摘要:
A transmission device and method are shown, wherein an amplification is implemented which can be changed between a switched operation mode and linear operation mode as desired, depending on which mode of operation best meets the needs of the radio system in use. This opens the possibility of using the same hardware for different systems.
摘要:
A RF transmitter has at least one amplifier having an input terminal for receiving a phase modulated signal to be transmitted on an RF carrier and an input node for receiving a modulation signal for amplitude modulating the RF carrier. The RF transmitter further includes an amplitude modulator having an output coupled to the input node of the power amplifier through a low-pass filter. The low-pass filter includes at least one variable filter component for varying a bandwidth of the low-pass filter. In a preferred embodiment an envelope elimination and restoration (EER) RF transmitter includes at least one power RF amplifier having the input terminal for receiving the phase modulated signal to be transmitted on the RF carrier, and further including an input power node for receiving a modulated voltage for amplitude modulating the RF carrier. The EER RF transmitter further includes a class-S modulator having a variable bandwidth low-pass filter having an output coupled to the input power node and including at least one first variable capacitance.
摘要:
A method and a device for tuning power amplifier (PA, 203) properties such as back-off. A peak-to-average value (PAR) of the amplifier input signal is first obtained by control means (206) and then used for adjusting the power amplifier (203) with tuning means (204, 208, 210) functionally connected to the amplifier (203). The suggested solution is advantageously exploited in a wireless communications device like a mobile terminal to optimize the performance thereof by, for example, reducing the power dissipation in the transmitter.
摘要:
A mobile telephone including a hearing aid compatible system for coupling an output of the mobile telephone to a hearing aid device of a user; and a metal detector system adapted to detect a metal object brought into proximity relative to the mobile telephone.
摘要:
An RF power amplifier module can be used without a matching device between the power amplifier module and an antenna. The power amplifier module is constructed and operated to detect, protect and maintain the performance of the power amplifier in the presence of severe VSWR load mismatches, without requiring the use of external circuitry. The RF power amplifier module includes integral detection circuitry for generating a first detection signal having a value that is indicative of the current flowing through an output power transistor and a second detection signal having a value that is indicative the voltage appearing at the output of the output power transistor, as well as integral compensation circuitry for controlling the generation of a plurality of bias current and bias voltage signals to have values that are a function of the values of the first and second detection signals, as well as the current output power level of the RF power amplifier module. Also included is an integral impedance matching circuit, coupled between the output of the output transistor and the output node, that provides a variable impedance that is selectively controlled by an output signal from the compensation circuitry.
摘要:
A method for managing transmission conditions in a mobile telecommunication system according to movement of a mobile terminal is provided. The mobile terminal is having a communication link with a base station. The movement of the mobile terminal is monitored, and then a database is checked for the most optimal transmission conditions for the monitored movement of the mobile terminal, and action is taken to change the transmission conditions of the communication link upon detecting, in the database, transmission conditions providing a more optimal communication link for the current movement of the mobile terminal than the transmission conditions currently being used for the communication link.
摘要:
An RF power amplifier module can be used without a matching device between the power amplifier module and an antenna. The power amplifier module is constructed and operated to detect, protect and maintain the performance of the power amplifier in the presence of severe VSWR load mismatches, without requiring the use of external circuitry. The RF power amplifier module includes integral detection circuitry for generating a first detection signal having a value that is indicative of the current flowing through an output power transistor and a second detection signal having a value that is indicative the voltage appearing at the output of the output power transistor, as well as integral compensation circuitry for controlling the generation of a plurality of bias current and bias voltage signals to have values that are a function of the values of the first and second detection signals, as well as the current output power level of the RF power amplifier module. Also included is an integral impedance matching circuit, coupled between the output of the output transistor and the output node, that provides a variable impedance that is selectively controlled by an output signal from the compensation circuitry.
摘要:
A radio frequency amplifier having a power transistor (Q1) to the base of which is coupled a radio frequency signal to be amplified. An amplified radio frequency signal is provided at the collector of the power transistor (Q1). A control transistor (Qc) has its base coupled to the base of the power transistor (Q1) while a driver transistor (Q2) provides a control bias signal to the bases of the control and power transistors. A differential amplifier (Qd1, Qd2) has a first input coupled to an input bias signal and an output coupled to the base of the driver transistor (Q2). The collector of the control transistor (Qc) is coupled to a second input of the differential amplifier to provide a negative feedback signal to the differential amplifier and the driver transistor (Q2) and thereby to stabilise the operating point of the power transistor (Q1).