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公开(公告)号：US4829531A
公开(公告)日：1989-05-09
申请号：US82659
申请日：1987-08-07
CPC分类号： H01S5/14
摘要： The external resonator type semiconductor laser of the present invention includes a semiconductor laser element, a reflection member having a reflecting mirror surface for feeding back to the laser element a laser beam emitted from an emitting end surface of the semiconductor laser element, and a mount member for fixedly mounting the laser element and reflection member thereon. The coefficient of linear expansion of the mount member is adapted to be smaller than the coefficient of linear expansion of the semiconductor laser element and reflection member so that the distance between the emitting surface and the reflecting surface (i.e. the external resonator length) decreases with a rise in temperature.
摘要翻译： 本发明的外部谐振器型半导体激光器包括：半导体激光元件，具有反射镜面的反射部件，反射镜面用于将从半导体激光元件的发光端面射出的激光束向激光元件反射;以及安装部件 用于将激光元件和反射构件固定在其上。 安装构件的线膨胀系数适于小于半导体激光元件和反射构件的线膨胀系数，使得发射表面和反射表面之间的距离（即，外部谐振器长度）随着 温度升高
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公开(公告)号：US4864585A
公开(公告)日：1989-09-05
申请号：US169685
申请日：1988-03-18
CPC分类号： H01S5/142 , H01L2224/48463 , H01S5/02248 , H01S5/0612 , H01S5/0654 , H01S5/1039
摘要： An external cavity type semiconductor laser apparatus comprising a semiconductor laser device and an external reflector, which are mounted on a single mounting base with a distance therebetween, wherein laser light from the light-emitting rear facet of the laser device is reflected by the reflector and returns to the laser device, the coefficient of linear expansion of the mounting base being smaller than that of Cu and being greater than those of both the laser device and the reflector.
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公开(公告)号：US4860305A
公开(公告)日：1989-08-22
申请号：US161061
申请日：1988-02-26
摘要： An external cavity type semiconductor laser apparatus comprising a semiconductor laser device and an external cavity, which are mounted on a single mounting base with a space therebetween, wherein laser light emitted from the light-emitting rear facet of the laser device is reflected by the external cavity and returns to the laser device. The reflectivity of the light-emitting rear facet of the laser device being different from that of the light-emitting front facet of the laser device.
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公开(公告)号：US4811350A
公开(公告)日：1989-03-07
申请号：US81503
申请日：1987-08-04
CPC分类号： H01S5/14 , H01S5/02296 , H01S5/0612 , H01S3/082 , H01S5/0264 , H01S5/1039
摘要： A semiconductor laser apparatus and housing are designed so that laser light leaving the housing through a window glass in the housing satisfies the following equation (3): ##EQU1## wherein d is the distance between the window glass and the laser light-emitting facet of the semiconductor laser device, .lambda.o is the oscillation wavelength of laser light, and .DELTA..lambda. is the space between the adjacent longitudinal modes.
摘要翻译： 半导体激光装置和壳体被设计成使得通过壳体中的窗玻璃离开壳体的激光满足以下等式（3）：其中d是窗玻璃和激光发射器之间的距离， 半导体激光器件的发射面，λo是激光的振荡波长，并且DELTAλ是相邻纵向模式之间的空间。
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公开(公告)号：US4911512A
公开(公告)日：1990-03-27
申请号：US117690
申请日：1987-11-05
IPC分类号： H01L27/15 , G01L1/24 , G02B6/12 , G02B6/122 , G02F1/01 , G11B7/12 , G11B7/125 , G11B7/135 , H01S5/00 , H01S5/022 , H01S5/0687 , H01S5/14 , H01S5/187
CPC分类号： H01S5/141 , G01L1/243 , G11B7/124 , G11B7/125 , H01L2224/45144 , H01L2224/48463 , H01S5/02248 , H01S5/02292 , H01S5/0687
摘要： A waveguide type optical head comprises a thin film waveguide of semiconductor or dielectric substance formed on a semiconductor or dielectric substrate, an optical element with an optical signal processing function provided on the thin film waveguide, and a semiconductor laser fixed on the substrate for emitting laser beam into the waveguide, and is characterized in that part of the laser beam emitted from the semiconductor laser is reflected by the incident end surface of the thin film waveguide and returned to the semiconductor laser.
摘要翻译： 波导型光学头包括形成在半导体或电介质基板上的半导体或电介质的薄膜波导，在薄膜波导上提供的具有光信号处理功能的光学元件，以及固定在基板上用于发射激光的半导体激光器 并且其特征在于，从半导体激光器发射的激光束的一部分被薄膜波导的入射端面反射并返回到半导体激光器。
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公开(公告)号：US4815089A
公开(公告)日：1989-03-21
申请号：US732284
申请日：1985-05-09
申请人： Nobuyuki Miyauchi , Shigeki Maei , Osamu Yamamoto , Taiji Morimoto , Hiroshi Hayashi , Saburo Yamamoto
发明人： Nobuyuki Miyauchi , Shigeki Maei , Osamu Yamamoto , Taiji Morimoto , Hiroshi Hayashi , Saburo Yamamoto
CPC分类号： H01S5/028 , H01S5/2232 , H01S5/2237
摘要： A semiconductor laser includes a front mirror facet and a rear mirror facet. An Al.sub.2 O.sub.3 film coating is formed on the front mirror facet by electron beam evaporation so that the front mirror facet has a reflectance between 10 and 20%. A multi-layered coating is formed on the rear mirror facet so that the rear mirror facet has a reflectance higher than 90%.
