Method of manufacturing a photovoltaic device
    1.
    发明授权
    Method of manufacturing a photovoltaic device 失效
    制造光伏器件的方法

    公开(公告)号:US06365431B1

    公开(公告)日:2002-04-02

    申请号:US09722736

    申请日:2000-11-28

    IPC分类号: H01L2100

    摘要: This invention manufactures a photovoltaic device by the following process steps: a step to form a first electrode layer and a light-active semiconductor layer on an insulating surface of the substrate; a step to form a transparent conducting film over most of the insulating surface including the light-active semiconductor layer; a step to establish a patterned transparent protective layer on the transparent conducting film over power generating regions; and a step to irradiate ultraviolet laser light over most of the substrate to remove exposed portions of the transparent conducting film not masked by the pattered transparent protective layer and form a transparent conducting layer corresponding to the pattered transparent protective layer. The patterned transparent protective layer serves a dual purpose as masking material for removing the specified areas of the transparent conducting film by ultraviolet laser and as a transparent protective layer. Accordingly, material that is passed by visible light but not passed by ultraviolet light is used as the patterned transparent protective layer.

    摘要翻译: 本发明通过以下工艺步骤制造光伏器件:在衬底的绝缘表面上形成第一电极层和光活性半导体层的步骤; 在包括所述光活性半导体层的所述绝缘表面的大部分上形成透明导电膜的步骤; 在发光区域上的透明导电膜上形成图案化的透明保护层的步骤; 以及在大部分基板上照射紫外线激光的步骤,以去除未被图案透明保护层未掩蔽的透明导电膜的暴露部分,并形成对应于图案化的透明保护层的透明导电层。 图案化的透明保护层用作用于通过紫外线激光去除透明导电膜的指定区域并作为透明保护层的掩模材料的双重目的。 因此,使用通过可见光而不被紫外线通过的材料用作图案化的透明保护层。

    Method of solar battery output section fabrication
    2.
    发明授权
    Method of solar battery output section fabrication 有权
    太阳能电池输出部分制造方法

    公开(公告)号:US06471816B1

    公开(公告)日:2002-10-29

    申请号:US09537864

    申请日:2000-03-29

    IPC分类号: H01L3100

    摘要: In this method of solar battery output section fabrication, a metal foil is attached to an output terminal on a substrate surface, or a resin film is disposed over a conductive paste as the output terminal on the substrate surface. Subsequently, an opening is cut-out from the back side of the substrate to the metal foil or the conductive paste with a periphery cutter. Or, after the metal foil and a front side protective film is provided over the output terminal on the substrate surface, an opening is cut-out from the surface of the front side protective film to the metal foil with a periphery cutter.

    摘要翻译: 在该太阳能电池输出部的制造方法中,在基板表面上的输出端子上附着金属箔,或者在基板表面上作为输出端子设置导电性糊剂上的树脂膜。 随后,从基板的背面到金属箔或具有周边切割器的导电浆料切割开口。 或者,在基板表面的输出端子上设置金属箔和前侧保护膜之后,利用周边切割器将开口从前侧保护膜的表面切断到金属箔。

    METHOD OF MANUFACTURING SOLAR CELL
    5.
    发明申请
    METHOD OF MANUFACTURING SOLAR CELL 有权
    制造太阳能电池的方法

    公开(公告)号:US20120052622A1

    公开(公告)日:2012-03-01

    申请号:US13203509

    申请日:2010-02-26

    IPC分类号: H01L31/20

    摘要: A method for manufacturing a solar cell (100) includes the steps of: a step of cleaning an exposed region (R2) on a rear surface of an n-type crystalline silicon substrate (10n), wherein the step is carried out subsequent to a step of patterning an i-type amorphous semiconductor layer (11i) and a p-type amorphous semiconductor layer (11p) and prior to a step of forming an i-type amorphous semiconductor layer (12i).

    摘要翻译: 一种制造太阳能电池(100)的方法包括以下步骤:清洁n型晶体硅衬底(10n)的后表面上的暴露区域(R2)的步骤,其中所述步骤在 在形成i型非晶半导体层(11i)和p型非晶半导体层(11p)的图案化步骤之前,以及在形成i型非晶半导体层(12i)的步骤之前。

    Method of manufacturing solar cell
    9.
    发明授权
    Method of manufacturing solar cell 有权
    制造太阳能电池的方法

    公开(公告)号:US08664034B2

    公开(公告)日:2014-03-04

    申请号:US13203509

    申请日:2010-02-26

    IPC分类号: H01L21/00

    摘要: A method for manufacturing a solar cell (100) includes the steps of: a step of cleaning an exposed region (R2) on a rear surface of an n-type crystalline silicon substrate (10n), wherein the step is carried out subsequent to a step of patterning an i-type amorphous semiconductor layer (11i) and a p-type amorphous semiconductor layer (11p) and prior to a step of forming an i-type amorphous semiconductor layer (12i).

    摘要翻译: 一种制造太阳能电池(100)的方法包括以下步骤:清洁n型晶体硅衬底(10n)的后表面上的暴露区域(R2)的步骤,其中所述步骤在 在形成i型非晶半导体层(11i)和p型非晶半导体层(11p)的图案化步骤之前,以及在形成i型非晶半导体层(12i)的步骤之前。