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公开(公告)号:US20120052680A1
公开(公告)日:2012-03-01
申请号:US13041543
申请日:2011-03-07
申请人: Naoshi SAKUMA , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
发明人: Naoshi SAKUMA , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
IPC分类号: H01L21/28
CPC分类号: H01L21/76879 , H01L21/28556 , H01L21/76876 , H01L21/76883 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要: a manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.
摘要翻译: 半导体衬底的制造方法包括以下步骤:在衬底上形成第一布线层; 在所述布线层上形成具有通孔的层间绝缘膜; 在通孔中形成碳纳米管; 完全对基材进行氟化处理; 在其中具有碳纳米管的通孔中形成嵌入膜; 并抛光衬底以使衬底完全平坦化。
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公开(公告)号:US20170229301A9
公开(公告)日:2017-08-10
申请号:US13622089
申请日:2012-09-18
申请人: Masayuki KITAMURA , Atsuko SAKATA , Makoto WADA , Yuichi YAMAZAKI , Masayuki KATAGIRI , Akihiro KAJITA , Tadashi SAKAI , Naoshi SAKUMA , Ichiro MIZUSHIMA
发明人: Masayuki KITAMURA , Atsuko SAKATA , Makoto WADA , Yuichi YAMAZAKI , Masayuki KATAGIRI , Akihiro KAJITA , Tadashi SAKAI , Naoshi SAKUMA , Ichiro MIZUSHIMA
CPC分类号: H01L21/76846 , H01L21/02373 , H01L21/76855 , H01L21/76858 , H01L21/76861 , H01L21/76876 , H01L23/53276 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.
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公开(公告)号:US20130217226A1
公开(公告)日:2013-08-22
申请号:US13622089
申请日:2012-09-18
申请人: Masayuki KITAMURA , Atsuko SAKATA , Makoto WADA , Yuichi YAMAZAKI , Masayuki KATAGIRI , Akihiro KAJITA , Tadashi SAKAI , Naoshi SAKUMA , Ichiro MIZUSHIMA
发明人: Masayuki KITAMURA , Atsuko SAKATA , Makoto WADA , Yuichi YAMAZAKI , Masayuki KATAGIRI , Akihiro KAJITA , Tadashi SAKAI , Naoshi SAKUMA , Ichiro MIZUSHIMA
CPC分类号: H01L21/76846 , H01L21/02373 , H01L21/76855 , H01L21/76858 , H01L21/76861 , H01L21/76876 , H01L23/53276 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.
摘要翻译: 根据一个实施例,公开了一种用于制造半导体器件的方法。 该方法包括在半导体衬底的表面上方形成助催化剂层和催化剂层。 助催化剂层和催化剂层具有fcc结构。 fcc结构形成为使得fcc结构的(111)面平行于半导体衬底的表面定向。 催化剂包括与助催化剂层接触的部分。 该部分具有fcc结构。 通过氧化和还原处理使催化剂层的暴露表面平坦化。 在催化剂层上形成石墨烯层。
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公开(公告)号:US20080218077A1
公开(公告)日:2008-09-11
申请号:US11850416
申请日:2007-09-05
申请人: Tadashi SAKAI , Tomio ONO , Naoshi SAKUMA , Hiroaki YOSHIDA , Mariko SUZUKI
发明人: Tadashi SAKAI , Tomio ONO , Naoshi SAKUMA , Hiroaki YOSHIDA , Mariko SUZUKI
IPC分类号: H01J1/62
CPC分类号: H01J61/0732 , H01J9/04 , H01J9/247 , H01J61/0735 , H01J61/12 , H01J61/302 , H01J61/82 , H01J61/827
摘要: A discharge light-emitting device includes a chamber that encapsulates a discharge gas and has a light permeable portion; and at least a pair of electrodes that are arranged in the chamber and are made of a wide-gap semiconductor, wherein the pair of electrodes are connected to each other and at least a portion where the electrodes are connected to each other is formed into a narrow portion.
摘要翻译: 放电发光器件包括封装放电气体并具有透光部分的腔室; 以及至少一对电极,其布置在所述腔室中并且由宽间隙半导体制成,其中所述一对电极彼此连接,并且至少所述电极彼此连接的部分形成为 狭窄部分。
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