公开(公告)号：US09117885B2

公开(公告)日：2015-08-25

申请号：US13216445

申请日：2011-08-24

申请人： Tatsuro Saito ,  Makoto Wada ,  Akihiro Kajita

发明人： Tatsuro Saito ,  Makoto Wada ,  Akihiro Kajita

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/285 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/28556 ,  H01L21/76834 ,  H01L21/76847 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/522 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a graphene interconnection includes a first insulating film, a first catalyst film, and a first graphene layer. A first insulating film includes an interconnection trench. A first catalyst film is formed on the first insulating film on both side surfaces of the interconnection trench. A first graphene layer is formed on the first catalyst film on the both side surfaces of the interconnection trench, and including graphene sheets stacked in a direction perpendicularly to the both side surfaces.

摘要翻译： 根据一个实施例，石墨烯互连包括第一绝缘膜，第一催化剂膜和第一石墨烯层。 第一绝缘膜包括互连沟槽。 在互连沟槽的两个侧表面上的第一绝缘膜上形成第一催化剂膜。 第一石墨烯层形成在互连沟槽的两个侧表面上的第一催化剂膜上，并且包括沿垂直于两个侧表面的方向堆叠的石墨烯片。

公开(公告)号：US09027970B2

公开(公告)日：2015-05-12

申请号：US14116353

申请日：2011-07-21

申请人： Makoto Wada ,  Koji Katsuta

发明人： Makoto Wada ,  Koji Katsuta

IPC分类号： F16L23/04 ,  F15B21/04 ,  F16L17/06

CPC分类号： F15B21/048 ,  F16L17/06 ,  F16L23/04

摘要： In relation to fluid pressure devices, a connection apparatus, by which a filter, a regulator and a lubricator that constitute a fluid pressure unit are mutually connected, is equipped with a base member having a hole therein, a pair of first and second fastening members mounted respectively on one side surface and another side surface of the base member, and first and second holders in which the first and second fastening members are retained. Additionally, the first and second holders engage respectively with engagement projections of the filter, the regulator and the lubricator, and first and second nuts are screw-engaged with the first and second fastening members, whereby the fluid pressure devices are connected together through the first and second holders.

摘要翻译： 关于流体压力装置，构成流体压力单元的过滤器，调节器和润滑器相互连接的连接装置配备有在其中具有孔的基座构件，一对第一和第二紧固构件 分别安装在基部构件的一个侧面和另一个侧面上，第一和第二保持件保持第一和第二紧固构件。 此外，第一和第二保持器分别接合过滤器，调节器和润滑器的接合突起，并且第一和第二螺母与第一和第二紧固构件螺纹接合，由此流体压力装置通过第一和第二紧固构件连接在一起 和第二个持有人。

公开(公告)号：USD696100S1

公开(公告)日：2013-12-24

申请号：US29396128

申请日：2011-06-27

申请人： Makoto Wada ,  Koji Katsuta

设计人： Makoto Wada ,  Koji Katsuta

公开(公告)号：US08507138B2

公开(公告)日：2013-08-13

申请号：US12456243

申请日：2009-06-12

申请人： Kouichi Yamada ,  Kazunori Fukuma ,  Makoto Wada

发明人： Kouichi Yamada ,  Kazunori Fukuma ,  Makoto Wada

IPC分类号： H01M8/04 ,  F04F5/48

CPC分类号： H01M8/04089 ,  F04F5/18 ,  F04F5/36 ,  F04F5/463 ,  Y10T137/2572

摘要： An ejector for a fuel cell system of the present invention includes a nozzle having a nozzle hole for discharging hydrogen supplied via an inlet port of an ejector body, a diffuser for mixing hydrogen discharged from the nozzle hole and hydrogen off-gas discharged and returned via a circulation passage from a fuel cell, a needle displacing in the axial direction by a driving force of a solenoid, and a bearing member held in a hollow portion of the nozzle, and having a through hole that movably supports the needle in the axial direction.

公开(公告)号：US08410608B2

公开(公告)日：2013-04-02

申请号：US13233312

申请日：2011-09-15

申请人： Makoto Wada ,  Yuichi Yamazaki

发明人： Makoto Wada ,  Yuichi Yamazaki

IPC分类号： H01L23/48

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a device includes an insulating layer with a first trench, a first interconnect layer in the first trench, the first interconnect layer including copper and includes a concave portion, and a first graphene sheet on an inner surface of the concave portion.

摘要翻译： 根据一个实施例，一种器件包括具有第一沟槽的绝缘层，第一沟槽中的第一互连层，包括铜的第一互连层，并包括凹部，以及在凹部的内表面上的第一石墨烯片 。

公开(公告)号：US08378335B2

公开(公告)日：2013-02-19

申请号：US13075591

申请日：2011-03-30

申请人： Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai

发明人： Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai

IPC分类号： H01L29/06

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  H01L21/02491 ,  H01L21/02527 ,  H01L29/45 ,  H01L29/66015 ,  H01L29/76

摘要： A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.

