公开(公告)号：US20100105217A1

公开(公告)日：2010-04-29

申请号：US12529482

申请日：2008-03-18

申请人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Fleur Guittard

发明人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Fleur Guittard

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.

摘要翻译： 在位于两个基板之一的给定深度的脆化区处分离两个基板的方法。 该方法包括在炉中实现的分离退火步骤，其中退火包括第一阶段，在该阶段期间温度沿升级变化，允许达到高温并在该高温下进行退火以使其稳定，在第二阶段期间 温度沿着降级而变化，其末端打开炉子以从炉中卸载基板。 调节第二相以便在炉子打开时使温度不均匀性最小化，例如在基板的分离表面处的裂纹缺陷。

公开(公告)号：US08088671B2

公开(公告)日：2012-01-03

申请号：US12529482

申请日：2008-03-18

申请人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Fleur Guittard

发明人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Fleur Guittard

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.

摘要翻译： 在位于两个基板之一的给定深度的脆化区处分离两个基板的方法。 该方法包括在炉中实现的分离退火步骤，其中退火包括第一阶段，在该阶段期间温度沿升级变化，允许达到高温并在该高温下进行退火以使其稳定，在第二阶段期间 温度沿着降级而变化，其末端打开炉子以从炉中卸载基板。 调节第二相以便在炉子打开时使温度不均匀性最小化，例如在基板的分离表面处的裂纹缺陷。

公开(公告)号：US07749862B2

公开(公告)日：2010-07-06

申请号：US11624867

申请日：2007-01-19

申请人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Christophe Maleville ,  Corinne Maunand Tussot

发明人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Christophe Maleville ,  Corinne Maunand Tussot

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/76251

摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.

摘要翻译： 描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。 该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面 以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域 无力，并从供体晶片上分离有用层。

公开(公告)号：US20050028727A1

公开(公告)日：2005-02-10

申请号：US10766207

申请日：2004-01-29

申请人： Walter Schwarzenbach ,  Christophe Maleville ,  Nadia Ben Mohamed

发明人： Walter Schwarzenbach ,  Christophe Maleville ,  Nadia Ben Mohamed

IPC分类号： H01L21/762 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/76254

摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.

摘要翻译： 一种从晶片上分离层的方法。 在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。 在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。

公开(公告)号：US07465645B2

公开(公告)日：2008-12-16

申请号：US10766207

申请日：2004-01-29

申请人： Walter Schwarzenbach ,  Christophe Maleville ,  Nadia Ben Mohamed

发明人： Walter Schwarzenbach ,  Christophe Maleville ,  Nadia Ben Mohamed

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254

摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.

摘要翻译： 一种从晶片上分离层的方法。 在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。 在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。

公开(公告)号：US08349703B2

公开(公告)日：2013-01-08

申请号：US12525493

申请日：2007-11-23

申请人： Sébastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat ,  Nadia Ben Mohamed

发明人： Sébastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat ,  Nadia Ben Mohamed

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  H01L21/02052

摘要： The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.

摘要翻译： 本发明涉及一种形成结构的方法，该结构包括从施主衬底转移到第二衬底上的半导体材料的薄层，其中两种不同的原子种类在一定条件下共注入到施主衬底中，以便产生弱化区 限定待传输的薄层。 植入两种不同的原子物质，使得它们的峰在施主衬底中具有小于200的偏移，并且在粗糙化至少一个结合表面之后将衬底粘合在一起。

公开(公告)号：US20100093152A1

公开(公告)日：2010-04-15

申请号：US12525493

申请日：2007-11-23

申请人： Sébastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat ,  Nadia Ben Mohamed

发明人： Sébastien Kerdiles ,  Willy Michel ,  Walter Schwarzenbach ,  Daniel Delprat ,  Nadia Ben Mohamed

IPC分类号： H01L21/30

CPC分类号： H01L21/2007 ,  H01L21/02052

摘要： The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.

摘要翻译： 本发明涉及一种形成结构的方法，该结构包括从施主衬底转移到第二衬底上的半导体材料的薄层，其中两种不同的原子种类在一定条件下共注入到施主衬底中，以便产生弱化区 限定待传输的薄层。 植入两种不同的原子物质，使得它们的峰在施主衬底中具有小于200的偏移，并且在粗糙化至少一个结合表面之后将衬底粘合在一起。

公开(公告)号：US20070117229A1

公开(公告)日：2007-05-24

申请号：US11624867

申请日：2007-01-19

申请人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Christophe Maleville ,  Corinne Maunand Tussot

发明人： Walter Schwarzenbach ,  Nadia Ben Mohamed ,  Christophe Maleville ,  Corinne Maunand Tussot

IPC分类号： H01L21/66

CPC分类号： H01L21/76254 ,  H01L21/76251

摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.

摘要翻译： 描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。 该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面 以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域 无力，并从供体晶片上分离有用层。

公开(公告)号：US08435897B2

公开(公告)日：2013-05-07

申请号：US12658655

申请日：2010-02-12

申请人： Aziz Alami-Idrissi ,  Sebastien Kerdiles ,  Walter Schwarzenbach

发明人： Aziz Alami-Idrissi ,  Sebastien Kerdiles ,  Walter Schwarzenbach

IPC分类号： H01L29/72

CPC分类号： H01L21/304 ,  H01L21/02032 ,  H01L21/76254

摘要： A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the surface of the substrate and the subsequent polishing, the reclaiming can be carried out such that the material consuming double-sided polishing step used in the prior art is no longer necessary.

摘要翻译： 一种用于回收衬底表面的方法，其中表面，特别是硅表面包括突出的残留形貌，至少包括第一材料层。 通过在衬底表面的非突出区域中提供填充材料和随后的抛光，可以进行回收，使得不再需要现有技术中使用的消耗双面抛光步骤的材料。

公开(公告)号：US20110140244A1

公开(公告)日：2011-06-16

申请号：US12965135

申请日：2010-12-10

申请人： Walter Schwarzenbach ,  Aziz Alami-Idrissi ,  Alexandre Chibko ,  Sébastien Kerdiles

发明人： Walter Schwarzenbach ,  Aziz Alami-Idrissi ,  Alexandre Chibko ,  Sébastien Kerdiles

IPC分类号： H01L29/06 ,  H01L21/311

CPC分类号： H01L21/02032 ,  H01L21/76254

摘要： The invention relates to a method for routing a chamfered substrate, having applications in the field of electronics, optics, or optoelectronics, which involves depositing a layer of a protective material on a peripheral annular zone of the substrate preferably with the aid of a plasma, partially etching the protective material with the aid of a plasma, so as to preserve a protective ring of the deposited material on the front face of the substrate, this ring located at a distance from the edge of the substrate, so as to delimit an accessible peripheral annular zone, etching a thickness of the material constituting the substrate to be routed, preferably with the aid of a plasma that is level with the accessible peripheral annular zone of the substrate, and removing the ring of protective material preferably with the aid of a plasma.

摘要翻译： 本发明涉及一种用于布线倒角衬底的方法，其具有在电子学，光学或光电子学领域中的应用，其包括优选借助于等离子体在衬底的外围环形区域上沉积保护材料层， 借助于等离子体部分地蚀刻保护材料，以便在衬底的前表面上保留沉积材料的保护环，该环位于离衬底边缘一定距离处，以限定可接近的 蚀刻构成要路由的衬底的材料的厚度，优选借助于与衬底的可接近的外围环形区域平齐的等离子体，并且优选地借助于衬底的方法去除保护材料环 等离子体。