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    Semiconductor laser device
    6.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5282218A

    公开(公告)日：1994-01-25

    申请号：US896536

    申请日：1992-06-09

    申请人： Masaki Okajima ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Kazuhiko Itaya

    发明人： Masaki Okajima ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Kazuhiko Itaya

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/32 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/32325

    摘要： A semiconductor laser device for radiating a laser beam from a double heterostructure section in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer with a first lattice constant which is 0.5% to 2.0% larger than the lattice constant of the substrate in the double heterostructure section for radiating the laser beam, a lattice mismatched cladding layer with a second lattice constant which is 0.2% to 2.0% smaller than the lattice constant of the substrate for confining the injected carriers in the active layer, and a cladding layer for confining the injected carriers in the active layer by co-operating with the lattice mismatched cladding layer.

    摘要翻译： 一种半导体激光器件，用于从双异质结部分发射激光束，其中具有激光束能量源的注入载流子被限制在一起，由具有用于加载双异质结部分的规定晶格常数的化合物半导体衬底，晶格失配的有源 层，其具有比用于照射激光的双异质结部分中的衬底的晶格常数大0.5％至2.0％的第一晶格常数，具有小于0.2％至2.0％的第二晶格常数的晶格失配覆层 比用于将注入的载流子限制在有源层中的基板的晶格常数以及用于通过与晶格失配包层合作来限制注入的载流子在有源层中的包覆层。

    Semiconductor light-emitting device with compound semiconductor layer
    7.
    发明授权
    Semiconductor light-emitting device with compound semiconductor layer 失效
    具有化合物半导体层的半导体发光器件

    公开(公告)号：US5488233A

    公开(公告)日：1996-01-30

    申请号：US208850

    申请日：1994-03-11

    申请人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

    发明人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/20 ,  H01S5/223 ,  H01S5/30 ,  H01S5/347

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01S5/347 ,  H01S5/209 ,  H01S5/2238 ,  H01S5/3077

    摘要： This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.

    摘要翻译： 本发明提供了一种半导体发光器件，其包括由周期表的第三和第五组中的元件的化合物半导体构成的半导体衬底，直接形成在半导体衬底的至少一部分上并由 至少含有In和P的化合物半导体和直接形成在第一化合物半导体层上并由元素周期表的第二和第六组元素的化合物半导体构成的第二化合物半导体。 通过这种布置，可以充分地防止半导体衬底与由周期表的第二组和第六组中的元件的化合物半导体组成的第二化合物半导体层之间的界面中的缺陷的发生。

    Method of manufacturing a semiconductor laser device
    9.
    发明授权
    Method of manufacturing a semiconductor laser device 失效
    制造半导体激光器件的方法

    公开(公告)号：US4987097A

    公开(公告)日：1991-01-22

    申请号：US486397

    申请日：1990-02-28

    申请人： Koichi Nitta ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Yasuhiko Tsuburai ,  Yoshihiro Kokubun

    发明人： Koichi Nitta ,  Yukie Nishikawa ,  Masayuki Ishikawa ,  Yasuhiko Tsuburai ,  Yoshihiro Kokubun

    IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

    CPC分类号： H01L33/0062 ,  H01S5/20 ,  H01S5/2231 ,  H01S5/2059 ,  H01S5/321 ,  H01S5/32325 ,  Y10S148/095 ,  Y10S148/157

    摘要： A gain waveguide type semiconductor laser oscillating visible light has an N type GaAs substrate of, and a double-heterostructure provided above the substrate to include an InGaP active layer, and first and second cladding layers sandwiching the active layer. The first cladding layer consists of N type InGaAlP, whereas the second cladding layer consists of P type InGaAlP. A P type InGaP layer is formed as an intermediate band-gap layer on the second cladding layer. An N type GaAs current-blocking layer is formed on the intermediate band-gap layer, and has an elongated waveguide opening. A P type GaAs contact layer is formed to cover the current-blocking layer and the opening. The intermediate band-gap layer has a carrier concentration, in a layer portion being in contact with the opening, high enough to cause a current injected in the oscillation mode to concentrate on the layer portion and has a carrier density, in the remaining layer portion, low enough to suppress or prevent the injected current from spreading thereinto. The layer portion may be formed by additionally doping a selected impurity into the intermediate gap layer by using a presently available impurity diffusion/injection technique.

    Compound semiconductor device with nitride
    10.
    发明授权
    Compound semiconductor device with nitride 失效
    具有氮化物的化合物半导体器件

    公开(公告)号：US5693963A

    公开(公告)日：1997-12-02

    申请号：US526700

    申请日：1995-09-11

    申请人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

    发明人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

    IPC分类号： H01L33/00 ,  H01L33/32

    CPC分类号： H01L33/325 ,  H01L33/007

    摘要： A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

    摘要翻译： 发光二极管布置在蓝宝石衬底上。 发光二极管包括以这种顺序气相生长生长的n-GaN层，n-InGaN发光层，p-AlGaN层和P-GaN层。 在p-GaN层和p-AlGaN层内，分别含有1×10 20 cm -3的Mg和2×10 19 cm -3的Mg。 在n-GaN层和n-InGaN发光层的每一个中，含有5×10 18 cm -3的氢，从而防止Mg从p-GaN层和p-AlGaN层扩散。