公开(公告)号：US20120091413A1

公开(公告)日：2012-04-19

申请号：US12905445

申请日：2010-10-15

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Raghuveer S. Makala

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Raghuveer S. Makala

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/249

摘要： A non-volatile memory device contains a three dimensional stack of horizontal diodes located in a trench in an insulating material, a plurality of storage elements, a plurality of word lines extending substantially vertically, and a plurality of bit lines. Each of the plurality of bit lines has a first portion that extends up along at least one side of the trench and a second portion that extends substantially horizontally through the three dimensional stack of the horizontal diodes. Each of the horizontal diodes is a steering element of a respective non-volatile memory cell of the non-volatile memory device, and each of the plurality of storage elements is located adjacent to a respective steering element.

摘要翻译： 非易失性存储器件包含位于绝缘材料沟槽中的水平二极管的三维堆叠，多个存储元件，基本垂直延伸的多条字线和多个位线。 多个位线中的每一个具有沿着沟槽的至少一侧向上延伸的第一部分和基本水平延伸穿过水平二极管的三维叠层的第二部分。 每个水平二极管是非易失性存储器件的相应非易失性存储单元的转向元件，并且多个存储元件中的每一个位于相应的转向元件附近。

公开(公告)号：US08187932B2

公开(公告)日：2012-05-29

申请号：US12905445

申请日：2010-10-15

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Raghuveer S. Makala

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Raghuveer S. Makala

IPC分类号： H01L21/8234

CPC分类号： H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/249

摘要： A non-volatile memory device contains a three dimensional stack of horizontal diodes located in a trench in an insulating material, a plurality of storage elements, a plurality of word lines extending substantially vertically, and a plurality of bit lines. Each of the plurality of bit lines has a first portion that extends up along at least one side of the trench and a second portion that extends substantially horizontally through the three dimensional stack of the horizontal diodes. Each of the horizontal diodes is a steering element of a respective non-volatile memory cell of the non-volatile memory device, and each of the plurality of storage elements is located adjacent to a respective steering element.

摘要翻译： 非易失性存储器件包含位于绝缘材料沟槽中的水平二极管的三维堆叠，多个存储元件，基本垂直延伸的多条字线和多个位线。 多个位线中的每一个具有沿着沟槽的至少一侧向上延伸的第一部分和基本水平延伸穿过水平二极管的三维叠层的第二部分。 每个水平二极管是非易失性存储器件的相应非易失性存储单元的转向元件，并且多个存储元件中的每一个位于相应的转向元件附近。

公开(公告)号：US07923305B1

公开(公告)日：2011-04-12

申请号：US12686201

申请日：2010-01-12

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen

IPC分类号： H01L21/82

CPC分类号： H01L27/101 ,  H01L21/0337 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/1675

摘要： A method of making a device includes forming a first sacrificial layer over an underlying layer, forming a first photoresist layer over the first sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, etching the first sacrificial layer using both the first and the second photoresist features as a mask to form first sacrificial features, forming a spacer layer over the first sacrificial features, etching the spacer layer to form spacer features and to expose the sacrificial features, removing the first sacrificial features, and etching at least part of the underlying layer using the spacer features as a mask.

摘要翻译： 制造器件的方法包括在下层上形成第一牺牲层，在第一牺牲层上形成第一光致抗蚀剂层，使第一光致抗蚀剂层形成图形以形成第一光致抗蚀剂特征，使第一光致抗蚀剂特征不溶于溶剂，形成 在第一光致抗蚀剂特征上的第二光致抗蚀剂层，图案化第二光致抗蚀剂层以形成第二光致抗蚀剂特征，使用第一和第二光致抗蚀剂特征作为掩模蚀刻第一牺牲层以形成第一牺牲特征， 第一牺牲特征，蚀刻间隔层以形成间隔物特征并暴露牺牲特征，去除第一牺牲特征，以及使用间隔物特征作为掩模来蚀刻至少部分下层。

公开(公告)号：US20110171815A1

公开(公告)日：2011-07-14

申请号：US12686217

申请日：2010-01-12

申请人： Natalie NGUYEN ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie NGUYEN ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/30

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US08329512B2

公开(公告)日：2012-12-11

申请号：US13463260

申请日：2012-05-03

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/82

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US20120276744A1

公开(公告)日：2012-11-01

申请号：US13463260

申请日：2012-05-03

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/302

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US08241969B2

公开(公告)日：2012-08-14

申请号：US13216688

申请日：2011-08-24

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/82

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

公开(公告)号：US20110306174A1

公开(公告)日：2011-12-15

申请号：US13216688

申请日：2011-08-24

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L45/00

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US08026178B2

公开(公告)日：2011-09-27

申请号：US12686217

申请日：2010-01-12

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/311

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US20110014779A1

公开(公告)日：2011-01-20

申请号：US12458543

申请日：2009-07-15

申请人： Raghuveer S. Makala ,  Vance Dunton ,  Yoichiro Tanaka ,  Steven Maxwell ,  Tong Zhang ,  Steven J. Radigan

发明人： Raghuveer S. Makala ,  Vance Dunton ,  Yoichiro Tanaka ,  Steven Maxwell ,  Tong Zhang ,  Steven J. Radigan

IPC分类号： H01L21/20

CPC分类号： H01L27/1021 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/149 ,  H01L45/16

摘要： A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.