公开(公告)号：US06995961B2

公开(公告)日：2006-02-07

申请号：US10400946

申请日：2003-03-27

申请人： Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu ,  Masahiko Ishizone

发明人： Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu ,  Masahiko Ishizone

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909

摘要： Changes of the direction of magnetization at the central region of the free magnetic layer are facilitated by using a layer of a magnetic material having a small exchange stiffness constant such as a NiaFeb layer (a and b are represented in at %, and satisfy the relation of a>80 and a+b=100) and NiFeX layer (X is at least one element selected from Mn, Cu, Zn, Ti, Al, Ge, Si, Cr, V, Sn, Ir, Ru, Nb, Sb, W, Mo, Os and Ta) for the magnetic material layer of the free magnetic layer.

摘要翻译： 通过使用具有小的交换刚度常数的磁性材料层，例如NiBaBeBb，可以促进自由磁性层中心区域的磁化方向的变化， （a和b以％表示，满足a> 80和a + b = 100的关系）和NiFeX层（X是选自Mn，Cu，Zn，Ti，Al中的至少一种元素， Ge，Si，Cr，V，Sn，Ir，Ru，Nb，Sb，W，Mo，Os和Ta）。

公开(公告)号：US07433161B2

公开(公告)日：2008-10-07

申请号：US11034386

申请日：2005-01-12

申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

公开(公告)号：US20080145523A1

公开(公告)日：2008-06-19

申请号：US12033272

申请日：2008-02-19

申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

IPC分类号： B05D5/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

公开(公告)号：US20060110625A1

公开(公告)日：2006-05-25

申请号：US11266956

申请日：2005-10-26

申请人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： H01F10/3277 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

公开(公告)号：US20050157435A1

公开(公告)日：2005-07-21

申请号：US11034386

申请日：2005-01-12

申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/30 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

公开(公告)号：US07567412B2

公开(公告)日：2009-07-28

申请号：US11266956

申请日：2005-10-26

申请人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01F10/3277 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

摘要翻译： 磁传感元件包括具有包括与非磁性材料层接触的第一增强层，第二增强层和低矫顽力层的三层结构的自由磁性层。 第二增强层具有比第一增强层更低的磁致伸缩系数λ。 如果使用具有双层结构的这种增强层，而不是已知的单层结构，并且第二增强层具有比第一增强层更低的磁致伸缩系数λ，则可以增加磁传感元件的磁阻的变化率 而自由磁性层的磁致伸缩系数λ则没有增加。

公开(公告)号：US08516906B2

公开(公告)日：2013-08-27

申请号：US13475579

申请日：2012-05-18

申请人： Eiji Umetsu ,  Masahiko Ishizone ,  Motoki Hirayama ,  Hideki Gochou

发明人： Eiji Umetsu ,  Masahiko Ishizone ,  Motoki Hirayama ,  Hideki Gochou

IPC分类号： G01L1/04 ,  G01L1/10 ,  H01L21/00

CPC分类号： G01L1/18 ,  G01L5/162

摘要： A sensor substrate includes a plurality of piezoresistance elements. The electrical resistance of each piezoresistance element changes in accordance with an amount of displacement of a displacement portion displaced by an external load applied through a pressure receiving unit. A base substrate supports the sensor substrate. The sensor substrate and the base substrate each include a support supporting the displacement portion such that the displacement portion can be displaced and a plurality of electrically connecting portions electrically connected to the plurality of piezoresistance elements. The supports of the sensor and base substrates are joined to each other and the plurality of electrically connecting portions of the sensor and base substrates are joined to each other. Furthermore, in each of the sensor and base substrates, either the support or the plurality of electrically connecting portions or both extend to the periphery of the sensor substrate or the base substrate.

摘要翻译： 传感器基板包括多个压阻元件。 每个压电元件的电阻根据通过压力接收单元施加的外部负载而移位的位移部分的位移量而变化。 基底支撑传感器基底。 传感器基板和基板各自包括支撑位移部分的支撑件，使得位移部分可以移位，并且多个电连接部分电连接到多个压阻元件。 传感器和基底基板的支撑件彼此接合，并且传感器和基底基板的多个电连接部分彼此接合。 此外，在每个传感器和基底基板中，支撑件或多个电连接部分或两者都延伸到传感器基板或基底基板的周边。

公开(公告)号：US08947381B2

公开(公告)日：2015-02-03

申请号：US13405829

申请日：2012-02-27

申请人： Motoya Jiyama ,  Naoki Sugamoto ,  Nobuyuki Batou ,  Kiyoshi Hamatani ,  Kohji Miyazato ,  Hiroyuki Yanai ,  Sadaharu Yamamoto ,  Eiji Umetsu ,  Shuji Yanagi ,  Masahiko Ishizone

发明人： Motoya Jiyama ,  Naoki Sugamoto ,  Nobuyuki Batou ,  Kiyoshi Hamatani ,  Kohji Miyazato ,  Hiroyuki Yanai ,  Sadaharu Yamamoto ,  Eiji Umetsu ,  Shuji Yanagi ,  Masahiko Ishizone

IPC分类号： G06F3/041

CPC分类号： G06F3/041 ,  G06F3/0414 ,  G06F3/0418 ,  G06F2203/04106

摘要： A display device according to an embodiment includes a touch panel, a plurality of detecting units, a blocking unit, and a calculating unit. The display device is incorporated in a vehicle, and the touch panel receives a pressing operation. The plurality of detecting units detect a pressure value on the touch panel.

摘要翻译： 根据实施例的显示装置包括触摸面板，多个检测单元，阻挡单元和计算单元。 显示装置被结合在车辆中，并且触摸面板接收按压操作。 多个检测单元检测触摸面板上的压力值。

公开(公告)号：US06346338B1

公开(公告)日：2002-02-12

申请号：US09685435

申请日：2000-10-10

申请人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Kobayashi ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

发明人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Kobayashi ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

IPC分类号： G11B539

CPC分类号： G11B5/3967 ,  G11B5/112 ,  G11B5/3106 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/131 ,  H01F10/265 ,  Y10S428/90 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12931

摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe—M—O alloy, an Fe—M—T—O alloy or an NI—Fe—X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

摘要翻译： 薄膜磁头包括由Fe-Mo合金，Fe-MTO合金或NI-Fe-X合金制成的上芯层和下芯层，使得上芯层具有高的饱和磁通量 密度低，矫顽力低，电阻率高，下芯层具有比上芯层低的饱和磁通密度，低矫顽力，高电阻率和低磁致伸缩常数。 此外，下芯层形成为使得厚度朝向两个侧端逐渐减小，并且可以在下芯层上形成间隙层以具有均匀的厚度。 由于通过溅射形成下芯层，因此可以使用具有优异的软磁性材料的材料，从而能够以高频进行记录。

公开(公告)号：US6150046A

公开(公告)日：2000-11-21

申请号：US16838

申请日：1998-01-30

申请人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

发明人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

IPC分类号： G11B5/11 ,  G11B5/31 ,  G11B5/39 ,  H01F10/13 ,  G11B5/66

CPC分类号： G11B5/3967 ,  G11B5/3106 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3163 ,  H01F10/131 ,  G11B5/112 ,  G11B5/3116 ,  G11B5/3903 ,  H01F10/265 ,  Y10S428/90 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12931

摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe--M--O alloy, an Fe--M--T--O alloy or an NI--Fe--X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.