公开(公告)号：US20160160345A1

公开(公告)日：2016-06-09

申请号：US14908855

申请日：2015-05-15

Applicant: NITTO DENKO CORPORATION

Inventor： Kodai MIYAMOTO ,  Kazuaki SASA ,  Hironobu MACHINAGA ,  Eri UEDA ,  Manami KUROSE ,  Tomotake NASHIKI

IPC: C23C14/58 ,  H01B3/42 ,  H01B1/02 ,  C23C14/08 ,  C23C14/35

CPC classification number: C23C14/58 ,  B32B7/02 ,  B32B9/00 ,  C23C14/08 ,  C23C14/086 ,  C23C14/35 ,  C23C14/5806 ,  H01B1/02 ,  H01B3/426 ,  H01B3/427 ,  H01L31/022466

Abstract: Provided is a transparent conductive film that can drastically improving an electrical characteristic of a transparent conductive layer after crystallizing process with resped to the transparent conductive layer before the crystallizing process and can achieve a lower resistivity.The transparent conductive film (1) is provided with a film substrate (2) and a crystalline transparent conductive layer (3) formed on one of the main surfaces (2a) of the said substrate. The amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10 to 60)×1019/cm3 and Hall mobility μa of 10 to 25 cm2/V·s, the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80 to 150)×1019/cm3 and Hall mobility t of 20 to 40 cm2/V·s, and the length of motion L defined by {(nc−na)2+(μc−μa)2}1/2 is 50 to 150.

Abstract translation: 提供一种透明导电膜，其可以在结晶处理之前，在透明导电层之后，在结晶处理之后，可以显着地改善透明导电层的电特性，并可以实现较低的电阻率。 透明导电膜（1）设置有形成在所述基板的一个主表面（2a）上的薄膜基板（2）和结晶透明导电层（3）。 结晶处理前的非晶透明导电层的（10〜60）×1019 / cm 3的载流子密度na×1019，10〜25cm2 / V·s的霍尔迁移率μa，结晶化后的结晶透明导电层具有 （80〜150）×1019 / cm 3的载流子密度nc×1019，20〜40cm2 / V·s的霍尔迁移率t和由{（nc-na）2+（μc-μa） ）2} 1/2为50〜150。

公开(公告)号：US20230408244A1

公开(公告)日：2023-12-21

申请号：US18251270

申请日：2021-10-28

Applicant: NITTO DENKO CORPORATION

Inventor： Toshimasa NISHIMORI ,  Kazuhiro NAKAJIMA ,  Tomotake NASHIKI ,  Eiji NIWA

IPC: G01B7/16 ,  C23C14/06 ,  C23C14/34 ,  C23C14/58

CPC classification number: G01B7/18 ,  C23C14/5873 ,  C23C14/34 ,  C23C14/0641

Abstract: A laminated film includes an insulating substrate resin film and a resistance layer in order in a thickness direction. The resistance layer includes chromium nitride. A temperature coefficient of resistance of the resistance layer is −400 ppm/° C. or more and −200 ppm/° C. or less.

公开(公告)号：US20230125216A1

公开(公告)日：2023-04-27

申请号：US17911762

申请日：2021-03-01

Applicant: NITTO DENKO CORPORATION

Inventor： Ryotaro YOKOI ,  Takahiro NAKAI ,  Tomotake NASHIKI

IPC: C23C28/00

Abstract: The present invention relates to an electromagnetic wave transmissive metallic luster member including: a substrate; an indium oxide-containing layer provided on the substrate in a continuous state; and a metal layer formed on the indium oxide-containing layer, in which the metal layer includes, in at least a part thereof, a plurality of portions which are in a discontinuous state each other, and a sheet resistance of a laminate of the metal layer and the indium oxide-containing layer is 2.50 E + 8 Ω/□ or more.

公开(公告)号：US20190310394A1

公开(公告)日：2019-10-10

申请号：US16309256

申请日：2017-06-16

Applicant: NITTO DENKO CORPORATION

Inventor： Kodai MIYAMOTO ,  Minoru KANATANI ,  Tomotake NASHIKI

IPC: G02B1/115 ,  B32B27/08 ,  B32B27/30 ,  B32B7/023 ,  C23C14/08 ,  C23C14/00 ,  C23C14/35 ,  G02B1/14 ,  G02B1/18

Abstract: The anti-reflection film includes an anti-reflection layer composed of multilayer thin-films having different refractive indexes on one principal surface of a transparent film substrate. The moisture permeability of the anti-reflection film is 15 to 1000 g/m2·24 h. The surface of the anti-reflection layer has an indentation elastic modulus of 20 to 100 GPa, and an arithmetic mean roughness Ra of 3 nm or less. The arithmetic mean roughness Ra of the surface of the anti-reflection layer is preferably 1.5 nm or less. The thin-films constituting the anti-reflection layer can be deposited by, for example, a sputtering method.

