公开(公告)号：US07259069B2

公开(公告)日：2007-08-21

申请号：US11229202

申请日：2005-09-15

申请人： Nak-Jin Son ,  Ji-Young Kim

发明人： Nak-Jin Son ,  Ji-Young Kim

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/331

CPC分类号： H01L29/66651 ,  H01L27/10873 ,  H01L29/1041 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/66537 ,  H01L29/66553 ,  H01L29/78

摘要： A semiconductor device and a method of manufacturing the same is disclosed. A trench is formed in an active region of a semiconductor substrate. A doped layer is formed on the inner walls of the trench. The trench is filled up with a first semiconductor layer. A gate insulating layer is formed on the first semiconductor layer and the substrate. Two gate electrodes are formed on the gate insulating layer such that the trench is located in between two gate electrodes. First and second impurity regions are formed in the substrate on both sides of each of the gate electrodes. Since the doped layer is locally formed in the trench area, the source and drain regions are completely separated from the heavily doped layer to weaken the electric field of PN junction, thereby improving refresh and preventing punchthrough between the source and drain.

公开(公告)号：US20060008994A1

公开(公告)日：2006-01-12

申请号：US11229202

申请日：2005-09-15

申请人： Nak-Jin Son ,  Ji-Young Kim

发明人： Nak-Jin Son ,  Ji-Young Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/66651 ,  H01L27/10873 ,  H01L29/1041 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/66537 ,  H01L29/66553 ,  H01L29/78

摘要： A semiconductor device and a method of manufacturing the same is disclosed. A trench is formed in an active region of a semiconductor substrate. A doped layer is formed on the inner walls of the trench. The trench is filled up with a first semiconductor layer. A gate insulating layer is formed on the first semiconductor layer and the substrate. Two gate electrodes are formed on the gate insulating layer such that the trench is located in between two gate electrodes. First and second impurity regions are formed in the substrate on both sides of each of the gate electrodes. Since the doped layer is locally formed in the trench area, the source and drain regions are completely separated from the heavily doped layer to weaken the electric field of PN junction, thereby improving refresh and preventing punchthrough between the source and drain.

摘要翻译： 公开了一种半导体器件及其制造方法。 在半导体衬底的有源区中形成沟槽。 掺杂层形成在沟槽的内壁上。 沟槽填充有第一半导体层。 在第一半导体层和基板上形成栅极绝缘层。 在栅极绝缘层上形成两个栅电极，使得沟槽位于两个栅电极之间。 在每个栅电极的两侧的基板中形成第一和第二杂质区。 由于掺杂层局部地形成在沟槽区域中，源极和漏极区域与重掺杂层完全分离，以削弱PN结的电场，从而改善了源极和漏极之间的刷新并防止穿透。

公开(公告)号：US07268043B2

公开(公告)日：2007-09-11

申请号：US11565127

申请日：2006-11-30

申请人： Nak-Jin Son ,  Ji-Young Kim

发明人： Nak-Jin Son ,  Ji-Young Kim

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/331

CPC分类号： H01L29/66651 ,  H01L27/10873 ,  H01L29/1041 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/66537 ,  H01L29/66553 ,  H01L29/78

摘要： A semiconductor device and a method of manufacturing the same is disclosed. A trench is formed in an active region of a semiconductor substrate. A doped layer is formed on the inner walls of the trench. The trench is filled up with a first semiconductor layer. A gate insulating layer is formed on the first semiconductor layer and the substrate. Two gate electrodes are formed on the gate insulating layer such that the trench is located in between two gate electrodes. First and second impurity regions are formed in the substrate on both sides of each of the gate electrodes. Since the doped layer is locally formed in the trench area, the source and drain regions are completely separated from the heavily doped layer to weaken the electric field of PN junction, thereby improving refresh and preventing punchthrough between the source and drain.

摘要翻译： 公开了一种半导体器件及其制造方法。 在半导体衬底的有源区中形成沟槽。 掺杂层形成在沟槽的内壁上。 沟槽填充有第一半导体层。 在第一半导体层和基板上形成栅极绝缘层。 在栅极绝缘层上形成两个栅电极，使得沟槽位于两个栅电极之间。 在每个栅电极的两侧的基板中形成第一和第二杂质区。 由于掺杂层局部地形成在沟槽区域中，源极和漏极区域与重掺杂层完全分离，以削弱PN结的电场，从而改善了源极和漏极之间的刷新并防止穿透。

