公开(公告)号：US09130018B2

公开(公告)日：2015-09-08

申请号：US13584327

申请日：2012-08-13

申请人： Naotsugu Hoshi ,  Noriyuki Kobayashi

发明人： Naotsugu Hoshi ,  Noriyuki Kobayashi

IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/768 ,  H01J37/32 ,  H01L21/311

CPC分类号： H01L21/76813 ,  H01J37/32091 ,  H01J37/32926 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814

摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.

摘要翻译： 能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。 等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部 层间绝缘膜。 层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

公开(公告)号：US20090111275A1

公开(公告)日：2009-04-30

申请号：US12254943

申请日：2008-10-21

申请人： Naotsugu HOSHI ,  Noriyuki Kobayashi

发明人： Naotsugu HOSHI ,  Noriyuki Kobayashi

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76834

摘要： A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CyFz (y and z are predetermined natural numbers) gas and N2 gas, and the flow rate of the N2 gas in the process gas is higher than the flow rate of the CyFz gas.

摘要翻译： 等离子体蚀刻方法，可以防止残留物附着到通孔和沟槽的底部和侧面。 由CwFx（x和w是预定的自然数）形成的层间绝缘膜和形成在基板上的金属层或含金属层同时暴露于由处理气体产生的等离子体。 处理气体是包括CyFz（y和z是预定的自然数）气体和N 2气体的混合气体，并且处理气体中的N 2气体的流量高于CyFz气体的流量。

公开(公告)号：US20120309203A1

公开(公告)日：2012-12-06

申请号：US13584327

申请日：2012-08-13

申请人： Naotsugu HOSHI ,  Noriyuki Kobayashi

发明人： Naotsugu HOSHI ,  Noriyuki Kobayashi

IPC分类号： H01L21/3065

CPC分类号： H01L21/76813 ,  H01J37/32091 ,  H01J37/32926 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814

摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.

摘要翻译： 能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。 等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部 层间绝缘膜。 层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

公开(公告)号：US09384999B2

公开(公告)日：2016-07-05

申请号：US12254943

申请日：2008-10-21

申请人： Naotsugu Hoshi ,  Noriyuki Kobayashi

发明人： Naotsugu Hoshi ,  Noriyuki Kobayashi

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/768

CPC分类号： H01L21/31138 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76834

摘要： A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CyFz (y and z are predetermined natural numbers) gas and N2 gas, and the flow rate of the N2 gas in the process gas is higher than the flow rate of the CyFz gas.

摘要翻译： 等离子体蚀刻方法，可以防止残留物附着到通孔和沟槽的底部和侧面。 由CwFx（x和w是预定的自然数）形成的层间绝缘膜和形成在基板上的金属层或含金属层同时暴露于由处理气体产生的等离子体。 处理气体是包括CyFz（y和z是预定的自然数）气体和N 2气体的混合气体，并且处理气体中的N 2气体的流量高于CyFz气体的流量。

公开(公告)号：US08252694B2

公开(公告)日：2012-08-28

申请号：US12273209

申请日：2008-11-18

申请人： Naotsugu Hoshi ,  Noriyuki Kobayashi

发明人： Naotsugu Hoshi ,  Noriyuki Kobayashi

IPC分类号： H01L21/302

CPC分类号： H01L21/76813 ,  H01J37/32091 ,  H01J37/32926 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814

摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.

摘要翻译： 能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。 等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部 层间绝缘膜。 层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

公开(公告)号：US20090137127A1

公开(公告)日：2009-05-28

申请号：US12273209

申请日：2008-11-18

申请人： Naotsugu HOSHI ,  Noriyuki Kobayashi

发明人： Naotsugu HOSHI ,  Noriyuki Kobayashi

IPC分类号： H01L21/467 ,  G06F19/00

CPC分类号： H01L21/76813 ,  H01J37/32091 ,  H01J37/32926 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814

摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.

摘要翻译： 能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。 等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部 层间绝缘膜。 层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

公开(公告)号：US10551589B2

公开(公告)日：2020-02-04

申请号：US15551765

申请日：2016-02-17

申请人： Toshihiko Honma ,  Noriyuki Kobayashi

发明人： Toshihiko Honma ,  Noriyuki Kobayashi

IPC分类号： G02B7/10 ,  G02B7/08 ,  G02B7/02 ,  G02B7/04 ,  G02B7/09 ,  G03B3/10 ,  H02K41/035

摘要： Using drive force from a voice coil motor constituted of an autofocus coil unit and an autofocus magnet unit, a lens drive device automatically carries out focusing by moving an autofocus movable unit, which includes the autofocus coil unit, with respect to an autofocus fixed unit, which includes the autofocus magnet unit, in the direction of an optical axis. The autofocus movable unit has a lens holder that holds the autofocus coil unit. The lens holder has a cut-out part recessed on the inside in the radial direction from the outer periphery of the holder, and a binding part that protrudes to the outside in the radial direction from the cut-out part and binds an end part of the autofocus coil unit. The tip of the binding part is positioned to the inside of the outer periphery of the holder in the radial direction.

