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18 条记录 (耗时 0.025 秒)

    Electrical energy generation device
    4.
    发明授权
    Electrical energy generation device 有权
    电能发电装置

    公开(公告)号：US08693165B2

    公开(公告)日：2014-04-08

    申请号：US13332124

    申请日：2011-12-20

    申请人： Thomas Skotnicki ,  Stéphane Monfray

    发明人： Thomas Skotnicki ,  Stéphane Monfray

    IPC分类号： H01G4/38 ,  H01G9/00 ,  H01G2/08

    CPC分类号： H01G9/0003 ,  H01G2/08 ,  H01G9/155 ,  H01L37/02

    摘要： A device for generating electrical energy from the heat dissipated by a heat source, comprising: a capacitor comprising two electrodes between which a ferroelectric material is present, said capacitor being arranged so as to be positioned to capture all or part of the heat dissipated by said heat source; a capacitive element a first electrode of which is connected to a first electrode of said capacitor; a recovery circuit interposed between the second electrode of said capacitor and the second electrode of the capacitive element, and able to have the current flowing between said second electrodes pass through it. a mechanism adapted to move the capacitor with respect to the heat source, said mechanism having at least one arm able to move between two positions, the capacitor being closer to the heat source in one of the two positions.

    摘要翻译： 一种用于从由热源消散的热量产生电能的装置，包括：电容器，包括两个电极，所述两个电极之间存在铁电材料，所述电容器被布置成被定位成捕获由所述 热源; 电容元件，其第一电极连接到所述电容器的第一电极; 插入在所述电容器的第二电极和电容元件的第二电极之间并且能够使在所述第二电极之间流动的电流通过其的恢复电路。 适于相对于所述热源移动所述电容器的机构，所述机构具有能够在两个位置之间移动的至少一个臂，所述电容器在所述两个位置中的一个位置更靠近所述热源。

    ELECTRICAL ENERGY GENERATION DEVICE
    5.
    发明申请
    ELECTRICAL ENERGY GENERATION DEVICE 有权
    电能发电装置

    公开(公告)号：US20120153905A1

    公开(公告)日：2012-06-21

    申请号：US13332124

    申请日：2011-12-20

    申请人： Thomas Skotnicki ,  Stéphane Monfray

    发明人： Thomas Skotnicki ,  Stéphane Monfray

    IPC分类号： H02N1/00

    CPC分类号： H01G9/0003 ,  H01G2/08 ,  H01G9/155 ,  H01L37/02

    摘要： A device for generating electrical energy from the heat dissipated by a heat source, comprising: a capacitor comprising two electrodes between which a ferroelectric material is present, said capacitor being arranged so as to be positioned to capture all or part of the heat dissipated by said heat source; a capacitive element a first electrode of which is connected to a first electrode of said capacitor; a recovery circuit interposed between the second electrode of said capacitor and the second electrode of the capacitive element, and able to have the current flowing between said second electrodes pass through it. a mechanism adapted to move the capacitor with respect to the heat source, said mechanism having at least one arm able to move between two positions, the capacitor being closer to the heat source in one of the two positions.

    摘要翻译： 一种用于从由热源消散的热量产生电能的装置，包括：电容器，包括两个电极，所述两个电极之间存在铁电材料，所述电容器被布置成被定位成捕获由所述 热源; 电容元件，其第一电极连接到所述电容器的第一电极; 插入在所述电容器的第二电极和电容元件的第二电极之间并且能够使在所述第二电极之间流动的电流通过其的恢复电路。 适于相对于所述热源移动所述电容器的机构，所述机构具有能够在两个位置之间移动的至少一个臂，所述电容器在所述两个位置中的一个位置更靠近所述热源。

    METHOD FOR MANUFACTURING A SUSPENDED MEMBRANE AND DUAL-GATE MOS TRANSISTOR
    6.
    发明申请
    METHOD FOR MANUFACTURING A SUSPENDED MEMBRANE AND DUAL-GATE MOS TRANSISTOR 有权
    制造悬浮膜和双栅极MOS晶体管的方法

    公开(公告)号：US20110121391A1

    公开(公告)日：2011-05-26

    申请号：US12949286

    申请日：2010-11-18

    申请人： Stéphane Monfray ,  Thomas Skotnicki

    发明人： Stéphane Monfray ,  Thomas Skotnicki

    IPC分类号： H01L29/786 ,  H01L21/762

    CPC分类号： H01L29/786 ,  H01L29/78648

    摘要： A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring.

