摘要:
The influenced of condensed water on an EGR device is alleviated. A device (100) that controls a cooling system including adjusting means for being able to adjust a circulation amount of coolant in a first flow passage, including an engine cooling flow passage, an EGR cooling flow passage and a radiator flow passage, and a second flow passage, including the engine cooling flow passage, the EGR cooling flow passage and a bypass flow passage and not including the radiator flow passage, includes: measuring means for measuring a temperature of the coolant; limiting means for limiting circulation of the coolant at starting an internal combustion engine; and control means for circulating the coolant preferentially through the second flow passage via control over the adjusting means based on the measured temperature in a period in which circulation of the coolant is limited.
摘要:
The influenced of condensed water on an EGR device is alleviated.A device (100) that controls a cooling system including adjusting means for being able to adjust a circulation amount of coolant in a first flow passage, including an engine cooling flow passage, an EGR cooling flow passage and a radiator flow passage, and a second flow passage, including the engine cooling flow passage, the EGR cooling flow passage and a bypass flow passage and not including the radiator flow passage, includes: measuring means for measuring a temperature of the coolant; limiting means for limiting circulation of the coolant at starting an internal combustion engine; and control means for circulating the coolant preferentially through the second flow passage via control over the adjusting means based on the Measured temperature in a period in which circulation of the coolant is limited.
摘要:
A flow control valve includes a housing that includes a fluid inlet and a fluid outlet; a valve body that together with the housing, forms a first chamber with a variable volume and a second chamber with a variable volume; a communication passage that connects the first chamber and the second chamber together; and an urging portion that urges the valve body in a direction in which the volume of the first chamber decreases. When the valve body moves in a direction to increase the volume of the first chamber against urging force of the urging portion, the valve body moves closer to the fluid outlet and reduces a degree to which the second chamber is communicated with the fluid outlet.
摘要:
Provided is a method for easily manufacturing large volumes of a metallic glass nanowire with an extremely small diameter. This metallic glass nanowire manufacturing method is characterized in that a melted metallic glass or a master alloy thereof is gas-atomized in a supercooled state.
摘要:
Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.
摘要:
In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.
摘要:
A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.
摘要:
There is disclosed an inkjet recording apparatus including a feeding device, a remover, and an inkjet head. The feeding device feeds a recording medium along a feed path passing through a removing area. A part of an opposingly-feeding surface extends opposed to the ink jet head and along the feed path, and the removing area is located under the opposingly-feeding surface and within the opposingly-feeding surface as seen in a vertical direction. The remover removes foreign matter from a surface of the recording medium during the recording medium is fed through the removing area by the feeding device. The inkjet head is disposed downstream of the remover with respect to a feeding direction in which the recording medium is fed. The inkjet head has an ink ejection surface in which a nozzle is open, and an ink droplet is ejected from the nozzle toward a recording surface of the recording medium while the recording medium is fed along at least a part of the opposingly-feeding surface.
摘要:
With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.
摘要:
With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.