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公开(公告)号：US10663607B2
公开(公告)日：2020-05-26
申请号：US15591165
申请日：2017-05-10
发明人： Lan Zhang , Yingshuai Du , Bo Li , Zonggui Wu , Jun Li , Xuepeng Cao , Haifan Hu , Jianping Gu , Guangming Xu , Bicheng Liu
IPC分类号： G01T1/36
摘要： The present disclosure provides an apparatus for processing signals for a plurality of energy regions, and a system and method for detecting radiation of a plurality of energy regions. The apparatus for processing signals for a plurality of energy regions may comprise: a first processor, configured to receive a signal from a detector and process the received signal to generate a gated signal, wherein a turn-on period of the gated signal represents magnitude of the received signal; and a second processor, configured to receive the gated signal from the first processor, and determine one of the plurality of energy regions to which the received signal belongs according to the turn-on period of the gated signal, so as to count signals within the determined energy region.
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公开(公告)号：US10411051B2
公开(公告)日：2019-09-10
申请号：US15580848
申请日：2016-08-31
发明人： Lan Zhang , Yuanjing Li , Yinong Liu , Haifan Hu , Jun Li
IPC分类号： H01L27/144 , H01L27/146 , H01L31/0224 , H01L31/0352 , H01L31/18
摘要： A coplanar electrode photodiode array and a manufacturing method thereof are disclosed. On a top side of a low resistance rate substrate, a high resistance epitaxial silicon wafer, a first conductive type heavily doped region and a second conductive type doped region are formed, which are a cathode and an anode of a photodiode respectively. The structure includes a trench structure formed between the anode and the cathode, the trench structure may be form by a gap, an insulating material, a conductive structure, a reflective material, and ion implantation, and also includes a first conductive type heavily doped region, an insulating isolation layer or a conductive structure with an insulating layer, and the like formed under the anode and the cathode.
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公开(公告)号：US20180059262A1
公开(公告)日：2018-03-01
申请号：US15609476
申请日：2017-05-31
发明人： Lan ZHANG , Yingshuai Du , Bo Li , Zonggui Wu , Jun Li , Xuepeng Cao , Haifan Hu , Jianping Gu , Guangming Xu , Bicheng Liu
IPC分类号： G01T1/24 , H01L31/0224 , H01L31/032
CPC分类号： G01T1/24 , G01T1/241 , H01L31/022408 , H01L31/0324
摘要： A semiconductor may include a semiconductor detection material including a first side and a second side opposite to each other, a cathode disposed on the first side, and an anode disposed on the second side. The anode includes an array of pixel anodes defining detection pixels of the semiconductor detector, and intermediate anodes disposed between adjacent ones of the pixel anodes. According to an embodiment of the present disclosure, it is possible to achieve signal correction to improve the energy resolution and the signal-to-noise ratio of the detector.
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公开(公告)号：US11189741B2
公开(公告)日：2021-11-30
申请号：US16343983
申请日：2017-09-12
发明人： Lan Zhang , Haifan Hu , Xuepeng Cao , Jun Li
IPC分类号： H01L31/0352 , H01L27/146 , H01L31/02 , H01L31/18 , H01L31/028 , H01L31/0224
摘要： According to an embodiment, a method of fabricating a photodiode device may include: growing an epitaxial layer on a first surface of a substrate, wherein the epitaxial layer is first type lightly doped; forming, in the substrate, a first type heavily doped region in contact with the first type lightly doped epitaxial layer; thinning the substrate from a second surface of the substrate opposite to the first surface to expose the first type heavily doped region; patterning the first type heavily doped region from the second surface side of the substrate to form a trench therein, that penetrates through the first type heavily doped region and extends into the epitaxial layer, to serve as a first electrode region of the photodiode device; and forming a second type heavily doped region at bottom of the trench, to serve as a second electrode region of the photodiode device.