公开(公告)号：US08901303B2

公开(公告)日：2014-12-02

申请号：US13067838

申请日：2011-06-29

申请人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

发明人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

IPC分类号： C07D401/06 ,  C07D215/227 ,  A61K31/497

CPC分类号： C07D215/227 ,  C07B2200/13 ,  C07D215/22 ,  Y10T428/2982

摘要： The present invention provides low hygroscopic forms of aripiprazole and processes for the preparation thereof which will not convert to a hydrate or lose their original solubility even when a medicinal preparation containing the anhydrous Aripiprazole crystals is stored for an extended period.

公开(公告)号：US20130344346A1

公开(公告)日：2013-12-26

申请号：US13980405

申请日：2012-01-10

申请人： Maiko Suzuki ,  Satoshi Kitada ,  Tomoyuki Nemoto ,  Noriyuki Kobayashi ,  Kouichirou Taniguchi

发明人： Maiko Suzuki ,  Satoshi Kitada ,  Tomoyuki Nemoto ,  Noriyuki Kobayashi ,  Kouichirou Taniguchi

IPC分类号： B32B27/08

CPC分类号： B32B27/08 ,  B32B27/18 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/327 ,  B32B2250/03 ,  B32B2250/242 ,  B32B2250/246 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/30 ,  B32B2307/306 ,  B32B2307/412 ,  B32B2307/50 ,  B32B2307/514 ,  B32B2307/54 ,  B32B2307/58 ,  B32B2307/704 ,  B32B2307/734 ,  B32B2439/70 ,  B32B2553/00 ,  C08L23/10 ,  C08L2205/02 ,  Y10T428/31844 ,  Y10T428/31913 ,  Y10T428/3192

摘要： There is provided a packaging film which has a good suitability for use in an automatic packaging machine, and is free from occurrence of sagging even when stored in a low-temperature condition for a long period of time as well as hardly suffers from occurrence of whitening when subjected to high stretch packaging. The stretch packaging film of the present invention comprises a laminated film having at least three layers comprising opposite surface layers each comprising an ethylene-based resin (A) as a main component and an intermediate layer comprising a propylene-based resin (C) and a propylene-based resin (B) which respectively satisfy specific conditions, at a specific compounding ratio, and having a heat of crystallization (ΔHc) of 10 to 60 J/g as measured at a temperature drop rate of 10° C./min using a differential scanning calorimeter (DSC) and a storage elastic modulus (E′) at 20° C. of 100 MPa to 1 GPa as measured with respect to the laminated film at an oscillation frequency of 10 Hz and a distortion of 0.1% by a dynamic viscoelasticity measuring method.

摘要翻译： 提供了一种在自动包装机中具有良好适用性的包装膜，并且即使在长时间的低温条件下储存时也不会发生流挂，并且几乎不发生白化 当经受高拉伸包装时。 本发明的拉伸包装膜包括具有至少三层的层压膜，其包含各自包含乙烯类树脂（A）作为主要成分的相对表面层，以及包含丙烯类树脂（C）和 丙烯类树脂（B）分别满足特定条件，特定配混比，结晶热（DeltaHc）为10〜60J / g，以10℃/分钟的降温速度测定，使用 差示扫描量热计（DSC）和在20℃下的储能弹性模量（E'）为100MPa至1GPa，相对于叠层膜以10Hz的振荡频率和0.1％的失真度测量 动态粘弹性测量方法。

公开(公告)号：US08580796B2

公开(公告)日：2013-11-12

申请号：US13350117

申请日：2012-01-13

申请人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

发明人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

IPC分类号： A61K31/497 ,  C07D401/06

CPC分类号： C07D215/227 ,  C07B2200/13 ,  C07D215/22 ,  Y10T428/2982

摘要： The present invention provides low hygroscopic forms of aripiprazole and processes for the preparation thereof which will not convert to a hydrate or lose their original solubility even when a medicinal preparation containing the anhydrous Aripiprazole crystals is stored for an extended period.

摘要翻译： 本发明提供低吸湿形式的阿立哌唑及其制备方法，即使当含有无水阿立哌唑晶体的药物制剂长时间储存​​时，其也不会转化为水合物或丧失其原始溶解度。