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公开(公告)号:US20220085274A1
公开(公告)日:2022-03-17
申请号:US17279054
申请日:2019-09-27
Applicant: Nitto Denko Corporation
Inventor: Daisuke NAKAMURA , Naoki NAGAOKA , Manami KUROSE , Hironobu MACHINAGA , Taketo ISHIKAWA , Takahiko YANAGITANI , Takahiro SHIMIZU
IPC: H01L41/187 , H01L41/08 , H01L41/316 , C04B35/453 , C04B35/622
Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.
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公开(公告)号:US20190263996A1
公开(公告)日:2019-08-29
申请号:US16320366
申请日:2017-04-06
Applicant: NITTO DENKO CORPORATION
Inventor: Masayoshi NAKAMURA , Masayuki HODONO , Takahiko ITO , Naoki NAGAOKA , Tomoaki HISHIKI
Abstract: Provided is a low-dielectric porous polymer film having a low dielectric constant at high millimeter-wave frequencies and thereby useful as a sheet for a millimeter-wave antenna. The low-dielectric porous polymer film is made of a polymer material and formed with fine pores dispersed therein, wherein the film has a porosity of 60% or more, and the pores have an average pore diameter of 10 μm or less.
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公开(公告)号:US20220181542A1
公开(公告)日:2022-06-09
申请号:US17439806
申请日:2020-03-10
Applicant: Nitto Denko Corporation
Inventor: Daisuke NAKAMURA , Naoki NAGAOKA , Manami KUROSE , Taketo ISHIKAWA , Hironobu MACHINAGA
IPC: H01L41/08 , H01L41/047 , H01L41/187 , H01L41/29 , H01L41/316 , H01L41/319
Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).
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公开(公告)号:US20200032026A1
公开(公告)日:2020-01-30
申请号:US16500882
申请日:2018-04-06
Applicant: NITTO DENKO CORPORATION
Inventor: Masayoshi NAKAMURA , Masayuki HODONO , Takahiko ITO , Naoki NAGAOKA , Tomoaki HISHIKI
Abstract: Provided is a porous low-dielectric polymer film which has a low dielectric constant at high millimeter-wave frequencies to fulfill utility as a sheet for a millimeter-wave antenna, and provides excellent circuit board processability. The porous low-dielectric polymer film is made of a polymer material and formed with fine pores dispersed therein, wherein the film has a porosity of 60% or more, and the pores have an average pore diameter of 50 μm or less, and wherein a porous structure of the film is a closed-cell structure.
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公开(公告)号:US20220037580A1
公开(公告)日:2022-02-03
申请号:US17279692
申请日:2019-09-20
Applicant: Nitto Denko Corporation
Inventor: Daisuke NAKAMURA , Naoki NAGAOKA , Manami KUROSE , Hironobu MACHINAGA
IPC: H01L41/083 , H01L41/08 , H01L41/187 , H01L41/277 , H01L41/316 , H01L41/319
Abstract: For a piezoelectric device, an optical characteristic and/or a piezoelectric characteristic is improved. A piezoelectric device has a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, wherein the piezoelectric layer is formed of a wurtzite crystal material as a main component, to which one or more elements is/are added, said one or more elements being transparent when turned into an oxide, and wherein a haze value is 3% or less, and transmittance with respect to light having a wavelength of 380 nm is 50% or more.
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公开(公告)号:US20210399202A1
公开(公告)日:2021-12-23
申请号:US17279538
申请日:2019-09-26
Applicant: Nitto Denko Corporation
Inventor: Naoki NAGAOKA , Daisuke NAKAMURA , Manami KUROSE
IPC: H01L41/047 , H01L41/113 , H01L41/187 , H01L41/29
Abstract: A piezoelectric device that exhibits good piezoelectric characteristics, while reducing generation of leakage current paths, and a method of manufacturing the same, are provided. The piezoelectric device has a multilayer stack in which a first electrode, a piezoelectric layer, and a second electrode are stacked in this order on a substrate, wherein at least the first electrode is formed of an amorphous oxide conductor.
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公开(公告)号:US20230140996A1
公开(公告)日:2023-05-11
申请号:US17915317
申请日:2021-02-25
Applicant: NITTO DENKO CORPORATION
Inventor: Koji SAKAMOTO , Takahiko ITO , Naoki NAGAOKA , Shu SASAKI , Daiki KATO
CPC classification number: B32B5/18 , B32B27/08 , B32B27/32 , B32B25/08 , B32B27/34 , B32B2266/025 , B32B2266/0257 , B32B2250/04 , B32B2250/24 , B32B2250/22 , B32B2307/206 , B32B2305/026 , B32B2266/104 , B32B2457/00
Abstract: A resin sheet includes a porous structure. The porous structure is configured to adjust transmission of a millimeter wave. The porous structure has a relative permittivity varying in stages in a thickness direction of the resin sheet from a plane on which the millimeter wave is incident, the relative permittivity varying such that a difference between average relative permittivities in two adjacent layer portions is a predetermined value or less, the layer portions each having a particular thickness smaller than a wavelength of the millimeter wave. The porous structure has, as pores, only pores each having a pore diameter equal to or less than 10% of the wavelength of the millimeter wave.
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公开(公告)号:US20210343927A1
公开(公告)日:2021-11-04
申请号:US17279943
申请日:2019-09-20
Applicant: Nitto Denko Corporation
Inventor: Naoki NAGAOKA , Daisuke NAKAMURA
IPC: H01L41/083 , H01L41/08 , H01L41/313 , H01L41/27
Abstract: A piezoelectric device has a good piezoelectric characteristic, while suppressing a leakage current between electrodes. The piezoelectric device has a first substrate, a first conductive film provided on the first substrate, a piezoelectric layer formed of an inorganic material and provided on the first conductive film, an adhesive layer provided on the piezoelectric layer, and a second conductive film provided on the adhesive layer.
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公开(公告)号:US20250110265A1
公开(公告)日:2025-04-03
申请号:US18730130
申请日:2023-01-13
Applicant: Nitto Denko Corporation
Inventor: Naoki NAGAOKA , Daiki KATO , Shimpei YAKUWA , Shunji IMAMURA
IPC: G02B5/08
Abstract: Provided is a reflector having reflection characteristics of a broad frequency band. The reflector includes: a dielectric layer; a conductive layer that is provided on a first surface of the dielectric layer and includes a periodical arrangement of a plurality of conductor patterns; and a ground layer that is provided on a second surface opposite to the first surface. The conductive layer is configured to reflect incident waves at an angle having a size different from that of an incident angle of the incident waves. The dielectric layer has a relative dielectric constant of 2.0 or less.
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公开(公告)号:US20220158071A1
公开(公告)日:2022-05-19
申请号:US17439504
申请日:2020-03-10
Applicant: Nitto Denko Corporation
Inventor: Daisuke NAKAMURA , Naoki NAGAOKA , Taketo ISHIKAWA , Hironobu MACHINAGA
IPC: H01L41/047 , H01L41/08 , H01L41/187 , H01L41/29
Abstract: A piezo electric device having a configuration that can suppress the formation of a leakage path between electrodes that sandwich a piezoelectric layer and also reduce deterioration in the piezoelectric characteristics, is provided. The piezoelectric device has a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a substrate. The first electrode and the second electrode are arranged so as not to overlap each other in the stacking direction.
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