公开(公告)号：US07927977B2

公开(公告)日：2011-04-19

申请号：US12458543

申请日：2009-07-15

申请人： Raghuveer S. Makala ,  Vance Dunton ,  Yoichiro Tanaka ,  Steven Maxwell ,  Tong Zhang ,  Steven J. Radigan

发明人： Raghuveer S. Makala ,  Vance Dunton ,  Yoichiro Tanaka ,  Steven Maxwell ,  Tong Zhang ,  Steven J. Radigan

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L27/1021 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/149 ,  H01L45/16

摘要： A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.

摘要翻译： 制造半导体器件的方法包括在下层上形成包括种子材料的第一层，在第一层上形成包含牺牲材料的第二层，牺牲材料与种子材料不同，图案化第一层和 在多个单独的特征之间形成绝缘填充材料，从所述分离的特征中移除所述牺牲材料以在所述绝缘填充材料中形成多个开口，使得所述种子材料暴露在所述第二层中 多个开口，以及在多个开口中的暴露的种子材料上生长半导体材料。

公开(公告)号：US20110014779A1

公开(公告)日：2011-01-20

申请号：US12458543

申请日：2009-07-15

申请人： Raghuveer S. Makala ,  Vance Dunton ,  Yoichiro Tanaka ,  Steven Maxwell ,  Tong Zhang ,  Steven J. Radigan

发明人： Raghuveer S. Makala ,  Vance Dunton ,  Yoichiro Tanaka ,  Steven Maxwell ,  Tong Zhang ,  Steven J. Radigan

IPC分类号： H01L21/20

CPC分类号： H01L27/1021 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/149 ,  H01L45/16

摘要： A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.

公开(公告)号：US08148230B2

公开(公告)日：2012-04-03

申请号：US12656306

申请日：2010-01-25

申请人： Vance Dunton ,  Raghuveer S. Makala ,  Michael Chan

发明人： Vance Dunton ,  Raghuveer S. Makala ,  Michael Chan

IPC分类号： H01L21/20

CPC分类号： H01L27/101 ,  H01L21/32134 ,  H01L27/1021 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/16

摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the first conductivity type semiconductor layer in the plurality of openings, and selectively etching the second conductivity type semiconductor layer using an upper surface of the first conductivity type semiconductor layer as a stop to form a recess in the plurality of openings.

摘要翻译： 制造半导体器件的方法包括提供包含多个开口的绝缘层，在多个开口中形成第一导电类型半导体层，在多个开口中的第一导电类型半导体层上形成第二导电类型半导体层 并且使用第一导电类型半导体层的上表面作为停止来选择性地蚀刻第二导电类型半导体层，以在多个开口中形成凹部。

公开(公告)号：US20110014771A1

公开(公告)日：2011-01-20

申请号：US12656306

申请日：2010-01-25

申请人： Vance Dunton ,  Raghuveer S. Makala ,  Michael Chan

发明人： Vance Dunton ,  Raghuveer S. Makala ,  Michael Chan

IPC分类号： H01L21/822 ,  H01L21/306 ,  H01L21/302 ,  H01L21/20

CPC分类号： H01L27/101 ,  H01L21/32134 ,  H01L27/1021 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/16

摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the first conductivity type semiconductor layer in the plurality of openings, and selectively etching the second conductivity type semiconductor layer using an upper surface of the first conductivity type semiconductor layer as a stop to form a recess in the plurality of openings.

摘要翻译： 制造半导体器件的方法包括提供包含多个开口的绝缘层，在多个开口中形成第一导电类型半导体层，在多个开口中的第一导电类型半导体层上形成第二导电类型半导体层 并且使用第一导电类型半导体层的上表面作为停止来选择性地蚀刻第二导电类型半导体层，以在多个开口中形成凹部。

公开(公告)号：US08329512B2

公开(公告)日：2012-12-11

申请号：US13463260

申请日：2012-05-03

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/82

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US20110171815A1

公开(公告)日：2011-07-14

申请号：US12686217

申请日：2010-01-12

申请人： Natalie NGUYEN ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie NGUYEN ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/30

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US20120276744A1

公开(公告)日：2012-11-01

申请号：US13463260

申请日：2012-05-03

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/302

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US08241969B2

公开(公告)日：2012-08-14

申请号：US13216688

申请日：2011-08-24

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/82

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

公开(公告)号：US20110306174A1

公开(公告)日：2011-12-15

申请号：US13216688

申请日：2011-08-24

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L45/00

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

公开(公告)号：US08026178B2

公开(公告)日：2011-09-27

申请号：US12686217

申请日：2010-01-12

申请人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

发明人： Natalie Nguyen ,  Paul Wai Kie Poon ,  Steven J. Radigan ,  Michael Konevecki ,  Yung-Tin Chen ,  Raghuveer Makala ,  Vance Dunton

IPC分类号： H01L21/311

CPC分类号： H01L21/0274 ,  H01L21/0337 ,  H01L27/1021 ,  Y10S438/947 ,  Y10S438/948 ,  Y10S438/949

摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

摘要翻译： 制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层， 第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除 间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。