    摘要翻译： 一种用于制造单晶半导体衬底中的悬浮膜的方法，包括以下步骤：在衬底中形成限定有源区的绝缘环，从有源区去除材料，在有源区中依次形成第一和第二 层，所述第二层是单晶半导体层，将所述环的内周的一部分蚀刻到大于所述第二层的厚度的深度，去除所述第一层，使得所述第二层形成悬浮膜 在绝缘环中。

    Process for fabricating a heterostructure-channel insulated-gate field-effect transistor, and the corresponding transistor
    7.
    发明授权
    Process for fabricating a heterostructure-channel insulated-gate field-effect transistor, and the corresponding transistor 有权
    用于制造异质结构通道绝缘栅场效应晶体管的工艺及相应的晶体管

    公开(公告)号：US07436005B2

    公开(公告)日：2008-10-14

    申请号：US11227681

    申请日：2005-09-15

    申请人： Stéphane Monfray ,  Stéphan Borel ,  Thomas Skotnicki

    发明人： Stéphane Monfray ,  Stéphan Borel ,  Thomas Skotnicki

    IPC分类号： H01L29/94

    CPC分类号： H01L29/1054 ,  H01L29/0649 ,  H01L29/66651 ,  H01L29/78654 ,  H01L29/78687

    摘要： The insulated-gate field-effect transistor includes a substrate surmounted by a layer of silicon-germanium alloy, the ratio of the germanium concentration to the silicon concentration of which increases towards the surface of the substrate. The transistor is formed on the active zone in the silicon-germanium alloy layer and lies between two isolating zones. The transistor includes a narrow heterostructure strained-semiconductor channel including a SiGe alloy layer in compression and a silicon layer in tension, extending between the gate and a dielectric block buried in the substrate.

    摘要翻译： 绝缘栅场效应晶体管包括由硅 - 锗合金层覆盖的衬底，其锗浓度与硅浓度之比朝衬底表面增加。 晶体管形成在硅 - 锗合金层的有源区上，位于两个隔离区之间。 晶体管包括窄压电晶体半导体通道，其包括压缩的SiGe合金层和张力的硅层，其在栅极和掩埋在衬底中的介质块之间延伸。

    DRAM cell with high integration density
    10.
    发明授权
    DRAM cell with high integration density 有权
    高集成度的DRAM单元

    公开(公告)号：US06534811B2

    公开(公告)日：2003-03-18

    申请号：US10042506

    申请日：2002-01-09

    申请人： Thomas Skotnicki ,  Stéphane Monfray ,  Catherine Mallardeau

    发明人： Thomas Skotnicki ,  Stéphane Monfray ,  Catherine Mallardeau

    IPC分类号： H01L27108

    CPC分类号： H01L27/1087 ,  H01L27/10832

    摘要： A process for making a DRAM-type cell includes growing layers of silicon germanium and layers of silicon, by epitaxy from a silicon substrate; superposing a first layer of N+ doped silicon and a second layer of P doped silicon; and forming a transistor on the silicon substrate. The method also includes etching a trench in the extension of the transistor to provide an access to the silicon germanium layers relative to the silicon layers over a pre-set depth to form lateral cavities, and forming a capacitor in the trench and in the lateral cavities.

    摘要翻译： 通过从硅衬底外延生长制造DRAM型电池的工艺包括生长硅锗层和硅层; 叠加第一层N +掺杂硅和第二层P掺杂硅; 以及在硅衬底上形成晶体管。 该方法还包括蚀刻晶体管的延伸中的沟槽，以提供在预定深度上相对于硅层访问硅锗层以形成横向空腔，以及在沟槽和侧向空腔中形成电容器 。