公开(公告)号：US06995961B2

公开(公告)日：2006-02-07

申请号：US10400946

申请日：2003-03-27

申请人： Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu ,  Masahiko Ishizone

发明人： Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu ,  Masahiko Ishizone

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909

摘要： Changes of the direction of magnetization at the central region of the free magnetic layer are facilitated by using a layer of a magnetic material having a small exchange stiffness constant such as a NiaFeb layer (a and b are represented in at %, and satisfy the relation of a>80 and a+b=100) and NiFeX layer (X is at least one element selected from Mn, Cu, Zn, Ti, Al, Ge, Si, Cr, V, Sn, Ir, Ru, Nb, Sb, W, Mo, Os and Ta) for the magnetic material layer of the free magnetic layer.

摘要翻译： 通过使用具有小的交换刚度常数的磁性材料层，例如NiBaBeBb，可以促进自由磁性层中心区域的磁化方向的变化， （a和b以％表示，满足a> 80和a + b = 100的关系）和NiFeX层（X是选自Mn，Cu，Zn，Ti，Al中的至少一种元素， Ge，Si，Cr，V，Sn，Ir，Ru，Nb，Sb，W，Mo，Os和Ta）。

公开(公告)号：US20050157435A1

公开(公告)日：2005-07-21

申请号：US11034386

申请日：2005-01-12

申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/30 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

公开(公告)号：US20060110625A1

公开(公告)日：2006-05-25

申请号：US11266956

申请日：2005-10-26

申请人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： H01F10/3277 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

公开(公告)号：US07567412B2

公开(公告)日：2009-07-28

申请号：US11266956

申请日：2005-10-26

申请人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01F10/3277 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

摘要翻译： 磁传感元件包括具有包括与非磁性材料层接触的第一增强层，第二增强层和低矫顽力层的三层结构的自由磁性层。 第二增强层具有比第一增强层更低的磁致伸缩系数λ。 如果使用具有双层结构的这种增强层，而不是已知的单层结构，并且第二增强层具有比第一增强层更低的磁致伸缩系数λ，则可以增加磁传感元件的磁阻的变化率 而自由磁性层的磁致伸缩系数λ则没有增加。

公开(公告)号：US07433161B2

公开(公告)日：2008-10-07

申请号：US11034386

申请日：2005-01-12

申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

公开(公告)号：US20080145523A1

公开(公告)日：2008-06-19

申请号：US12033272

申请日：2008-02-19

申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

IPC分类号： B05D5/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

公开(公告)号：US06346338B1

公开(公告)日：2002-02-12

申请号：US09685435

申请日：2000-10-10

申请人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Kobayashi ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

发明人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Kobayashi ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

IPC分类号： G11B539

CPC分类号： G11B5/3967 ,  G11B5/112 ,  G11B5/3106 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/131 ,  H01F10/265 ,  Y10S428/90 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12931

摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe—M—O alloy, an Fe—M—T—O alloy or an NI—Fe—X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

摘要翻译： 薄膜磁头包括由Fe-Mo合金，Fe-MTO合金或NI-Fe-X合金制成的上芯层和下芯层，使得上芯层具有高的饱和磁通量 密度低，矫顽力低，电阻率高，下芯层具有比上芯层低的饱和磁通密度，低矫顽力，高电阻率和低磁致伸缩常数。 此外，下芯层形成为使得厚度朝向两个侧端逐渐减小，并且可以在下芯层上形成间隙层以具有均匀的厚度。 由于通过溅射形成下芯层，因此可以使用具有优异的软磁性材料的材料，从而能够以高频进行记录。

公开(公告)号：US6150046A

公开(公告)日：2000-11-21

申请号：US16838

申请日：1998-01-30

申请人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

发明人： Toshinori Watanabe ,  Akira Takahashi ,  Fumihito Koike ,  Nobuhiro Hayashi ,  Yoshihiro Kanada ,  Kiyoshi Sato ,  Eiji Umetsu ,  Takashi Hatanai ,  Akihiro Makino

IPC分类号： G11B5/11 ,  G11B5/31 ,  G11B5/39 ,  H01F10/13 ,  G11B5/66

CPC分类号： G11B5/3967 ,  G11B5/3106 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3163 ,  H01F10/131 ,  G11B5/112 ,  G11B5/3116 ,  G11B5/3903 ,  H01F10/265 ,  Y10S428/90 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12931

摘要： A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe--M--O alloy, an Fe--M--T--O alloy or an NI--Fe--X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

公开(公告)号：US06639762B2

公开(公告)日：2003-10-28

申请号：US09764003

申请日：2001-01-17

申请人： Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide ,  Fumihito Koike ,  Naoya Hasegawa

发明人： Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide ,  Fumihito Koike ,  Naoya Hasegawa

IPC分类号： G11B533

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3948 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49034 ,  Y10T29/49043

摘要： A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state. In addition, magnetization directions of the second and the third pinned ferromagnetic layers, which are closer to the free magnetic layer, are antiparallel to each other.

摘要翻译： 提供了一种自旋阀薄膜磁性器件，其中可以减小不对称性。 自旋阀薄膜磁性装置包括自由磁性层和第一和第二固定磁性层，它们分别设置在自由磁性层的厚度方向的每一侧。 在自旋阀薄膜磁性器件中，自由磁性层由第一和第二铁磁性自由层构成，其中整个自由磁性层处于亚铁磁状态，第一固定磁性层由第一和第二铁磁性层组成， 第二固定铁磁层，其中整个第一固定磁性层处于亚铁磁状态，并且第二固定磁性层由第三和第四钉扎铁磁层构成，其中整个第二固定磁性层处于铁磁性 州。 此外，更靠近自由磁性层的第二和第三固定铁磁层的磁化方向彼此反平行。

公开(公告)号：US06500570B2

公开(公告)日：2002-12-31

申请号：US09730955

申请日：2000-12-05

申请人： Naoya Hasegawa ,  Fumihito Koike ,  Yosuke Ide

发明人： Naoya Hasegawa ,  Fumihito Koike ,  Yosuke Ide

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T428/1121

摘要： A spin-valve magnetoresistive element includes an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic interlayer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a pair of longitudinal biasing layers, and a pair of lead layers. When a detecting current is applied from the lead layers, the magnetization vector of the free magnetic layer is aligned in a direction intersecting the magnetization vector of the second pinned magnetic layer, and the magnetization vector of the second pinned magnetic layer is tilted by an angle &thgr; from the normal of a track width direction toward a direction opposite to a longitudinal biasing magnetic field, in order to reduce asymmetry of the output.

摘要翻译： 自旋阀磁阻元件包括反铁磁层，第一钉扎磁性层，非磁性中间层，第二钉扎磁性层，非磁性导电层，自由磁性层，一对纵向偏置层和一对引线层 。 当从引线层施加检测电流时，自由磁性层的磁化矢量在与第二被钉扎磁性层的磁化矢量交叉的方向上对准，并且第二被钉扎磁性层的磁化矢量倾斜一定角度 θ从轨道宽度方向的法线朝向与纵向偏置磁场相反的方向，以减小输出的不对称性。