公开(公告)号：US20010010362A1

公开(公告)日：2001-08-02

申请号：US09765530

申请日：2001-01-19

Applicant: Nikon Corporation

Inventor： Hiroyasu Simizu

IPC: G21K001/08 ,  H01J003/14 ,  H01J003/26 ,  H01J049/42

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/08 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/30472 ,  H01J2237/31757

Abstract: Methods and devices are disclosed for aligning a beam-propagation axis with the center of an aperture, especially an aperture configured to limit the aperture angle of the charged particle beam. In an exemplary method, an alignment-measurement aperture is provided at an imaging plane of a charged-particle-beam (CPB) optical system, and a beam detector is downstream of the alignment-measurement aperture. A scanning deflector is energized to cause the beam to be scanned in two dimensions, transverse to an optical axis, over the aperture. Meanwhile, the beam detector obtains an image of beam intensity in the two dimensions. In the image a maximum-intensity point is identified, corresponding to the propagation axis. Based on the two-dimensional image, the beam is deflected as required to align the propagation axis with the aperture center.

Abstract translation: 公开了用于将光束传播轴与孔的中心对准的方法和装置，特别是被配置为限制带电粒子束的孔径角的孔。 在示例性方法中，在带电粒子束（CPB）光学系统的成像平面处提供对准测量孔，并且光束检测器位于对准测量孔径的下游。 扫描偏转器被通电以使光束在光轴上横向于光轴的二维扫描。 同时，光束检测器获得二维光束强度的图像。 在图像中，识别出与传播轴对应的最大强度点。 基于二维图像，根据需要将光束偏转以将传播轴与孔径中心对准。

公开(公告)号：US20020153494A1

公开(公告)日：2002-10-24

申请号：US10126995

申请日：2002-04-19

Applicant: Nikon Corporation

Inventor： Hiroyasu Simizu

IPC: H01J037/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3177

Abstract: Charged-particle-beam (CPB) microlithography apparatus and methods are disclosed that produce reduced blur resulting from the Coulomb effect, without having to reduce exposure current, exposure accuracy, or throughput. An exemplary apparatus is configured to expose regions (nullexposure unitsnull or nullsubfieldsnull) each having a maximal lateral dimension of at least 1 mm. The beam half-angle (half width at half maximum of the distribution of beam intensity) is 1 mrad or less.

Abstract translation: 公开了充电粒子束（CPB）微光刻设备和方法，其产生由库仑效应引起的模糊，而不必降低曝光电流，曝光精度或通量。 示例性设备被配置为暴露每个具有至少1mm的最大横向尺寸的区域（“曝光单元”或“子场”）。 光束半角（光束强度分布的半值宽度）为1mrad或更小。

公开(公告)号：US20030059716A1

公开(公告)日：2003-03-27

申请号：US10251571

申请日：2002-09-20

Applicant: Nikon Corporation

Inventor： Hiroyasu Simizu

IPC: G03C005/00 ,  A61N005/00 ,  G21G005/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2037 ,  H01J37/3174 ,  H01J2237/31796 ,  Y10S430/143

Abstract: Exposure methods are disclosed for use in charged-particle-beam microlithography and that yield decreased blur and variation in blur within individual exposure fields (subfields) of a pattern. Blur at a location on the optical axis increases monotonically with increased shift in the focal point of a subfield image on the substrate. In contrast, blur at a subfield edge exhibits comparatively little change over a limited range in focal-point shift, and exhibits sharply increased change as the shift in focal point exceeds a threshold. Variation in blur within individual subfields decreases monotonically with increased shift in the focal point. Consequently, by changing the focal point during exposure, within a range in which maximum blur within the subfield is within an acceptable range, nullblur is decreased more than conventionally, thereby increasing the uniformity of blur within the projected subfield.

