公开(公告)号：US20120028455A1

公开(公告)日：2012-02-02

申请号：US13067788

申请日：2011-06-27

申请人： Naomi FUKUMAKI ,  Eiji HASEGAWA ,  Toshihiro IIZUKA ,  Ichiro YAMAMOTO

发明人： Naomi FUKUMAKI ,  Eiji HASEGAWA ,  Toshihiro IIZUKA ,  Ichiro YAMAMOTO

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823842

摘要： A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained.

摘要翻译： 制造具有p型场效应晶体管和n型场效应晶体管的半导体器件的方法包括以下步骤：按照所述顺序在衬底上形成界面绝缘层和高电容率层; 在高电介质层上形成牺牲层的图案; 在形成有牺牲层的第一区域和形成牺牲层的第二区域的高介电常数层上形成含有金属元素的含金属膜; 通过进行热处理，将金属元素引入第二区域中的界面绝缘层与高电容率层之间的界面; 并且通过湿法蚀刻去除牺牲层，其中在去除步骤中，牺牲层比高介电常数层容易蚀刻。 由此，能够获得可靠性优异的半导体装置。

公开(公告)号：US20070269955A2

公开(公告)日：2007-11-22

申请号：US11531610

申请日：2006-09-13

申请人： Ichiro YAMAMOTO

发明人： Ichiro YAMAMOTO

IPC分类号： H01L21/20

CPC分类号： H01L28/40 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31641 ,  H01L27/10811 ,  H01L27/10814 ,  H01L27/10852

摘要： A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

摘要翻译： 提供了一种半导体器件，其具有由锆合金制成的电容器绝缘膜，其是通过具有包含无定形氧化铝并且其组成为Al x Zr（1- （0.05 <= X <= 0.3），因此在形成MIM（金属绝缘体金属）结构的电容器的工艺中能够防止介电击穿 电容绝缘膜，而用作电容器绝缘膜的金属氧化物膜的相对介电常数保持较高。

公开(公告)号：US20080256350A1

公开(公告)日：2008-10-16

申请号：US12021695

申请日：2008-01-29

申请人： Taisuke HATTORI ,  Ichiro YAMAMOTO ,  Atsushi KOBAYASHI

发明人： Taisuke HATTORI ,  Ichiro YAMAMOTO ,  Atsushi KOBAYASHI

IPC分类号： G06F15/177

CPC分类号： G06F13/409 ,  G06F8/654

摘要： A motherboard can be installed commonly in each of a plurality of electronic devices of various types different in configuration without modifying the BIOS setting by comprising a setting information retaining section retaining setting information for a setting process for each electronic device; a specification information obtaining section obtaining specification information for specifying the type of each electronic device; a modifying information retaining section retaining modification information for modifying the setting information according to the type of each electronic device; a setting information modifying section modifying, on the basis of the specification information and the modification information retained, the setting information according to the type of the device in which the motherboard is installed; and a setting process performing section for performing the setting process for the device on the basis of the modified setting information.

摘要翻译： 主板可以通常配置在各种不同类型的电子设备中的每一个中，而不需要修改BIOS设置，包括设置信息保持部分，保留用于每个电子设备的设置过程的设置信息; 指定信息获取部获取用于指定每个电子设备的类型的指定信息; 修改信息保留部分，保存根据每个电子设备的类型修改设置信息的修改信息; 设置信息修改部分，根据所述指定信息和所保留的修改信息修改根据安装所述主板的设备的类型的设置信息; 以及设置处理执行部分，用于基于修改的设置信息执行针对该设备的设置处理。

公开(公告)号：US20150322837A1

公开(公告)日：2015-11-12

申请号：US14652830

申请日：2012-12-18

申请人： Keishi TAKADA ,  Nobumoto OHASHI ,  Shigeki NAKAYAMA ,  Akira MIKAMI ,  Kenji SAKURAI ,  Junichi MATUO ,  Yoshihisa TSUKAMOTO ,  Hiroshi OTSUKI ,  Ichiro YAMAMOTO

发明人： Keishi TAKADA ,  Nobumoto OHASHI ,  Shigeki NAKAYAMA ,  Akira MIKAMI ,  Kenji SAKURAI ,  Junichi MATSUO ,  Yoshihisa TSUKAMOTO ,  Hiroshi OTSUKI ,  Ichiro YAMAMOTO

