Hirokazu TANAKA ,  Hironobu MACHINAGA

IPC: H10N15/20

Abstract: A thermoelectric conversion element includes a magneto-thermoelectric conversion body and a wiring. The magneto-thermoelectric conversion body linearly extends. The wiring is electrically connected to the magneto-thermoelectric conversion body. In the thermoelectric conversion element, an absolute value |ΔS| of a difference between a Seebeck coefficient Sm in the length direction of the magneto-thermoelectric conversion body and a Seebeck coefficient Sc in the length direction of the wiring is 10 μV/K or less.

公开(公告)号：US20220181542A1

公开(公告)日：2022-06-09

申请号：US17439806

申请日：2020-03-10

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

公开(公告)号：US20220037580A1

公开(公告)日：2022-02-03

申请号：US17279692

申请日：2019-09-20

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Hironobu MACHINAGA

IPC: H01L41/083 ,  H01L41/08 ,  H01L41/187 ,  H01L41/277 ,  H01L41/316 ,  H01L41/319

Abstract: For a piezoelectric device, an optical characteristic and/or a piezoelectric characteristic is improved. A piezoelectric device has a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, wherein the piezoelectric layer is formed of a wurtzite crystal material as a main component, to which one or more elements is/are added, said one or more elements being transparent when turned into an oxide, and wherein a haze value is 3% or less, and transmittance with respect to light having a wavelength of 380 nm is 50% or more.

公开(公告)号：US20210399202A1

公开(公告)日：2021-12-23

申请号：US17279538

申请日：2019-09-26

Applicant: Nitto Denko Corporation

Inventor： Naoki NAGAOKA ,  Daisuke NAKAMURA ,  Manami KUROSE

IPC: H01L41/047 ,  H01L41/113 ,  H01L41/187 ,  H01L41/29

Abstract: A piezoelectric device that exhibits good piezoelectric characteristics, while reducing generation of leakage current paths, and a method of manufacturing the same, are provided. The piezoelectric device has a multilayer stack in which a first electrode, a piezoelectric layer, and a second electrode are stacked in this order on a substrate, wherein at least the first electrode is formed of an amorphous oxide conductor.

公开(公告)号：US20190275759A1

公开(公告)日：2019-09-12

申请号：US16344754

申请日：2017-10-24

Applicant: NITTO DENKO CORPORATION

Inventor： Hajime NISHIO ,  Hironobu MACHINAGA ,  Xiaolei CHEN ,  Toshihiro TSURUSAWA ,  Manami KUROSE

IPC: B32B3/14 ,  B32B9/04 ,  B32B15/08 ,  C23C14/08 ,  C23C28/00

Abstract: A metallic lustrous member with electromagnetic wave transmissibility, which is capable of being easily produced even when using not only chromium (Cr) or indium (In) but also any of some other metals such as aluminum (Al), as a material for a metal layer thereof. A metallic lustrous member with electromagnetic wave transmissibility, which is capable of using silver (Ag), zinc (Zn), lead (Pb) or copper (Cu), or an alloy thereof, as a material for a metal layer thereof, in addition to aluminum (Al). The metallic lustrous member with electromagnetic wave transmissibility, comprises an indium oxide-containing layer provided along a surface of a substrate, and a metal layer laminated on the indium oxide-containing layer, wherein the metal layer includes, in at least part thereof, a plurality of portions which are in a discontinuous state.