公开(公告)号：US07009255B2

公开(公告)日：2006-03-07

申请号：US10445109

申请日：2003-05-23

申请人： Nak-Jin Son ,  Ji-Young Kim

发明人： Nak-Jin Son ,  Ji-Young Kim

IPC分类号： H01L29/78

CPC分类号： H01L29/66651 ,  H01L27/10873 ,  H01L29/1041 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/66537 ,  H01L29/66553 ,  H01L29/78

摘要： A semiconductor device and a method of manufacturing the same is disclosed. A trench is formed in an active region of a semiconductor substrate. A doped layer is formed on the inner walls of the trench. The trench is filled up with a first semiconductor layer. A gate insulating layer is formed on the first semiconductor layer and the substrate. Two gate electrodes are formed on the gate insulating layer such that the trench is located in between two gate electrodes. First and second impurity regions are formed in the substrate on both sides of each of the gate electrodes. Since the doped layer is locally formed in the trench area, the source and drain regions are completely separated from the heavily doped layer to weaken the electric field of PN junction, thereby improving refresh and preventing punchthrough between the source and drain.

摘要翻译： 公开了一种半导体器件及其制造方法。 在半导体衬底的有源区中形成沟槽。 掺杂层形成在沟槽的内壁上。 沟槽填充有第一半导体层。 在第一半导体层和基板上形成栅极绝缘层。 在栅极绝缘层上形成两个栅电极，使得沟槽位于两个栅电极之间。 在每个栅电极的两侧的基板中形成第一和第二杂质区。 由于掺杂层局部地形成在沟槽区域中，源极和漏极区域与重掺杂层完全分离，以削弱PN结的电场，从而改善了源极和漏极之间的刷新并防止穿透。

公开(公告)号：US10296114B2

公开(公告)日：2019-05-21

申请号：US12788669

申请日：2010-05-27

申请人： Moon-Jae Lee ,  Won-Jun Song ,  Sun-Hee Lee ,  Young-Hee Lee ,  Mu-Hyun Kim ,  Hye-Dong Kim ,  Ji-Young Kim

发明人： Moon-Jae Lee ,  Won-Jun Song ,  Sun-Hee Lee ,  Young-Hee Lee ,  Mu-Hyun Kim ,  Hye-Dong Kim ,  Ji-Young Kim

IPC分类号： G06F3/041 ,  G06F3/042 ,  H01L27/12

摘要： A touch screen display apparatus including a sensor unit to sense and to process light signals and a pixel unit to drive pixels according to the light signal processing performed by the sensor unit. The touch screen display apparatus includes a substrate; a plurality of pixel units disposed on the substrate, wherein each of the pixel units includes a first electrode, a second electrode, and an emission layer interposed between the first electrode and the second electrode; and a plurality of sensor units disposed on the substrate, wherein each of the sensor units includes a sensor first electrode, a sensor second electrode, and an organic light receiving layer interposed between the sensor first electrode and the sensor second electrode.

公开(公告)号：US09330960B2

公开(公告)日：2016-05-03

申请号：US14296850

申请日：2014-06-05

申请人： Young-Seung Cho ,  Sung-Eui Kim ,  Ji-Young Kim ,  Hoon Jeong ,  Chan-Won Kim ,  Jong-Bom Seo ,  Seung-Jun Lee ,  Jun-Soo Lee

发明人： Young-Seung Cho ,  Sung-Eui Kim ,  Ji-Young Kim ,  Hoon Jeong ,  Chan-Won Kim ,  Jong-Bom Seo ,  Seung-Jun Lee ,  Jun-Soo Lee

IPC分类号： H01L21/00 ,  H01L21/764 ,  H01L49/02 ,  H01L27/108

CPC分类号： H01L28/88 ,  H01L21/764 ,  H01L27/10808 ,  H01L27/10811 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/90

摘要： A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.

摘要翻译： 半导体器件包括第一电容器结构，第二电容器结构和绝缘图案。 第一电容器结构包括顺序堆叠在基板上的第一下电极，第一电介质层和第一上电极。 第二电容器结构包括第二下电极，第二电介质层和顺序堆叠在基板上并与第一电容器结构相邻的第二上电极。 绝缘图案部分地填充第一和第二电容器结构之间的空间，并且在绝缘图案上的第一和第二电容器结构之间形成气隙。

