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    Semiconductor laser device
    2.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5282218A

    公开(公告)日：1994-01-25

    申请号：US896536

    申请日：1992-06-09

    申请人： Masaki Okajima ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Kazuhiko Itaya

    发明人： Masaki Okajima ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Kazuhiko Itaya

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/32 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/32325

    摘要： A semiconductor laser device for radiating a laser beam from a double heterostructure section in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer with a first lattice constant which is 0.5% to 2.0% larger than the lattice constant of the substrate in the double heterostructure section for radiating the laser beam, a lattice mismatched cladding layer with a second lattice constant which is 0.2% to 2.0% smaller than the lattice constant of the substrate for confining the injected carriers in the active layer, and a cladding layer for confining the injected carriers in the active layer by co-operating with the lattice mismatched cladding layer.

    摘要翻译： 一种半导体激光器件，用于从双异质结部分发射激光束，其中具有激光束能量源的注入载流子被限制在一起，由具有用于加载双异质结部分的规定晶格常数的化合物半导体衬底，晶格失配的有源 层，其具有比用于照射激光的双异质结部分中的衬底的晶格常数大0.5％至2.0％的第一晶格常数，具有小于0.2％至2.0％的第二晶格常数的晶格失配覆层 比用于将注入的载流子限制在有源层中的基板的晶格常数以及用于通过与晶格失配包层合作来限制注入的载流子在有源层中的包覆层。

    Semiconductor light-emitting device with compound semiconductor layer
    7.
    发明授权
    Semiconductor light-emitting device with compound semiconductor layer 失效
    具有化合物半导体层的半导体发光器件

    公开(公告)号：US5488233A

    公开(公告)日：1996-01-30

    申请号：US208850

    申请日：1994-03-11

    申请人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

    发明人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

    IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/20 ,  H01S5/223 ,  H01S5/30 ,  H01S5/347

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01S5/347 ,  H01S5/209 ,  H01S5/2238 ,  H01S5/3077

    摘要： This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.

    摘要翻译： 本发明提供了一种半导体发光器件，其包括由周期表的第三和第五组中的元件的化合物半导体构成的半导体衬底，直接形成在半导体衬底的至少一部分上并由 至少含有In和P的化合物半导体和直接形成在第一化合物半导体层上并由元素周期表的第二和第六组元素的化合物半导体构成的第二化合物半导体。 通过这种布置，可以充分地防止半导体衬底与由周期表的第二组和第六组中的元件的化合物半导体组成的第二化合物半导体层之间的界面中的缺陷的发生。