摘要翻译： 根据实施例的半导体器件包括催化金属膜，石墨烯膜，接触插塞和调整膜。 催化金属膜形成在基板的上方。 在催化金属膜上形成石墨烯膜。 接触塞连接到石墨烯膜。 调整膜形成在与石墨烯膜的表面的接触插塞连接的区域以外的区域中，以相对于费米能级与连接到接触插塞的区域相同的方向调节狄拉克点位置。

公开(公告)号：US08198193B2

公开(公告)日：2012-06-12

申请号：US13041543

申请日：2011-03-07

申请人： Naoshi Sakuma ,  Tadashi Sakai ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Mariko Suzuki ,  Makoto Wada

发明人： Naoshi Sakuma ,  Tadashi Sakai ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Mariko Suzuki ,  Makoto Wada

IPC分类号： H01L21/4763

CPC分类号： H01L21/76879 ,  H01L21/28556 ,  H01L21/76876 ,  H01L21/76883 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.

摘要翻译： 半导体衬底的制造方法包括以下步骤：在衬底上形成第一布线层; 在所述布线层上形成具有通孔的层间绝缘膜; 在通孔中形成碳纳米管; 完全对基材进行氟化处理; 在其中具有碳纳米管的通孔中形成嵌入膜; 并抛光衬底以使衬底完全平坦化。

公开(公告)号：US08169085B2

公开(公告)日：2012-05-01

申请号：US12696276

申请日：2010-01-29

申请人： Yousuke Akimoto ,  Makoto Wada

发明人： Yousuke Akimoto ,  Makoto Wada

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/53276 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76838 ,  H01L21/76855 ,  H01L21/76876 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S977/72 ,  H01L2924/00

摘要： A semiconductor device according to one embodiment includes: a substrate; a wiring provided above the substrate and including a graphene nanoribbon layer comprising a plurality of laminated graphene nanoribbon sheets; and a wiring connecting member penetrating at least one of the plurality of graphene nanoribbon sheets for connecting the wiring and a conductive member above or below the wiring.

摘要翻译： 根据一个实施例的半导体器件包括：衬底; 设置在所述基板上方并且包括石墨烯纳米纤维层的布线，所述石墨烯纳米纤维层包括多个层叠的石墨烯纳米薄片; 以及布线连接构件，其穿透所述多个石墨烯纳米纤维板中的至少一个，用于将所述布线连接到所述布线上方或下方的导电构件。

公开(公告)号：US20120080662A1

公开(公告)日：2012-04-05

申请号：US13216445

申请日：2011-08-24

申请人： Tatsuro Saito ,  Makoto Wada ,  Akihiro Kajita

发明人： Tatsuro Saito ,  Makoto Wada ,  Akihiro Kajita

IPC分类号： H01L29/15 ,  H01L21/283

CPC分类号： H01L21/76844 ,  H01L21/28556 ,  H01L21/76834 ,  H01L21/76847 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/522 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a graphene interconnection includes a first insulating film, a first catalyst film, and a first graphene layer. A first insulating film includes an interconnection trench. A first catalyst film is formed on the first insulating film on both side surfaces of the interconnection trench. A first graphene layer is formed on the first catalyst film on the both side surfaces of the interconnection trench, and including graphene sheets stacked in a direction perpendicularly to the both side surfaces.

摘要翻译： 根据一个实施例，石墨烯互连包括第一绝缘膜，第一催化剂膜和第一石墨烯层。 第一绝缘膜包括互连沟槽。 在互连沟槽的两个侧表面上的第一绝缘膜上形成第一催化剂膜。 第一石墨烯层形成在互连沟槽的两个侧表面上的第一催化剂膜上，并且包括沿垂直于两个侧表面的方向堆叠的石墨烯片。

公开(公告)号：US20110309517A1

公开(公告)日：2011-12-22

申请号：US13053407

申请日：2011-03-22

申请人： Hiroko Miki ,  Makoto Wada ,  Yumi Hayashi

发明人： Hiroko Miki ,  Makoto Wada ,  Yumi Hayashi

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L21/7682 ,  H01L21/76834 ,  H01L21/76852 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, a semiconductor device including a substrate provided with a semiconductor element, and first and second interconnects provided above the substrate, each of the first and second interconnects having a line shape in a plan view, and the first and second interconnects being substantially parallel to each other. The device further includes a first via plug provided above the substrate, electrically connected to a lower surface of the first interconnect on a second interconnect side, and including a first recess part at an upper end of the first via plug under a first region between interconnects, the first region between interconnects being a region between the first interconnect and the second interconnect. The device further includes a via layer insulator provided above the substrate and including the first via plug, and a first trench under the first region between interconnects, the first trench including a region adjacent to the first via plug in a width direction of the first and second interconnects. Furthermore, an air gap is included in the first region between interconnects and in the first trench.

摘要翻译： 在一个实施例中，包括设置有半导体元件的衬底的半导体器件以及设置在衬底上方的第一和第二互连，第一和第二互连中的每一个在平面图中具有线状，并且第一和第二互连基本上 彼此平行。 该装置还包括设置在基板上方的第一通孔塞，在第二互连侧上电连接到第一互连件的下表面，并且在互连件之间的第一区域之下包括在第一通孔插头的上端处的第一凹部 互连之间的第一区域是第一互连和第二互连之间的区域。 该器件还包括设置在衬底上方并且包括第一通孔插头的通孔层绝缘体，以及在互连之间的第一区域下方的第一沟槽，第一沟槽包括在第一沟槽的宽度方向上与第一通孔插塞相邻的区域， 第二互连。 此外，在互连和第一沟槽中的第一区域中包括气隙。