Abstract translation: 公开了用于带电粒子束微光刻中的曝光方法，并且在图案的单独曝光场（子场）内产生模糊和模糊变化。 在光轴上的位置处的模糊随着衬底上的子场图像的焦点位移的增加而单调增加。 相比之下，在子场边缘处的模糊在焦点偏移的有限范围内显示出相对较小的变化，并且随着焦点偏移超过阈值，显示出急剧增加的变化。 单个子场中模糊的变化随着焦点的偏移增加而逐渐减小。 因此，通过在曝光期间改变焦点，在子场内的最大模糊处于可接受范围内的范围内，DELTAblur比常规下降得更多，从而增加了投影子场内的模糊均匀性。

公开(公告)号：US20020008209A1

公开(公告)日：2002-01-24

申请号：US09901766

申请日：2001-07-09

Applicant: Nikon Corporation

Inventor： Hiroyasu Simizu

IPC: H01J027/00

CPC classification number: H01J37/063 ,  H01J2237/153 ,  H01J2237/3175

Abstract: Electron-beam sources are disclosed that exhibit substantially reduced spherical aberration compared to conventional sources. In a beam produced by the cathode of such a source, axially propagating electrons are subjected to a lens action by voltage applied to a Wehnelt electrode and an extraction electrode. The cathode includes a peripheral portion that is nulldrawn backnull (displaced along the axis of the source away from the beam-propagation direction) relative to a center portion of the cathode. With such a cathode, the percentage of dimensions of the crossover involved in spherical aberration of the crossover is reduced. This improves the uniformity of beam current at a lithographic substrate and minimizes location-dependency of the aperture angle. Since the Wehnelt voltage can be reduced, positional changes in the electrical field at the cathode surface are reduced, and the distribution of electrons in the beam propagating from the cathode surface is made more uniform than conventionally.

Abstract translation: 公开了与常规源相比显示出显着降低的球面像差的电子束源。 在由这种源的阴极产生的光束中，轴向传播的电子通过施加到Wehnelt电极和引出电极的电压进行透镜作用。 阴极包括相对于阴极的中心部分被“拉回”（沿源于远离光束传播方向的光轴移动）的周边部分。 对于这样的阴极，交叉点的球面像差所涉及的交叉点的尺寸的百分比减小。 这改善了光刻基片上的束流的均匀性，并使孔径角的位置依赖性最小化。 由于可以减小Wehnelt电压，阴极表面的电场的位置变化减小，并且从阴极表面传播的光束中的电子分布比以往更均匀。

公开(公告)号：US20010038080A1

公开(公告)日：2001-11-08

申请号：US09843592

申请日：2001-04-26

Applicant: Nikon Corporation

Inventor： Atsushi Yamada ,  Hiroyasu Simizu ,  Koichi Kamijo

IPC: G21G005/00 ,  A61N005/00

CPC classification number: G21K1/093

Abstract: Charged-particle-beam (CPB) optical systems (especially projection-lens systems for use in CPB microlithography apparatus) are disclosed that exhibit excellent control of geometric aberration and the Coulomb effect while exhibiting low combined aberration and blur. As the column length of the projection-lens system is increased, geometric aberration is reduced but the Coulomb effect increases, which degrades overall optical characteristics. Conversely, as the column length is decreased, the Coulomb effect is reduced but geometric aberration increases, which degrades overall optical characteristics. Hence, the projection-lens system, exhibiting a magnification of 1/M and having a column length (distance in mm between reticle and wafer) of 250nullM0.63null110% (wherein 0

Abstract translation: 公开了带电粒子束（CPB）光学系统（特别是用于CPB微光刻设备的投影透镜系统），其表现出优异的几何像差控制和库仑效应，同时呈现低的组合像差和模糊。 随着投影透镜系统的列长度增加，几何像差减小，但是库仑效应增加，这降低了总的光学特性。 相反，当柱长度减小时，库仑效应降低，但是几何像差增加，这降低了整体光学特性。 因此，投影透镜系统呈现出1 / M的放大率，并且具有250×M0.63±110％（其中0