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公开(公告)号：US20150311024A1
公开(公告)日：2015-10-29
申请号：US14261246
申请日：2014-04-24
Applicant: NXP B.V.
Inventor： Klaus Reimann , Olaf Wunnicke , Michael in 't Zandt
CPC classification number: H01J9/025 , H01J1/304 , H01J1/308 , H01J9/24 , H01J19/24 , H01J19/54 , H01J21/04 , H01L27/0248
Abstract: Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.
Abstract translation: 用于形成用于静电放电装置的场致发射二极管的方法的实施例包括形成第一电极，牺牲层和第二电极。 牺牲层分离第一和第二电极。 该方法还包括通过去除牺牲层在第一和第二电极之间形成空腔。 腔分离第一和第二电极。 该方法还包括在形成第一和第二电极之后，通过至少一个进入孔，在第一和第二电极中的至少一个上沉积电子发射材料。 进入孔远离第一和第二电极上的电子发射位置。
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公开(公告)号：US09236734B2
公开(公告)日：2016-01-12
申请号：US14301445
申请日：2014-06-11
Applicant: NXP B.V.
Inventor： Michael in 't Zandt , Klaus Reimann , Olaf Wunnicke
CPC classification number: H02H9/06 , H01J9/025 , H01J9/18 , H01L23/60 , H01L27/0288 , H01L2924/0002 , H01L2924/00
Abstract: The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.
Abstract translation: 本发明提供一种形成诸如横向场发射ESD保护结构的电场间隙器件的方法，其中在电介质层之间形成阴极层。 形成阳极通道并且衬有牺牲介电层。 在阳极通道中形成导电阳极柱，然后在阳极柱附近刻蚀牺牲介电层。 蚀刻离开阴极层的悬浮部分，其限定与相邻阳极柱的横向间隙。 该部分具有由阴极层的角部限定的尖端面，并且可以精确地限定横向间隙，因为其对应于牺牲介电层的厚度。
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公开(公告)号：US09190237B1
公开(公告)日：2015-11-17
申请号：US14261246
申请日：2014-04-24
Applicant: NXP B.V.
Inventor： Klaus Reimann , Olaf Wunnicke , Michael in 't Zandt
CPC classification number: H01J9/025 , H01J1/304 , H01J1/308 , H01J9/24 , H01J19/24 , H01J19/54 , H01J21/04 , H01L27/0248
Abstract: Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.
Abstract translation: 用于形成用于静电放电装置的场致发射二极管的方法的实施例包括形成第一电极，牺牲层和第二电极。 牺牲层分离第一和第二电极。 该方法还包括通过去除牺牲层在第一和第二电极之间形成空腔。 腔分离第一和第二电极。 该方法还包括在形成第一和第二电极之后，通过至少一个进入孔，在第一和第二电极中的至少一个上沉积电子发射材料。 进入孔远离第一和第二电极上的电子发射位置。
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