公开(公告)号：US20160237550A1

公开(公告)日：2016-08-18

申请号：US15026202

申请日：2014-10-10

Applicant: NITTO DENKO CORPORATION

Inventor： Tomotake NASHIKI ,  Akira HAMADA

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  C23C14/3464 ,  C23C14/562

Abstract: A maintenance method for a sputtering device includes the steps of: moving a cathode carriage to take a plurality of targets and a plurality of cathodes out of a vacuum chamber; operating a plurality of cathode rotating apparatuses to rotate the targets and the cathodes so as to cause the targets to face upwards; operating a plurality of cathode sliding apparatuses to move the targets and the cathodes located in places at high height to places at low height; removing the targets from the cathodes to attach a plurality of new targets to the cathodes; returning the targets and the cathodes to an original height thereof; returning the targets and the cathodes to original rotation angles; and putting the targets and the cathodes back into the vacuum chamber.

Abstract translation: 溅射装置的维护方法包括以下步骤：移动阴极托架以将多个靶和多个阴极从真空室中取出; 操作多个阴极旋转装置以使目标和阴极旋转，以使目标朝上; 操作多个阴极滑动装置将位于高高度的位置的靶和阴极移动到低高度的位置; 从阴极去除目标以将多个新目标附着到阴极; 将目标和阴极返回到其原始高度; 将目标和阴极返回到原始旋转角度; 并将目标和阴极放回真空室。

公开(公告)号：US20160145740A1

公开(公告)日：2016-05-26

申请号：US15009387

申请日：2016-01-28

Applicant: NITTO DENKO CORPORATION

Inventor： Tomotake NASHIKI ,  Yoshimasa SAKATA ,  Hideo SUGAWARA ,  Kenkichi YAGURA ,  Akira HAMADA ,  Yoshihisa ITO ,  Kuniaki ISHIBASHI

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/56

CPC classification number: C23C16/44 ,  C23C14/021 ,  C23C14/562 ,  C23C16/06 ,  C23C16/56 ,  Y10T428/31678

Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the fed substrate; forming a first material film on the first surface of the degassed substrate in a first film formation chamber; forming a second material film on the first material film in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the material films formed thereon; unrolling and feeding the taken up substrate from the first roll chamber in the direction, using a second surface opposite the first surface of the substrate as a surface for film formation; and repeating all the above treatments.

公开(公告)号：US20180173076A1

公开(公告)日：2018-06-21

申请号：US15576029

申请日：2016-05-18

Applicant: NITTO DENKO CORPORATION

Inventor： Masayoshi KATAGIRI ,  Nozomi FUJINO ,  Tomotake NASHIKI

IPC: G02F1/19

CPC classification number: G02F1/19 ,  C23C14/0036 ,  C23C14/082 ,  C23C14/205 ,  C23C14/34 ,  C23C14/562 ,  G02B5/26

Abstract: A light modulation film (1) includes a light modulation layer (30) whose state is reversibly changed between a transparent state by hydrogenation and a reflective state by dehydrogenation, and a catalyst layer (40) that promotes hydrogenation and dehydrogenation in the light modulation layer, in this order on a polymer film substrate (10). In a thickness-direction distribution of an element concentration as measured by X-ray electron spectroscopy, the light modulation layer (30) includes a light modulation region (32) with an oxygen content of 50 atom % or more and having a thickness of 10 nm or more on a catalyst layer (40)-side, and an oxidized region (31) with an oxygen content of less than 50 atom % on a polymer film substrate (10)-side.

公开(公告)号：US20180164611A1

公开(公告)日：2018-06-14

申请号：US15576053

申请日：2016-05-18

Applicant: NITTO DENKO CORPORATION

Inventor： Nozomi FUJINO ,  Masayoshi KATAGIRI ,  Tomotake NASHIKI

IPC: G02F1/00 ,  G02F1/15

CPC classification number: G02F1/0018 ,  C23C14/10 ,  C23C14/205 ,  G02F1/15 ,  G02F1/15165 ,  G02F1/19

Abstract: The light modulation film (1) is a hydrogen-activation-type light modulation film that includes an inorganic oxide layer (20), a light modulation layer (30) and a catalyst layer (40), in this order on a polymer film substrate (10). The light modulation layer (30) is a layer for reversibly changing states between a transparent state due to hydrogenation and a reflective state due to dehydrogenation. The catalyst layer (40) promotes hydrogenation and dehydrogenation in the light modulation layer. The inorganic oxide layer (20) contains an oxide of an element different from a metal element that constitutes the light modulation layer (30).