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公开(公告)号：US5250339A
公开(公告)日：1993-10-05
申请号：US940753
申请日：1992-09-08
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/72 , Y10S428/90 , Y10T428/12826 , Y10T428/265
摘要： A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.
摘要翻译： 一种适用于高密度记录的磁记录介质，包括非磁性基板盘，至少一个磁性层和至少一个保护层，所述磁性层和保护层依次形成在非磁性基板盘上， 其中所述非磁性基板盘包括玻璃基板和设置在所述玻璃基板上的至少一个非磁性金属膜，并且所述非磁性金属膜在其表面上设置有多个细小的同心凹槽。
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2.发明授权
公开(公告)号：US5147734A
公开(公告)日：1992-09-15
申请号：US323452
申请日：1989-03-14
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/84 , Y10T428/12861
摘要： A magnetic recording member with improved coercive force is obtained by:(a) forming by sputtering or Cr film on a non-magnetic substrate;(b) forming by sputtering an epitaxially grown film of a Co alloy containing at least Cr as an additional metal on the Cr film formed in the step (a);and applying a negative bias voltage to the substrate during at least one of steps (a) and (b).The coercive force of the magnetic recording member is further increased when high-frequency sputtering is used instead of direct current sputtering.
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公开(公告)号：US5069983A
公开(公告)日：1991-12-03
申请号：US414235
申请日：1989-09-29
申请人： Kyuzo Nakamura , Yoshifumi Ota , Michio Ishikawa , Noriaki Tani , Masanori Hashimoto , Yuzo Murata
发明人： Kyuzo Nakamura , Yoshifumi Ota , Michio Ishikawa , Noriaki Tani , Masanori Hashimoto , Yuzo Murata
CPC分类号： G11B5/7325 , G11B5/738 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/12847 , Y10T428/12854
摘要： A magnetic recording member having high coercive force, comprising:(a) a non-magnetic substrate;(b) a Cr base film formed on said substrate by a film forming process; and(c) a Co alloy film formed on said Cr base film by the same film forming process as in (b),wherein said Cr base film contains in addition to Cr at least one additional element selected from the group consisting of rare earth elements, Si, Cu, P and Ge, and wherein said Co alloy film is formed by continuous operation of said film forming process without interruption after completion of the formation of said Cr base film.
摘要翻译： 具有高矫顽力的磁记录元件，包括：（a）非磁性基片; （b）通过成膜工艺在所述基板上形成的Cr基膜; 和（c）通过与（b）中相同的成膜方法在所述Cr基膜上形成的Co合金膜，其中所述Cr基膜除Cr之外还含有至少一种选自稀土元素 Si，Cu，P和Ge，并且其中所述Co合金膜是在所述Cr基膜的形成完成之后，通过所述成膜工艺的连续操作而不间断地形成的。
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公开(公告)号：US5288329A
公开(公告)日：1994-02-22
申请号：US616106
申请日：1990-11-20
申请人： Kyuzo Nakamura , Michio Ishikawa , Kazuyuki Ito , Noriaki Tani , Masanori Hashimoto , Yoshifumi Ota
发明人： Kyuzo Nakamura , Michio Ishikawa , Kazuyuki Ito , Noriaki Tani , Masanori Hashimoto , Yoshifumi Ota
IPC分类号： C23C16/44 , C23C16/02 , C23C16/50 , C23C16/54 , C23F4/00 , H01L21/205 , H01L21/31 , H01L21/00
CPC分类号： C23C16/54 , C23C16/0245
摘要： An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.
摘要翻译： 一种在线型化学气相沉积装置，具有用于清洁至少基板保持件的蚀刻装置，该蚀刻装置设置在基板卸载站的下游，其中处理的基板在大气压力下从基板保持器移除。 蚀刻装置包括等离子体蚀刻装置，其中衬底保持器位于阳极侧或干蚀刻装置，其中衬底保持器位于阴极侧，从而减少装置的停机时间而不受任何影响 附着膜从基板保持器或其他部分剥离。
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公开(公告)号：US4832810A
公开(公告)日：1989-05-23
申请号：US70441
申请日：1987-07-07
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
CPC分类号： C23C14/3414 , C22F1/10
摘要： A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.