IPC分类号： F01N3/20 ,  F01N3/035 ,  B01D53/94

CPC分类号： F01N3/208 ,  B01D53/9477 ,  B01D53/9495 ,  B01D2255/904 ,  F01N3/0253 ,  F01N3/035 ,  F01N3/103 ,  F01N3/106 ,  F01N3/2066 ,  F01N9/002 ,  F01N13/009 ,  F01N2510/06 ,  F01N2560/026 ,  F01N2610/02 ,  F01N2900/08 ,  Y02T10/24 ,  Y02T10/47

摘要： In order to suppress ammonia from flowing out during regeneration treatment of a filter carrying an SCR catalyst, the prevent invention provides an exhaust emission control system, of an internal combustion engine, including a first stage catalyst having an oxidation function, a fuel supply device configured to supply fuel to the first stage catalyst, a filter provided in the exhaust passage downstream of the first stage catalyst and carrying a selective redaction type NOx catalyst, an ammonia supply device configured to supply ammonia to the filter, a filter-regeneration-treatment executing unit configured to execute filter regeneration treatment, and a control unit configured to supply, when the filter regeneration treatment is not executed, the ammonia in an amount corresponding to an amount of the NOx emitted from the internal combustion engine, and to supply, when the filter regeneration treatment is executed, the ammonia in an amount corresponding to an amount of the NOx obtained by subtracting, from the amount of the NOx emitted from the internal combustion engine, an amount of the NOx reduced by the fuel which passes through the first stage catalyst.

摘要翻译： 为了在携带SCR催化剂的过滤器的再生处理期间抑制氨流出，本发明提供一种内燃机的废气排放控制系统，其包括具有氧化功能的第一级催化剂，配置在燃料供给装置 向第一阶段催化剂供给燃料，设置在第一阶段催化剂下游的排气路径中并承载选择性配位型NOx催化剂的过滤器，构造成向过滤器供给氨的氨供给装置，执行过滤器再生处理 被配置为执行过滤器再生处理的单元，以及控制单元，被配置为当不执行过滤器再生处理时，提供与从内燃机排出的NOx的量对应的氨，并且当 执行过滤器再生处理，氨的量与所得到的NOx的量相对应 通过从由内燃机排出的NOx的量减去通过第一级催化剂的燃料还原的NOx量。

公开(公告)号：US20150308320A1

公开(公告)日：2015-10-29

申请号：US14648727

申请日：2012-12-03

申请人： Junichi MATSUO ,  Nobumoto OHASHI ,  Shigeki NAKAYAMA ,  Kenji SAKURAI ,  Akira MIKAMI ,  Keishi TAKADA ,  Yoshihisa TSUKAMOTO ,  Hiroshi OTSUKI ,  Ichiro YAMAMOTO

发明人： Junichi MATSUO ,  Nobumoto OHASHI ,  Shigeki NAKAYAMA ,  Kenji SAKURAI ,  Akira MIKAMI ,  Keishi TAKADA ,  Yoshihisa TSUKAMOTO ,  Hiroshi OTSUKI ,  Ichiro YAMAMOTO

IPC分类号： F01N9/00 ,  F01N3/20 ,  F01N11/00 ,  F01N3/025

CPC分类号： F01N9/00 ,  F01N3/025 ,  F01N3/0253 ,  F01N3/035 ,  F01N3/103 ,  F01N3/106 ,  F01N3/2066 ,  F01N3/208 ,  F01N9/002 ,  F01N11/002 ,  F01N13/009 ,  F01N2430/00 ,  F01N2560/06 ,  F01N2560/14 ,  F01N2570/18 ,  F01N2610/02 ,  F01N2900/0416 ,  F01N2900/1404 ,  F01N2900/1602 ,  F02D41/024 ,  F02D41/029 ,  Y02T10/24 ,  Y02T10/26 ,  Y02T10/47

摘要： In an exhaust gas purification system for an internal combustion engine provided with a filter supporting an SCR catalyst, the present invention is intended to suppress HC and CO from being discharged to the outside at the time of the execution of filter regeneration processing, and to carry out the filter regeneration processing in an efficient manner. In the present invention, a post-catalyst having an oxidation function is arranged in an exhaust passage at the downstream side of the filter. Then, when the temperature of the post-catalyst is lower than a predetermined activation temperature at the time the execution of the filter regeneration processing is requested, the temperature of the post-catalyst is raised by carrying out control of raising the temperature of the exhaust gas discharged from the internal combustion engine, and control increasing the flow rate of the exhaust gas, before the execution of the filter regeneration processing.

