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33 条记录 (耗时 0.023 秒)

    Integrated circuit
    3.
    发明授权
    Integrated circuit 失效
    集成电路

    公开(公告)号：US5245207A

    公开(公告)日：1993-09-14

    申请号：US568956

    申请日：1990-08-17

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    IPC分类号： H01L27/088 ,  H01L29/49

    CPC分类号： H01L29/49 ,  H01L27/0883 ,  H01L29/4916 ,  H01L29/4966 ,  H01L29/4975

    摘要： A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.

    摘要翻译： 即使在室温或液氮温度下也可以通过使用耗尽型MOSFET来实现耗尽操作，而不会在与栅极电极下方的沟道部分掺杂具有与半导体衬底的导电类型相反的导电类型的杂质。 此外，该FET可以与增强型FET一起构造逆变器，并且它们可以集成在一个衬底上。

    Plasma CVD of aluminum films
    6.
    发明授权
    Plasma CVD of aluminum films 失效
    铝膜等离子体CVD

    公开(公告)号：US5091210A

    公开(公告)日：1992-02-25

    申请号：US584637

    申请日：1990-09-19

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    IPC分类号： C23C16/20 ,  C23C16/452 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285

    CPC分类号： C23C16/452 ,  C23C16/20

    摘要： A deposited film formation method which forms an aluminum film by use of the plasma CVD method,wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A).A deposited film formation method which forms an aluminum film by use of the plasma CVD method, comprising:(a) the step of arranging a substrate having an electron donative surface (a) and a non-electron donative surface (B) in a space for deposited film formation equipped with a reverse flow preventive means into plasma, and(b) the step of introducing a gas of trimethylaluminum and hydrogen gas into said space for deposited film formation, said aluminum film being selectively formed on said electron donative surface (A).

    摘要翻译： 使用等离子体CVD法形成铝膜的沉积膜形成方法，其中具有给电子表面（A）和非电子给体表面（B）的基板被布置在用于沉积膜形成的空间中，具有 布置了朝向所述基板的横截面面积增加的部分，并且将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中以在所述给电子表面（A）上选择性地沉积铝膜。 一种通过使用等离子体CVD法形成铝膜的沉积膜形成方法，包括：（a）将具有给电子表面（a）和非电子给体表面（B）的衬底排列在空间中的步骤 （b）将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中的步骤，所述铝膜选择性地形成在所述给电子表面（A ）。

    Gas feeding device for controlled vaporization of an organanometallic compound used in deposition film formation
    7.
    发明授权
    Gas feeding device for controlled vaporization of an organanometallic compound used in deposition film formation 失效
    用于沉积膜形成中使用的有机金属化合物的气体进料装置

    公开(公告)号：US5779804A

    公开(公告)日：1998-07-14

    申请号：US439516

    申请日：1995-05-11

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    IPC分类号： C23C16/20 ,  C23C16/448 ,  C30B25/14 ,  C23C16/00

    CPC分类号： C23C16/4485 ,  C23C16/20 ,  C23C16/4482 ,  C23C16/4486 ,  C30B25/14

    摘要： A gas-feeding device for feeding a starting gas for deposition-film-formation by the chemical vapor deposition method, comprising a container having a space for discharging the starting gas containing an organometallic compound by introduction of a carrier gas; a gas-introducing means connected to the container for introducing a carrier gas is described. A plurality of openings for introducing the organometallic compound into the container is also provided, wherein each opening is part of an atomizer employing a piezoelectric element to eject the organometallic compound in a mist state into the container where the carrier gas passes through the space, and a container is provided for storing the organometallic compound.

    摘要翻译： 一种用于通过化学气相沉积方法供给用于沉积膜形成的起始气体的气体供给装置，包括：具有通过引入载气排出含有有机金属化合物的起始气体的空间的容器; 描述了连接到用于引入载气的容器的气体引入装置。 还提供了用于将有机金属化合物引入容器的多个开口，其中每个开口是使用压电元件的雾化器的一部分，以将喷雾状态的有机金属化合物喷射到载气通过该空间的容器中，以及 提供容器用于储存有机金属化合物。

    Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device
    9.
    发明授权
    Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device 失效
    通过使用氢化烷基铝形成沉积膜的方法和制备半导体器件的方法

    公开(公告)号：US5316972A

    公开(公告)日：1994-05-31

    申请号：US899940

    申请日：1992-06-17

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    IPC分类号： H01L21/285 ,  H01L21/768

    CPC分类号： H01L21/28562 ,  H01L21/76879

    摘要： In forming a deposited film composed mainly of Al according to the CVD method utilizing gas of alkyl aluminum hydride, hydrogen gas, and if desired, further gas containing Si atoms, film formation is carried out by shifting the deposition rate from a low deposition rate to a high deposition rate.According to this method, excellent selectivity is exhibited and also a film excellent in flatness can be deposited at a high deposition rate.

    摘要翻译： 在使用氢化烷基氢化铝，氢气，如果需要的话，根据CVD法形成主要由Al组成的沉积膜，还含有Si原子的气体，通过将沉积速率从低沉积速率转移到 沉积速率高。 根据该方法，显示出优异的选择性，并且可以以高沉积速率沉积出优异的平坦度的膜。

    Process for forming deposited film by use of alkyl aluminum hydride
    10.
    发明授权
    Process for forming deposited film by use of alkyl aluminum hydride 失效
    使用氢化烷基铝形成沉积膜的方法

    公开(公告)号：US5824150A

    公开(公告)日：1998-10-20

    申请号：US948401

    申请日：1997-10-10

    申请人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    发明人： Nobuo Mikoshiba ,  Kazuo Tsubouchi ,  Kazuya Masu

    IPC分类号： C23C16/20 ,  H01L21/285 ,  H01L21/768 ,  C30B25/02

    CPC分类号： H01L21/28562 ,  C23C16/20 ,  H01L21/76838

    摘要： A process and apparatus for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al. Pressure in a deposition chamber is maintained from 10.sup.-3 to 760 Torr. Alkyl aluminum hydride and hydrogen gas are introduced at a partial pressure from 1.5.times.10.sup.-5 to 1.3.times.10.sup.-3 of the pressure in the chamber. Aluminum is deposited on a substrate in the chamber by heating the substrate sufficiently to decompose the alkyl aluminum hydride.

    摘要翻译： 根据利用烷基氢化铝和氢的反应的CVD方法形成具有良好质量的Al膜的方法和装置，其是也能够选择性沉积Al的优异沉积膜形成工艺。 沉积室中的压力保持在10-3至760乇。 在室内的压力的1.5×10-5至1.3×10-3的分压下引入烷基氢化铝和氢气。 铝通过充分加热基底而沉积在室中的基底上以分解烷基铝氢化物。