公开(公告)号：US09231589B2

公开(公告)日：2016-01-05

申请号：US14103559

申请日：2013-12-11

Applicant: NXP B.V.

Inventor： Hok-tung Wong ,  Yang Zhao ,  Brad Gunter ,  Alma Anderson ,  James Caravella

IPC: H03K5/12 ,  H03K19/00 ,  H03K19/017 ,  H03K19/0185

CPC classification number: H03K19/00 ,  H03K19/01714 ,  H03K19/018507 ,  H03K19/018585

Abstract: A reference output device includes a low side selector configured to select a first voltage level as an output signal. The output signal is a reference voltage. The reference output device also includes a high side selector configured to select a second voltage level as the output signal. The reference output device also includes a slew rate control configured to switch the output signal between the first voltage level and the second voltage level at a constant slew rate.

Abstract translation: 参考输出装置包括被配置为选择第一电压电平作为输出信号的低侧选择器。 输出信号是参考电压。 参考输出装置还包括配置为选择第二电压电平作为输出信号的高侧选择器。 参考输出装置还包括转换速率控制，配置为以恒定的转换速率在第一电压电平和第二电压电平之间切换输出信号。

公开(公告)号：US09025288B2

公开(公告)日：2015-05-05

申请号：US13835554

申请日：2013-03-15

Applicant: NXP B.V.

Inventor： Madan Vemula ,  James Caravella ,  James Spehar ,  Gerrit Willem den Besten

IPC: H02H9/00 ,  H02H9/04

CPC classification number: H02H9/041 ,  H02H9/046 ,  H03K17/693 ,  H03K2017/066 ,  H03K2217/0018

Abstract: Cross-talk is mitigated in a switching circuit. In accordance with one or more embodiments, an apparatus includes a multi-pin connector having signal-carrying electrodes that communicate with a device external to the apparatus, and respective field-effect switches that couple the signal-carrying electrodes to respective communication channels in the apparatus. The switches include a first field-effect semiconductor switch having a gate electrode adjacent a channel region that connects electrodes (e.g., source and drain regions) when a threshold switching voltage is applied to the gate, in which the electrodes are connected between one of the signal-carrying electrodes and a first channel coupled to an electrostatic discharge (ESD) circuit. A bias circuit mitigates cross-talk between the communication channels by biasing the channel region of the first field-effect semiconductor switch (in an off state) to boost the threshold switching voltage over a threshold discharge voltage of the ESD circuit.

Abstract translation: 串扰在开关电路中得到缓解。 根据一个或多个实施例，一种装置包括具有与设备外部的装置通信的信号承载电极的多针连接器以及将信号承载电极耦合到相应通信信道的相应的场效应开关 仪器。 开关包括第一场效应半导体开关，其具有栅极电极，邻近沟道区域，当阈值开关电压施加到栅极时，该栅极电极连接电极（例如，源极区域和漏极区域），其中电极连接在 信号承载电极和耦合到静电放电（ESD）电路的第一通道。 偏置电路通过偏置第一场效应半导体开关的通道区域（处于断开状态）来缓解通信通道之间的串扰，以提高阈值切换电压超过ESD电路的阈值放电电压。

公开(公告)号：US20140268445A1

公开(公告)日：2014-09-18

申请号：US13835554

申请日：2013-03-15

Applicant: NXP B.V.

Inventor： Madan Vemula ,  James Caravella ,  James Spehar ,  Gerrit Willem den Besten

IPC: H02H9/04

CPC classification number: H02H9/041 ,  H02H9/046 ,  H03K17/693 ,  H03K2017/066 ,  H03K2217/0018

Abstract: Cross-talk is mitigated in a switching circuit. In accordance with one or more embodiments, an apparatus includes a multi-pin connector having signal-carrying electrodes that communicate with a device external to the apparatus, and respective field-effect switches that couple the signal-carrying electrodes to respective communication channels in the apparatus. The switches include a first field-effect semiconductor switch having a gate electrode adjacent a channel region that connects electrodes (e.g., source and drain regions) when a threshold switching voltage is applied to the gate, in which the electrodes are connected between one of the signal-carrying electrodes and a first channel coupled to an electrostatic discharge (ESD) circuit. A bias circuit mitigates cross-talk between the communication channels by biasing the channel region of the first field-effect semiconductor switch (in an off state) to boost the threshold switching voltage over a threshold discharge voltage of the ESD circuit.