摘要翻译： 一种Co基合金溅射靶，其包括直角 相和h.c. 相，其中X射线衍射峰强度值Ifcc（200）/ Ihcp（101）的th值小于通过冷却具有第一相的Co基合金获得的Co基合金中相同比例的值， 一个fcc 从处于熔融状态的高温到单相至室温。 目标是通过对通过冷却具有直角角度的Co基合金材料获得的Co基合金进行冷加工处理来制造的。 单相从其熔融温度。
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公开(公告)号：US4804590A
公开(公告)日：1989-02-14
申请号：US934594
申请日：1986-11-25
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani
CPC分类号： G11B5/725 , Y10S428/90 , Y10T428/30
摘要： An abrasion resistant magnetic recording member having a carbonaceous surfacial protective film for protecting a surface of a magnetic film formed on a substrate, and the carbonaceous surfacial protective film is formed of a lower layer comprising a comparatively hard carbonaceous film and an upper layer comprising a comparatively soft carbonaceous film.
摘要翻译： 具有用于保护形成在基板上的磁性膜的表面的碳质表面保护膜的耐磨磁记录元件和碳质表面保护膜由包含比较硬的碳质膜和包含相对较硬的碳质膜的上层形成， 软碳质薄膜。
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公开(公告)号：US5198309A
公开(公告)日：1993-03-30
申请号：US89022
申请日：1987-08-24
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani
CPC分类号： G11B5/70621 , G11B5/64 , Y10S428/90 , Y10S428/928 , Y10T428/12847 , Y10T428/12854 , Y10T428/12861
摘要： An improved magnetic recording member comprising a magnetic metallic film having the composition Co.sub.x Cr.sub.y Ni.sub.z wherein x, y, and z are atomic ratios and 0.45.ltoreq.x
摘要翻译： 一种改进的磁记录元件，包括具有组成CoxCryNiz的磁性金属膜，其中x，y和z是原子比，0.45
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公开(公告)号：US5554418A
公开(公告)日：1996-09-10
申请号：US310760
申请日：1994-09-27
申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
发明人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
IPC分类号： C08J7/06 , C01B33/12 , C23C16/40 , G11B5/72 , G11B5/73 , G11B5/738 , G11B5/84 , G11B7/26 , B05D3/06 , C23C16/00
CPC分类号： C23C16/402
摘要： A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.
摘要翻译： 通过等离子体CVD工艺形成钝化膜，其中使用有机氧化硅作为原料气体。 当在基板的表面上形成作为钝化膜的SiO 2膜时，使用Ar，He或NH 3气体作为用作分解原料气体的辅助剂的反应性气体。 因此防止了氧或氢自由基的底物灰化。 可以将CF4或NF3的氟族气体加入反应气体中。 可以首先形成如上所述的钝化膜的SiO 2膜作为初始钝化膜，然后通过使用具有灰化效应的反应气体，例如O 2，N 2 O，O 3，可以在初始钝化膜的顶部形成另一钝化膜 和H2。
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9.发明授权
公开(公告)号：US5840374A
公开(公告)日：1998-11-24
申请号：US661500
申请日：1996-06-11
申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
发明人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
CPC分类号： C23C16/401
摘要： An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.
摘要翻译： 通过等离子体化学气相沉积（CVD）工艺在由塑料材料制成的衬底的表面上形成SiO 2钝化膜，其中使用有机氧化硅作为原料气体。 代替具有灰化效应的反应气体，使用Ar，He或NH 3作为反应气体，其用作在不高于基底热变形的温度（即，约 250℃）。 因此防止了氧或氢自由基对衬底的灰化。
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公开(公告)号：US5024854A
公开(公告)日：1991-06-18
申请号：US412535
申请日：1989-09-22
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada
摘要： A perpendicular type magnetic recording member comprising a perpendicular-incidence magnetic film on a substrate, the perpendicular-incidence magnetic film comprising a magnetic metal and oxygen, the magnetic metal being selected from the group consisting of ferro-magnetic alloys, alloys thereof and combinations thereof; and a method of manufacturing the perpendicular type recording member by utilizing vapor deposition techniques, which may include sputtering and ionization.
摘要翻译： 一种垂直型磁记录部件，包括在基板上的垂直入射磁性膜，所述垂直入射磁性膜包括磁性金属和氧，所述磁性金属选自铁磁性合金，其合金及其组合 ; 以及通过利用可包括溅射和电离的气相沉积技术来制造垂直型记录部件的方法。
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