公开(公告)号：US20110313184A1

公开(公告)日：2011-12-22

申请号：US13147719

申请日：2010-02-05

申请人： Nobuo Tajima ,  Shuji Nagano ,  Yoshiaki Inaishi ,  Hideharu Shimizu ,  Yoshi Ohashi ,  Takeshi Kada ,  Shigeki Matsumoto ,  Yong hua Xu

发明人： Nobuo Tajima ,  Shuji Nagano ,  Yoshiaki Inaishi ,  Hideharu Shimizu ,  Yoshi Ohashi ,  Takeshi Kada ,  Shigeki Matsumoto ,  Yong hua Xu

IPC分类号： C07F7/08 ,  C23C16/30 ,  C23C16/56 ,  C07F7/18

CPC分类号： H01L21/76801 ,  C23C16/30 ,  C23C16/5096 ,  H01L21/02123 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3148 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulating film material for plasma CVD of the present invention is constituted of a silicon compound including two hydrocarbon groups bonded to each other to form a ring structure together with a silicon atom, or at least one branched hydrocarbon group, wherein within the branched hydrocarbon group, α-carbon that is a carbon atom bonded to the silicon atom constitutes a methylene group, and β-carbon that is a carbon atom bonded to the methylene group or γ-carbon that is a carbon atom bonded to the β-carbon is a branching point.

摘要翻译： 本发明的等离子体CVD用绝缘膜材料由包含两个彼此键合的烃基的硅化合物构成，与硅原子或至少一个支链烃基一起形成环状结构，其中在支链烃基 ，与硅原子键合的碳原子的α-碳构成亚甲基，作为与亚甲基键合的碳原子的碳原子或与碳原子结合的碳原子的γ-碳 是一个分支点。

公开(公告)号：US20120328798A1

公开(公告)日：2012-12-27

申请号：US13582029

申请日：2011-02-25

申请人： Hideharu Shimizu ,  Shuji Nagano ,  Yoshi Ohashi ,  Takeshi Kada ,  Hisakatsu Sugawara

发明人： Hideharu Shimizu ,  Shuji Nagano ,  Yoshi Ohashi ,  Takeshi Kada ,  Hisakatsu Sugawara

IPC分类号： C09D5/00 ,  C23C16/28

CPC分类号： H01L21/02167 ,  C23C16/30 ,  C23C16/50 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274

摘要： A low-permittivity interlayer insulating film of the present invention is formed by a plasma CVD method and includes at least carbon and silicon, wherein a ratio of the carbon to the silicon is 2.5 or more, and relative permittivity is 3.8 or less. Also, a film formation method of a low-permittivity interlayer insulating film of the present invention includes forming a film of an insulating film material that includes at least carbon and silicon by a plasma CVD method, wherein a hydrocarbon is not used as the insulating film material, and a ratio of the carbon to the silicon is 2.5 or more, and relative permittivity is 3.8 or less in the formed low-permittivity interlayer insulating film.

摘要翻译： 本发明的低介电常数层间绝缘膜通过等离子体CVD法形成，至少包括碳和硅，其中碳与硅的比例为2.5以上，相对介电常数为3.8以下。 此外，本发明的低介电常数层间绝缘膜的成膜方法包括通过等离子体CVD法形成至少包含碳和硅的绝缘膜材料的膜，其中不使用烃作为绝缘膜 在形成的低介电常数层间绝缘膜中，碳与硅的比例为2.5以上，相对介电常数为3.8以下。