摘要翻译： 半导体激光器包括前镜面和后镜面。 通过电子束蒸发在前镜面上形成Al 2 O 3膜涂层，使得前镜面具有10至20％的反射率。 在后镜面上形成多层涂层，使得后镜面的反射率高于90％。
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公开(公告)号：US4791636A
公开(公告)日：1988-12-13
申请号：US923953
申请日：1986-10-28
申请人： Saburo Yamamoto , Osamu Yamamoto , Taiji Morimoto , Hiroshi Hayashi , Nobuyuki Miyauchi , Shigeki Maei
发明人： Saburo Yamamoto , Osamu Yamamoto , Taiji Morimoto , Hiroshi Hayashi , Nobuyuki Miyauchi , Shigeki Maei
IPC分类号： H01S5/00 , H01S5/06 , H01S5/0625 , H01S3/19
CPC分类号： H01S5/0601 , H01S5/0035 , H01S5/0625
摘要： A semiconductor laser device comprising a laser-oscillating optical waveguide composed of a control region which functions to absorb light and main regions which function to oscillate laser light, said control region being positioned in the center portion of said optical waveguide and said main regions being positioned on both ends of said control region, wherein said laser device further comprises a shunting means by which the ratio of the current Ig flowing to said control region to the total current It injected into said laser device is set to meet the inequality (1): ##EQU1## wherein Lg is the length of said control region and Lt is the length of said optical waveguide.
摘要翻译： 一种半导体激光器件，包括由用于吸收光的控制区域和用于振荡激光的功能的主要区域组成的激光振荡光波导，所述控制区域位于所述光波导的中心部分中，并且所述主区域被定位 在所述控制区域的两端，其中所述激光装置还包括分流装置，通过该分流装置将流入所述控制区域的电流Ig与注入所述激光装置的总电流I i的比率设定为满足不等式（1）： （1）其中Lg是所述控制区域的长度，Lt是所述光波导的长度。
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公开(公告)号：US4730328A
公开(公告)日：1988-03-08
申请号：US787760
申请日：1985-10-15
申请人： Nobuyuki Miyauchi , Shigeki Maei , Osamu Yamamoto , Taiji Morimoto , Hiroshi Hayashi , Saburo Yamamoto
发明人： Nobuyuki Miyauchi , Shigeki Maei , Osamu Yamamoto , Taiji Morimoto , Hiroshi Hayashi , Saburo Yamamoto
摘要： A semiconductor laser comprising a substrate; a current blocking layer formed on said substrate; a striped channel formed in said current blocking layer on said substrate, said striped channel being narrow in the vicinity of the facets and being wide inside of the facets; an active layer, a portion of the active layer corresponds to the narrow portion of said striped channel being a plane to form a window region and another portion of the active layer corresponds to the wide portion of said striped channel being a crescent shape to form a laser operation area with a mesa-structure which is surrounded by burying layers to cut off current leakage from said laser operation area, the width of the mesa-portion of said laser operation area being not less than that of a current injection region formed within said striped channel.
摘要翻译： 一种包括基板的半导体激光器; 形成在所述衬底上的电流阻挡层; 形成在所述衬底上的所述电流阻挡层中的条纹沟道，所述条纹沟道在小平面附近变窄并且在所述小平面的内部较宽; 有源层，有源层的一部分对应于所述条纹沟道的窄部分，其是形成窗口区域的平面，并且有源层的另一部分对应于所述条纹沟道的宽部分是新月形，以形成 激光操作区域，其具有由掩埋层包围的台面结构，以切断来自所述激光操作区域的电流泄漏，所述激光操作区域的台面部分的宽度不小于形成在所述激光操作区域内的电流注入区域的宽度 条纹通道。
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公开(公告)号：US4737962A
公开(公告)日：1988-04-12
申请号：US734091
申请日：1985-05-15
CPC分类号： H01S5/24 , H01S3/082 , H01S5/028 , H01S5/1032 , H01S5/0622 , H01S5/10 , H01S5/4056
摘要： A compound resonator type semiconductor laser device comprising a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, and wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein, and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.
摘要翻译： 一种复合谐振器型半导体激光器件，包括具有第一激光器操作区域的多层晶体结构，所述第一激光器操作区域包含用于激光振荡的谐振器，以及第二激光器操作区域，所述第二激光器操作区域包含与所述谐振器的谐振器共面的谐振器 第一激光手术区; 以及用于将电流注入到所述多层晶体结构中的电流馈送器，并且其中在所述第二激光操作区域中与所述谐振器的面共享的所述第一激光器操作区域中的谐振器的所述小面被覆盖 保护膜以在其中获得高反射率，第一激光操作区域中的谐振器的另一个面被保护膜覆盖以在其中获得低反射率，并且覆盖第二激光操作区域中的谐振器的另一个面 具有保护膜以在其中获得高反射率。
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10.发明授权Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film 失效半导体激光装置具有设置在小面和保护膜之间的含硫膜
公开(公告)号：US5208468A
公开(公告)日：1993-05-04
申请号：US727375
申请日：1991-07-05
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译： 公开了从小面发射激光的半导体激光器件。 半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和 保护膜。
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