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52 条记录 (耗时 0.029 秒)

    Magnetic recording member
    1.
    发明授权
    Magnetic recording member 失效
    磁记录部件

    公开(公告)号：US5069983A

    公开(公告)日：1991-12-03

    申请号：US414235

    申请日：1989-09-29

    申请人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Michio Ishikawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yuzo Murata

    发明人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Michio Ishikawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yuzo Murata

    IPC分类号： G11B5/73 ,  G11B5/738

    CPC分类号： G11B5/7325 ,  G11B5/738 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12847 ,  Y10T428/12854

    摘要： A magnetic recording member having high coercive force, comprising:(a) a non-magnetic substrate;(b) a Cr base film formed on said substrate by a film forming process; and(c) a Co alloy film formed on said Cr base film by the same film forming process as in (b),wherein said Cr base film contains in addition to Cr at least one additional element selected from the group consisting of rare earth elements, Si, Cu, P and Ge, and wherein said Co alloy film is formed by continuous operation of said film forming process without interruption after completion of the formation of said Cr base film.

    摘要翻译： 具有高矫顽力的磁记录元件，包括：（a）非磁性基片; （b）通过成膜工艺在所述基板上形成的Cr基膜; 和（c）通过与（b）中相同的成膜方法在所述Cr基膜上形成的Co合金膜，其中所述Cr基膜除Cr之外还含有至少一种选自稀土元素 Si，Cu，P和Ge，并且其中所述Co合金膜是在所述Cr基膜的形成完成之后，通过所述成膜工艺的连续操作而不间断地形成的。

    Magnetic recording medium
    2.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号：US5250339A

    公开(公告)日：1993-10-05

    申请号：US940753

    申请日：1992-09-08

    申请人： Noriaki Tani ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Masanori Hashimoto ,  Yoshifumi Ota

    发明人： Noriaki Tani ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Masanori Hashimoto ,  Yoshifumi Ota

    IPC分类号： G11B5/66 ,  G11B5/72 ,  G11B5/73 ,  B32B3/02

    CPC分类号： G11B5/7325 ,  G11B5/66 ,  G11B5/72 ,  Y10S428/90 ,  Y10T428/12826 ,  Y10T428/265

    摘要： A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.

    摘要翻译： 一种适用于高密度记录的磁记录介质，包括非磁性基板盘，至少一个磁性层和至少一个保护层，所述磁性层和保护层依次形成在非磁性基板盘上， 其中所述非磁性基板盘包括玻璃基板和设置在所述玻璃基板上的至少一个非磁性金属膜，并且所述非磁性金属膜在其表面上设置有多个细小的同心凹槽。

    Co-based alloy sputter target and process of manufacturing the same
    5.
    发明授权
    Co-based alloy sputter target and process of manufacturing the same 失效
    Co基合金溅射靶及其制造方法

    公开(公告)号：US4832810A

    公开(公告)日：1989-05-23

    申请号：US70441

    申请日：1987-07-07

    申请人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Taiki Yamada ,  Michio Ishikawa ,  Noriaki Tani ,  Yasushi Higuchi

    发明人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Taiki Yamada ,  Michio Ishikawa ,  Noriaki Tani ,  Yasushi Higuchi

    IPC分类号： C22F1/10 ,  C23C14/34

    CPC分类号： C23C14/3414 ,  C22F1/10

    摘要： A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.

    摘要翻译： 一种Co基合金溅射靶，其包括直角 相和h.c. 相，其中X射线衍射峰强度值Ifcc（200）/ Ihcp（101）的th值小于通过冷却具有第一相的Co基合金获得的Co基合金中相同比例的值， 一个fcc 从处于熔融状态的高温到单相至室温。 目标是通过对通过冷却具有直角角度的Co基合金材料获得的Co基合金进行冷加工处理来制造的。 单相从其熔融温度。

    Method of forming passivation film
    8.
    发明授权
    Method of forming passivation film 失效
    钝化膜形成方法

    公开(公告)号：US5554418A

    公开(公告)日：1996-09-10

    申请号：US310760

    申请日：1994-09-27

    申请人： Kazuyuki Ito ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Jun Togawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yumiko Ohashi

    发明人： Kazuyuki Ito ,  Kyuzo Nakamura ,  Michio Ishikawa ,  Jun Togawa ,  Noriaki Tani ,  Masanori Hashimoto ,  Yumiko Ohashi

    IPC分类号： C08J7/06 ,  C01B33/12 ,  C23C16/40 ,  G11B5/72 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B7/26 ,  B05D3/06 ,  C23C16/00

    CPC分类号： C23C16/402

    摘要： A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.

    摘要翻译： 通过等离子体CVD工艺形成钝化膜，其中使用有机氧化硅作为原料气体。 当在基板的表面上形成作为钝化膜的SiO 2膜时，使用Ar，He或NH 3气体作为用作分解原料气体的辅助剂的反应性气体。 因此防止了氧或氢自由基的底物灰化。 可以将CF4或NF3的氟族气体加入反应气体中。 可以首先形成如上所述的钝化膜的SiO 2膜作为初始钝化膜，然后通过使用具有灰化效应的反应气体，例如O 2，N 2 O，O 3，可以在初始钝化膜的顶部形成另一钝化膜 和H2。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20100317189A1

    公开(公告)日：2010-12-16

    申请号：US12676322

    申请日：2008-09-03

    申请人： Hideaki Zama ,  Michio Ishikawa ,  Takumi Kadota ,  Chihiro Hasegawa

    发明人： Hideaki Zama ,  Michio Ishikawa ,  Takumi Kadota ,  Chihiro Hasegawa

    IPC分类号： H01L21/768

    CPC分类号： C23C16/18 ,  C23C16/045 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L29/7833

    摘要： Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).

    摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件具有降低含有含钌膜和含铜膜的铜布线的电阻，从而提高了可靠性。 还公开了一种用于制造半导体器件的装置。 具体地说，通过使用含有由通式表示的有机钌络合物和还原气体的原料的CVD法，在具有凹部的基板上形成Ru膜（步骤S12）。 然后，通过CVD法使用含有通式表示的有机铜络合物的原料和还原气体在Ru膜上形成Cu膜，从而在凹陷部中形成含有Ru膜和Cu膜的铜布线 部分（步骤S14）。