公开(公告)号：US09035330B2

公开(公告)日：2015-05-19

申请号：US13088261

申请日：2011-04-15

申请人： Jin-Goo Kang ,  Mu-Hyun Kim ,  Jae-Bok Kim ,  Dong-Kyu Lee ,  Ji-Young Kim

发明人： Jin-Goo Kang ,  Mu-Hyun Kim ,  Jae-Bok Kim ,  Dong-Kyu Lee ,  Ji-Young Kim

IPC分类号： H01L33/00 ,  H01L29/04 ,  H01L31/036 ,  H01L27/32 ,  H01L51/52

CPC分类号： H01L27/3246 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253

摘要： An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括：基板，基板上的多个像素，多个第一电极，每个设置在多个像素中的每一个中;像素限定层，包括限定子层的第一像素， 每个两个相邻的第一电极，以及限定子层的第二像素，覆盖限定每个两个相邻的第一电极的子层和表面边缘部分的第一像素，设置在每个第一电极上并包括发射层的中间层，以及 配置成面对第一电极的第二电极。

公开(公告)号：US08952900B2

公开(公告)日：2015-02-10

申请号：US12852702

申请日：2010-08-09

申请人： Moon-Jae Lee ,  Won-Jun Song ,  Sun-Hee Lee ,  Young-Hee Lee ,  Mu-Hyun Kim ,  Hye Dong Kim ,  Ji-Young Kim

发明人： Moon-Jae Lee ,  Won-Jun Song ,  Sun-Hee Lee ,  Young-Hee Lee ,  Mu-Hyun Kim ,  Hye Dong Kim ,  Ji-Young Kim

IPC分类号： G06F3/041

CPC分类号： G06F3/0412 ,  Y10T29/49124

摘要： A touch screen display apparatus for easily sensing the touch of a user. The touch screen display apparatus includes: a substrate; a display unit formed on the substrate; and a touch panel disposed to face the display unit, where the touch panel comprises a sealing substrate, a first electrode formed on the sealing substrate, a second electrode spaced apart from the first electrode, and a light receiving unit comprising an organic material interposed between the first electrode and the second electrode.

摘要翻译： 一种触摸屏显示装置，用于容易地感测用户的触摸。 触摸屏显示装置包括：基板; 形成在所述基板上的显示单元; 以及设置为面对显示单元的触摸面板，其中触摸面板包括密封基板，形成在密封基板上的第一电极，与第一电极间隔开的第二电极，以及光接收单元，其包括介于 第一电极和第二电极。

公开(公告)号：US08860670B2

公开(公告)日：2014-10-14

申请号：US12650159

申请日：2009-12-30

申请人： Ji-Young Kim ,  Seong-Hoon Kang ,  Hye-Soo Lee ,  Sun-Haeng Jo

发明人： Ji-Young Kim ,  Seong-Hoon Kang ,  Hye-Soo Lee ,  Sun-Haeng Jo

IPC分类号： G06F3/041 ,  G06F3/0485 ,  G06F3/0488

CPC分类号： G06F3/0488 ,  G06F3/0485

摘要： An apparatus is provided for performing a scroll function in a portable terminal, in which a touch screen displays a list divided into a plurality of sections, a memory stores a scroll function established for each of the plurality of sections, and a controller locates a focus on a particular item by performing a scroll function established for a particular section, when the section among the plurality of sections is touched and dragged.

摘要翻译： 提供一种用于在便携式终端中执行滚动功能的装置，其中触摸屏显示被划分为多个部分的列表，存储器存储为多个部分中的每一个建立的滚动功能，并且控制器定位焦点 通过执行为特定部分建立的滚动功能，当多个部分中的部分被触摸和拖动时，在特定项目上。

公开(公告)号：US08772853B2

公开(公告)日：2014-07-08

申请号：US13180601

申请日：2011-07-12

申请人： Augustin J. Hong ,  Ji-Young Kim ,  Kang-Lung Wang

发明人： Augustin J. Hong ,  Ji-Young Kim ,  Kang-Lung Wang

IPC分类号： H01L29/778

CPC分类号： B82Y10/00 ,  G11C16/04 ,  G11C2213/35 ,  H01L27/11529 ,  H01L27/11551 ,  H01L29/1606 ,  H01L29/42324 ,  H01L29/7881

摘要： A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers.

摘要翻译： 公开了一种石墨烯闪存（GFM）装置。 通常，GFM器件包括多个存储器单元，其中每个存储器单元包括石墨烯通道，石墨烯存储层和石墨烯电极。 在一个实施例中，通过使用石墨烯通道，石墨烯存储层和石墨烯电极，能够使GFM器件的存储器单元比常规闪存器件的存储器单元小得多。 更具体地说，在一个实施例中，GFM器件具有小于25纳米，小于或等于20纳米，小于或等于15纳米，小于或等于10纳米，或小于或等于5纳米 纳米。