Cathode ray tube
    1.
    发明授权
    Cathode ray tube 失效
    阴极射线管

    公开(公告)号:US06703776B1

    公开(公告)日:2004-03-09

    申请号:US09671986

    申请日:2000-09-28

    IPC分类号: H01J2946

    CPC分类号: H01J29/481 H01J3/021

    摘要: A cathode ray tube comprising an electron source and an electron beam guidance cavity having an input aperture and an output aperture, wherein at least a part of the wall of the electron beam guidance cavity near the output aperture comprises an insulating material having a secondary emission coefficient &dgr;1 for cooperation with the cathode. Furthermore, the cathode ray tube comprises a first electrode which is connectable to a first power supply for applying, in operation, an electric field with a first field strength E1 between the cathode and the output aperture. &dgr;1 and E1 have values which allow electron transport through the electron beam guidance cavity. The cathode ray tube further comprises a conventional main lens to obtain a spot on a display screen. According to the invention, an electron lens is placed between the exit of the cavity and the main lens for directing the electron beam at a predetermined angle towards the entrance of the main lens.

    摘要翻译: 一种阴极射线管,包括电子源和具有输入孔和输出孔的电子束引导腔,其中电子束引导腔的靠近输出孔的壁的至少一部分包括具有二次发射系数的绝缘材料 delta1与阴极配合使用。 此外,阴极射线管包括可连接到第一电源的第一电极,用于在操作中施加在阴极和输出孔之间具有第一场强E1的电场。 δ1和E1具有允许电子传输通过电子束引导腔的值。 阴极射线管还包括常规的主透镜,以在显示屏上获得斑点。 根据本发明,电子透镜放置在空腔的出口和主透镜之间,用于将电子束以预定角度引导到主透镜的入口。

    Beam-induced deposition at cryogenic temperatures
    2.
    发明授权
    Beam-induced deposition at cryogenic temperatures 有权
    在低温下的光束沉积

    公开(公告)号:US08796646B2

    公开(公告)日:2014-08-05

    申请号:US13172596

    申请日:2011-06-29

    IPC分类号: H01J37/30

    摘要: A method of depositing material onto a substrate at cryogenic temperatures using beam-induced deposition. A precursor gas is chosen from a group of compounds having a melting point that is lower than the cryogenic temperature of the substrate. Preferably the precursor gas is chosen from a group of compounds having a sticking coefficient that is between 0.5 and 0.8 at the desired cryogenic temperature. This will result in the precursor gas reaching equilibrium between precursor molecules adsorbed onto the substrate surface and precursor gas molecules desorbing from the substrate surface at the desired cryogenic temperature. Suitable precursor gases can comprise alkanes, alkenes, or alkynes. At a cryogenic temperature of between −50° C. and −85° C., hexane can be used as a precursor gas to deposit material; at a cryogenic temperature of between −50° C. and −180° C., propane can be used as a precursor gas.

    摘要翻译: 使用光束诱导沉积在低温下将材料沉积到衬底上的方法。 前体气体选自熔点低于基底的低温温度的一组化合物。 优选地,前体气体选自具有在期望的低温温度下在0.5和0.8之间的粘附系数的一组化合物。 这将导致前体气体在预期的低温下吸附到衬底表面上的前体分子和从衬底表面解吸的前体气体分子达到平衡。 合适的前体气体可以包括烷烃,烯烃或炔烃。 在-50℃至-85℃之间的低温温度下,可以使用己烷作为前体气体沉积材料; 在-50℃至-180℃的低温温度下,丙烷可用作前体气体。

    Beam-Induced Deposition at Cryogenic Temperatures
    3.
    发明申请
    Beam-Induced Deposition at Cryogenic Temperatures 有权
    光诱导沉积在低温温度

    公开(公告)号:US20120003394A1

    公开(公告)日:2012-01-05

    申请号:US13172596

    申请日:2011-06-29

    IPC分类号: B05D3/06

    摘要: A method of depositing material onto a substrate at cryogenic temperatures using beam-induced deposition. A precursor gas is chosen from a group of compounds having a melting point that is lower than the cryogenic temperature of the substrate. Preferably the precursor gas is chosen from a group of compounds having a sticking coefficient that is between 0.5 and 0.8 at the desired cryogenic temperature. This will result in the precursor gas reaching equilibrium between precursor molecules adsorbed onto the substrate surface and precursor gas molecules desorbing from the substrate surface at the desired cryogenic temperature. Suitable precursor gases can comprise alkanes, alkenes, or alkynes. At a cryogenic temperature of between −50° C. and −85° C., hexane can be used as a precursor gas to deposit material; at a cryogenic temperature of between −50° C. and −180° C., propane can be used as a precursor gas.

    摘要翻译: 使用光束诱导沉积在低温下将材料沉积到衬底上的方法。 前体气体选自熔点低于基底的低温温度的一组化合物。 优选地,前体气体选自具有在期望的低温温度下在0.5和0.8之间的粘附系数的一组化合物。 这将导致前体气体在预期的低温下吸附到衬底表面上的前体分子和从衬底表面解吸的前体气体分子达到平衡。 合适的前体气体可以包括烷烃,烯烃或炔烃。 在-50℃至-85℃之间的低温温度下,可以使用己烷作为前体气体沉积材料; 在-50℃至-180℃的低温温度下,丙烷可用作前体气体。

    Particle optical apparatus
    5.
    发明授权
    Particle optical apparatus 有权
    粒子光学仪器

    公开(公告)号:US06462332B1

    公开(公告)日:2002-10-08

    申请号:US09689059

    申请日:2000-10-12

    IPC分类号: H01S100

    摘要: A particle optical apparatus, such as an ion implantation apparatus, an Auger electron spectrometer, an XPS analysis apparatus, and the like, is provided with a radiation source by means of which a wafer or substrate brought into the apparatus can be bombarded by radiation providing for at least a positively charged surface layer of the wafer or substrate. The apparatus further comprises a charge neutralization device with means for providing secondary electron emission and transport means for transporting secondary electrons. This transport means device is provided with a hollow insulating structure for controlled electron transport based on secondary electron emission, particularly in the form of an electron fibre with electrodes at the entrance and exit. The exit of the electron fibre forms a clean secondary electron source.

    摘要翻译: 诸如离子注入装置,俄歇电子能谱仪,XPS分析装置等的粒子光学装置设置有辐射源,通过该辐射源,被带入设备中的晶片或衬底可以被辐射提供 用于晶片或衬底的至少带正电的表面层。 该装置还包括具有用于提供用于传输二次电子的二次电子发射和传输装置的装置的电荷中和装置。 该输送装置具有中空绝缘结构,用于基于二次电子发射的受控电子传输,特别是具有在入口和出口处具有电极的电子束的形式。 电子束的出口形成清洁的二次电子源。