Abstract translation: 串扰在开关电路中得到缓解。 根据一个或多个实施例，一种装置包括具有与设备外部的装置通信的信号承载电极的多针连接器以及将信号承载电极耦合到相应通信信道的相应的场效应开关 仪器。 开关包括第一场效应半导体开关，其具有栅极电极，邻近沟道区域，当阈值开关电压施加到栅极时，该栅极电极连接电极（例如，源极区域和漏极区域），其中电极连接在 信号承载电极和耦合到静电放电（ESD）电路的第一通道。 偏置电路通过偏置第一场效应半导体开关的通道区域（处于断开状态）来缓解通信通道之间的串扰，以提高阈值切换电压超过ESD电路的阈值放电电压。

公开(公告)号：US09198255B2

公开(公告)日：2015-11-24

申请号：US13827578

申请日：2013-03-14

Applicant: NXP B.V.

Inventor： Abu Kamal ,  James Caravella

IPC: H05B37/00 ,  H05B33/08

CPC classification number: H05B33/0887 ,  H05B33/0818 ,  H05B33/0884 ,  Y02B20/347

Abstract: Various aspects of the present disclosure include a controlled current path having a load that draws current from the controlled current path. In response to a modulating voltage signal, current is controlled through the load which causes a transistor circuit, including a transistor, to switch between two current modes. Switching will subject the transistor to voltage stresses due to current in the controlled current path spiking towards a breakdown threshold of the transistor. In response to a first aspect of the modulating voltage signal and in one of the current modes, the current in the controlled current path is directed through the first current branch. In response to a second aspect of the modulating voltage signal and in the other current mode, the current in the controlled current path is diverted from the first current branch to a second current branch.

Abstract translation: 本公开的各个方面包括具有从受控电流路径吸取电流的负载的受控电流路径。 响应于调制电压信号，通过负载来控制电流，使得包括晶体管的晶体管电路在两个电流模式之间切换。 开关将使晶体管受到电压的影响，这是由于受到控制的电流通路中的电流引起晶体管的击穿阈值。 响应于调制电压信号的第一方面，并​​且在当前模式之一中，受控电流路径中的电流被引导通过第一电流分支。 响应于调制电压信号的第二方面，并且在另一电流模式中，受控电流路径中的电流从第一电流分支转移到第二电流分支。

公开(公告)号：US20140347111A1

公开(公告)日：2014-11-27

申请号：US14103559

申请日：2013-12-11

Applicant: NXP B.V.

Inventor： Hok-tung Wong ,  Yang Zhao ,  Brad Gunter ,  Alma Anderson ,  James Caravella

IPC: H03K5/01

CPC classification number: H03K19/00 ,  H03K19/01714 ,  H03K19/018507 ,  H03K19/018585

Abstract: A reference output device includes a low side selector configured to select a first voltage level as an output signal. The output signal is a reference voltage. The reference output device also includes a high side selector configured to select a second voltage level as the output signal. The reference output device also includes a slew rate control configured to switch the output signal between the first voltage level and the second voltage level at a constant slew rate.

Abstract translation: 参考输出装置包括被配置为选择第一电压电平作为输出信号的低侧选择器。 输出信号是参考电压。 参考输出装置还包括配置为选择第二电压电平作为输出信号的高侧选择器。 参考输出装置还包括转换速率控制，配置为以恒定的转换速率在第一电压电平和第二电压电平之间切换输出信号。

公开(公告)号：US20140265887A1

公开(公告)日：2014-09-18

申请号：US13827578

申请日：2013-03-14

Applicant: NXP B.V.

Inventor： Abu Kamal ,  James Caravella

IPC: H05B33/08

CPC classification number: H05B33/0887 ,  H05B33/0818 ,  H05B33/0884 ,  Y02B20/347

Abstract: Various aspects of the present disclosure include a controlled current path having a load that draws current from the controlled current path. In response to a modulating voltage signal, current is controlled through the load which causes a transistor circuit, including a transistor, to switch between two current modes. Switching will subject the transistor to voltage stresses due to current in the controlled current path spiking towards a breakdown threshold of the transistor. In response to a first aspect of the modulating voltage signal and in one of the current modes, the current in the controlled current path is directed through the first current branch. In response to a second aspect of the modulating voltage signal and in the other current mode, the current in the controlled current path is diverted from the first current branch to a second current branch.

Abstract translation: 本公开的各个方面包括具有从受控电流路径吸取电流的负载的受控电流路径。 响应于调制电压信号，通过负载来控制电流，使得包括晶体管的晶体管电路在两个电流模式之间切换。 开关将使晶体管受到电压的影响，这是由于受到控制的电流通路中的电流引起晶体管的击穿阈值。 响应于调制电压信号的第一方面，并​​且在当前模式之一中，受控电流路径中的电流被引导通过第一电流分支。 响应于调制电压信号的第二方面，并且在另一电流模式中，受控电流路径中的电流从第一电流分支转移到第二电流分支。