摘要翻译： 在具有支撑SCR催化剂的过滤器的内燃机的排气净化系统中，本发明旨在在执行过滤器再生处理时抑制HC和CO被排出到外部，并且携带 以有效的方式进行过滤器再生处理。 在本发明中，具有氧化功能的后催化剂配置在过滤器的下游侧的排气通路中。 然后，当要求执行过滤器再生处理时，后催化剂的温度低于预定的活化温度时，通过进行提高排气温度的控制来提高后催化剂的温度 在进行过滤器再生处理之前，从内燃机排出的气体，并且控制增加废气的流量。

公开(公告)号：US20150330275A1

公开(公告)日：2015-11-19

申请号：US14655586

申请日：2012-12-26

申请人： Akira MIKAMI ,  Shigeki NAKAYAMA ,  Keishi TAKADA ,  Kenji SAKURAI ,  Yoshihisa TUKAMOTO ,  Hiroshi OTSUKI ,  Junichi MATSUO ,  Ichiro YAMAMOTO ,  Nobumoto OHASHI

发明人： Akira MIKAMI ,  Shigeki NAKAYAMA ,  Nobumoto OHASHI ,  Keishi TAKADA ,  Kenji SAKURAI ,  Yoshihisa TSUKAMOTO ,  Hiroshi OTSUKI ,  Junichi MATSUO ,  Ichiro YAMAMOTO

IPC分类号： F01N3/025 ,  F01N3/035 ,  F01N3/20 ,  F01N9/00

CPC分类号： F01N3/0253 ,  F01N3/035 ,  F01N3/106 ,  F01N3/2066 ,  F01N3/208 ,  F01N9/002 ,  F01N13/009 ,  F01N2560/06 ,  F01N2610/02 ,  F01N2610/03 ,  F02D41/0245 ,  F02D41/029 ,  Y02T10/24 ,  Y02T10/26 ,  Y02T10/47

摘要： An object of the present invention is to suppress a reduction in a NOx purification ratio accompanying filter regeneration processing in an exhaust gas purification system for an internal combustion engine that includes a filter carrying an SCR catalyst. In the present invention, the temperature of the filter is increased following completion of the filter regeneration processing by increasing the temperature of exhaust gas discharged from the internal combustion engine, and in so doing, HC adhered to the filter is removed.

摘要翻译： 本发明的目的在于，抑制伴随过滤器再生处理的NOx净化率的降低，该排气净化系统包括具有SCR催化剂的过滤器的内燃机。 在本发明中，通过增加从内燃机排出的废气的温度，在过滤器再生处理完成之后，过滤器的温度上升，从而除去附着在过滤器上的HC。

公开(公告)号：US20090263976A1

公开(公告)日：2009-10-22

申请号：US12472118

申请日：2009-05-26

申请人： Ichiro YAMAMOTO ,  Koji WATANABE

发明人： Ichiro YAMAMOTO ,  Koji WATANABE

IPC分类号： H01L21/46

CPC分类号： C23C16/56 ,  C23C16/401 ,  C23C16/44

摘要： Variation in the thickness of the deposited films depending on number of the processed product wafers in the deposition process employing a batch type CVD apparatus is inhibited to provide a manufacture of the film having a predetermined thickness with an improved reproducibility. The deposition apparatus 100 comprises a deposition reactor 101 that is capable of containing product wafers 107 and dummy wafers 109, boat 105, on which product wafer 107 or the dummy wafer 109 is mounted, and a heater 111 provided outside of the deposition reactor 101 along a reactor wall 103. Further, the deposition apparatus 100 comprises a gas supplying system including a high-k source material supplying line 113 and SiO2 source material supplying line 115, and a controller 121 that provides a control to the supply of a gas from the gas supplying system to the deposition reactor 101.

摘要翻译： 根据使用间歇型CVD装置的沉积工艺中的加工产品晶片的数量，沉积膜厚度的变化被抑制，从而提供具有预定厚度的膜，并且具有改进的再现性。 沉积设备100包括能够容纳产品晶片107和虚设晶片109，安装有产品晶片107或虚设晶片109的船105的沉积反应器101和沿着沉积反应器101的外部设置的加热器111 反应器壁103.此外，沉积设备100包括包括高k源材料供应管线113和SiO2源材料供应管线115的气体供应系统，以及控制器121，其提供对来自 气体供给系统到沉积反应器101。