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公开(公告)号：US11011656B2
公开(公告)日：2021-05-18
申请号：US16467623
申请日：2017-08-08
发明人： Lan Zhang , Haifan Hu , Xuepeng Cao , Jun Li
IPC分类号： H01L31/0352 , H01L27/146 , H01L31/0224 , H01L31/0232 , H01L31/103
摘要： A photodiode device and a photodiode detector are provided. According to an embodiment, the photodiode device may include a first type lightly doped semiconductor base including a first surface and a second surfaces opposite to each other, a first electrode region being first type heavily doped and disposed on the first surface of the semiconductor base, a second electrode region being second type heavily doped and disposed on the second surface of the semiconductor base, wherein the first surface is a light incident surface.
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公开(公告)号：US10101473B2
公开(公告)日：2018-10-16
申请号：US15606071
申请日：2017-05-26
发明人： Lan Zhang , Yingshuai Du , Bo Li , Zonggui Wu , Jun Li , Xuepeng Cao , Haifan Hu , Jianping Gu , Guangming Xu , Bicheng Liu
IPC分类号： G01T1/24 , H01L31/02 , H05K1/18 , H05K1/02 , H05K1/11 , H01L31/119 , H01L31/0296
摘要： The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.
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公开(公告)号：US10775302B2
公开(公告)日：2020-09-15
申请号：US16232318
申请日：2018-12-26
发明人： Ziran Zhao , Haifan Hu , Xuming Ma , Yingxin Wang
IPC分类号： G01N21/35 , G01J1/44 , G01N21/3581 , G01J1/42 , G01J1/04
摘要： The present disclosure provides a terahertz detector. The terahertz detector includes a planar array structure that is constituted by a plurality of pixel units, the plurality of pixel units each include N sub pixels and each of the sub pixels includes no more than one signal trigger configured to transform a terahertz signal to an electrical current pulsing signal, and each of the plurality of pixel units detects a signal that is a sum of the electrical current pulsing signals of the N sub pixels, where N is an integer greater than 1.
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公开(公告)号：US10670743B2
公开(公告)日：2020-06-02
申请号：US15606394
申请日：2017-05-26
发明人： Lan Zhang , Yingshuai Du , Bo Li , Zonggui Wu , Jun Li , Xuepeng Cao , Haifan Hu , Jianping Gu , Guangming Xu , Bicheng Liu
摘要： A semiconductor detector and a packaging method thereof. The semiconductor detector includes: a cathode circuit board including a read out chip, a high voltage side top layer of the cathode circuit board, a bottom connection layer of the cathode circuit board and a dielectric filled between the high voltage side top layer and the bottom connection layer, wherein the high voltage side top layer is connected to the bottom connection layer through a via hole; and a detector crystal including a crystal body, an anode and a cathode, the anode is connected to the read out chip of the cathode circuit board, the high voltage side top layer is connected to an input terminal of the semiconductor detector and the bottom connection layer directly contacts the cathode of the detector crystal to connect the cathode to the cathode circuit board.
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公开(公告)号：US10388818B2
公开(公告)日：2019-08-20
申请号：US15625473
申请日：2017-06-16
发明人： Lan Zhang , Yingshuai Du , Bo Li , Zonggui Wu , Jun Li , Xuepeng Cao , Haifan Hu , Jianping Gu , Guangming Xu , Bicheng Liu
IPC分类号： H01L31/118 , G01T1/24 , G01T1/02 , H01L27/144 , H01L31/0224 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/032
摘要： There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.
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公开(公告)号：US20190234870A1
公开(公告)日：2019-08-01
申请号：US16232318
申请日：2018-12-26
发明人： Ziran ZHAO , Haifan Hu , Xuming Ma , Yingxin Wang
IPC分类号： G01N21/3581 , G01J1/44
CPC分类号： G01N21/3581 , G01J1/0411 , G01J1/42 , G01J1/44 , G01J2001/4466 , G01J2001/448
摘要： The present disclosure provides a terahertz detector. The terahertz detector includes a planar array structure that is constituted by a plurality of pixel units, the plurality of pixel units each include N sub pixels and each of the sub pixels includes no more than one signal trigger configured to transform a terahertz signal to an electrical current pulsing signal, and each of the plurality of pixel units detects a signal that is a sum of the electrical current pulsing signals of the N sub pixels, where N is an integer greater than 1.
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