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1.发明授权Electron emitting device with projection comprising base portion and electron emission portion 失效具有包括基底部分和电子发射部分的突起的电子发射器件公开(公告)号：US07710013B2
公开(公告)日：2010-05-04
申请号：US11889389
申请日：2007-08-13
CPC分类号： H01J63/02 , H01J1/3044 , H01J1/308
摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.
摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。
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2.发明申请Electron emitting device with projection comprising base portion and electron emission portion 失效具有包括基底部分和电子发射部分的突起的电子发射器件公开(公告)号：US20080042144A1
公开(公告)日：2008-02-21
申请号：US11889389
申请日：2007-08-13
IPC分类号： H01L29/15
CPC分类号： H01J63/02 , H01J1/3044 , H01J1/308
摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.
摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的基板和设置在基板上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。
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3.发明授权Electron emitting device with projection comprising base portion and electron emission portion 失效具有包括基底部分和电子发射部分的突起的电子发射器件公开(公告)号：US07307377B2
公开(公告)日：2007-12-11
申请号：US10952477
申请日：2004-09-29
IPC分类号： H01J1/02
CPC分类号： H01J63/02 , H01J1/3044 , H01J1/308
摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.
摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。
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公开(公告)号：US20050133735A1
公开(公告)日：2005-06-23
申请号：US10952477
申请日：2004-09-29
CPC分类号： H01J63/02 , H01J1/3044 , H01J1/308
摘要： The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.
摘要翻译： 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。
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5.发明授权Process for producing diamond electron emission element and electron emission element 失效制造金刚石电子发射元件和电子发射元件的方法公开(公告)号：US07323812B2
公开(公告)日：2008-01-29
申请号：US10555296
申请日：2004-09-29
IPC分类号： H01J9/30
CPC分类号： H01J1/3044 , H01J1/304 , H01J9/025 , H01J29/04 , H01J2201/30457
摘要： A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si(111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.
摘要翻译： 一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延金刚石的步骤。 衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。 此外，衬底是Si，并且模具的斜率可以是Si（111）面。 金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向 或（110）面和晶界。
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6.发明申请Process for producing diamond electron emission element and electron emission element 失效制造金刚石电子发射元件和电子发射元件的方法公开(公告)号：US20060220514A1
公开(公告)日：2006-10-05
申请号：US10555296
申请日：2004-09-29
IPC分类号： H01J9/00
CPC分类号： H01J1/3044 , H01J1/304 , H01J9/025 , H01J29/04 , H01J2201/30457
摘要： A method for production includes a step for forming concaved molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concaved molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si (111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.
摘要翻译： 一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延的金刚石的步骤。 衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。 此外，衬底是Si，并且模具的斜率可以是Si（111）面。 金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向 或（110）面和晶界。
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7.发明申请公开(公告)号：US20080116446A1
公开(公告)日：2008-05-22
申请号：US11883323
申请日：2006-09-21
CPC分类号： H01J1/3044 , H01J9/025
摘要： An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 μA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.
摘要翻译： 电子发射器件2包括由金刚石制成的电子发射部分6。 在电子发射电流值为10μA以上的情况下，电子发射器件2中电子发射电流值超过1小时的偏差在±20％以内。改变电子发射电流值的阶梯状噪声的发生次数 每10分钟一步或一次。
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公开(公告)号：US20060244352A1
公开(公告)日：2006-11-02
申请号：US10554188
申请日：2004-09-15
IPC分类号： H01J1/00
CPC分类号： H01J1/304 , H01J1/308 , H01J2237/06325 , H01J2237/3175
摘要： An electron emission device which is smaller, able to operate at lower voltage and more efficient than the conventional device is provided. The device contains a light emitting device to irradiate light to a cathode wherein at least an electron emission face of the cathode is made of diamond. By composing the device in such a way, the voltage to draw out electrons can be lowered with a wide margin compared to the conventional device, and thus a small device which can be operated with low voltage may be obtained. The light emitting device can be formed as one unit with the cathode and it can also be that the light emitting device and the electrode are made of diamond. Furthermore, the electron emission face of the cathode is preferably an n- or p-type diamond semiconductor.
摘要翻译： 提供一种较小的电子发射装置，其能够以比常规装置更低的电压工作和更有效率。 该装置包括用于将光照射到阴极的发光装置，其中至少阴极的电子发射面由金刚石制成。 通过以这种方式组装器件，与传统器件相比，可以大幅度地降低引出电子的电压，因此可以获得可以以低电压操作的小器件。 发光器件可以与阴极形成一个单元，并且发光器件和电极也可以由金刚石制成。 此外，阴极的电子发射面优选为n型或p型金刚石半导体。
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9.发明授权公开(公告)号：US07432521B2
公开(公告)日：2008-10-07
申请号：US10526471
申请日：2004-03-05
IPC分类号： H01L29/06
摘要： A logical operation element and logical operation circuit are provided that are capable of high speed and a high degree of integration.A logical operation circuit has a construction wherein, in a logical operation element, the anodes of first and second field emission type microfabricated electron emitters are put at the same potential and two or more signal voltages are input to gate electrodes corresponding to these emitters. A NOR element so arranged that when a high potential input signal is input to either of the two lines, electron emission occurs from the emitters and the potential of said anodes is lowered, and a NAND element wherein the cathodes of the first and second field emission type microfabricated electron emitters are connected in series, two signal voltages are applied to the gate electrodes corresponding to the first and second emitter and the anode potential of the second emitter is lowered when the two input signals are high potential are employed.
摘要翻译： 提供了能够高速度和高集成度的逻辑运算元件和逻辑运算电路。 逻辑运算电路具有这样的结构，其中在逻辑运算元件中，将第一和第二场致发射型微细加电子发射体的阳极置于相同的电位，并将两个或更多个信号电压输入到对应于这些发射极的栅电极。 一种NOR元件，其被布置成当高电位输入信号被输入到两条线中的任一条时，从发射极发生电子发射，并且所述阳极的电位降低;以及NAND元件，其中第一和第二场致发射的阴极 类型的微制造电子发射体串联连接时，两个信号电压施加到对应于第一和第二发射极的栅电极，并且当采用两个输入信号为高电位时，第二发射极的阳极电位降低。
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10.发明授权公开(公告)号：US07902734B2
公开(公告)日：2011-03-08
申请号：US11883323
申请日：2006-09-21
IPC分类号： H01J1/304
CPC分类号： H01J1/3044 , H01J9/025
摘要： An electron emitting device 2 comprises an electron emitting portion 6 made of diamond. At an electron emission current value of 10 μA or more, a deviation of the electron emission current value over one hour is within ±20% in the electron emitting device 2. The number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.
摘要翻译： 电子发射器件2包括由金刚石制成的电子发射部分6。 在电子发射电流值为10μA以上的情况下，电子发射器件2中的电子发射电流值在1小时内的偏差在±20％以内。电子发射电流值变化的阶梯状噪声的发生次数 每10分钟一步或一次。
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