Electrostatic chuck module and cooling system
    2.
    发明授权
    Electrostatic chuck module and cooling system 失效
    静电吸盘模块和冷却系统

    公开(公告)号:US07615133B2

    公开(公告)日:2009-11-10

    申请号:US10497720

    申请日:2002-12-03

    摘要: An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.

    摘要翻译: 一种用于半导体制造装置的静电吸盘模块,其可以用水冷却并且其中没有渗透泄漏包括氧化铝的静电吸盘和与静电吸盘结合的冷却板,其中冷却板通过锻造形成 对Cu-W,Cu-W-Ni,Cu-Mo或Cu-Mo-Ni的Cu基复合材料的加工。 通过在Cu系复合材料中调节热膨胀系数大的Cu和Ni的比例以及热膨胀系数小的W和Mo,可以获得具有相同的热膨胀系数的高导热性材料 用于静电卡盘的氧化铝材料。 然而,由于这种复合材料具有渗透泄漏,所以不能用于真空系统。 根据本发明,通过进行锻造处理,能够防止渗透泄漏。 此外,通过电镀或溅射施加Ni,Cr或Cu膜,可以提高对冷却板重要的耐腐蚀性。

    Electrostatic clampless holder module and cooling system
    3.
    发明申请
    Electrostatic clampless holder module and cooling system 失效
    静电无夹持器模块和冷却系统

    公开(公告)号:US20050127619A1

    公开(公告)日:2005-06-16

    申请号:US10497720

    申请日:2002-12-03

    摘要: An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.

    摘要翻译: 一种用于半导体制造装置的静电吸盘模块,其可以用水冷却并且其中没有渗透泄漏包括氧化铝的静电吸盘和与静电吸盘结合的冷却板,其中冷却板通过锻造形成 对Cu-W,Cu-W-Ni,Cu-Mo或Cu-Mo-Ni的Cu基复合材料的加工。 通过在Cu系复合材料中调节热膨胀系数大的Cu和Ni的比例以及热膨胀系数小的W和Mo,可以获得具有相同的热膨胀系数的高导热性材料 用于静电卡盘的氧化铝材料。 然而,由于这种复合材料具有渗透泄漏,所以不能用于真空系统。 根据本发明,通过进行锻造处理,能够防止渗透泄漏。 此外,通过电镀或溅射施加Ni,Cr或Cu膜,可以提高对冷却板重要的耐腐蚀性。

    Surface Processing Apparatus
    4.
    发明申请
    Surface Processing Apparatus 审中-公开
    表面处理设备

    公开(公告)号:US20080053614A1

    公开(公告)日:2008-03-06

    申请号:US11845135

    申请日:2007-08-27

    IPC分类号: C23F1/00 C23C16/00 H01L21/306

    摘要: A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.

    摘要翻译: 表面处理装置包括:处理室,包括气体喷射机构; 用于排出所述处理室内部的废气; 以及用于向气体喷射机构供给气体的气体供给。 气体喷射机构包括:第一气体分配机构,用于将气体分配到冷却或加热机构中,包括布置在框架构件中的气体分配板,气体分配板具有多个穿过其延伸的孔,冷却或加热机构 具有延伸穿过其中的多个气体通道,所述板具有多个出口以将气体喷射到处理室中,其中板中的出口多于具有气体通道的多个出口,并且板被固定到第二气体分配机构,其具有 夹紧构件。

    Semiconductor device manufacturing method
    5.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号:US07976716B2

    公开(公告)日:2011-07-12

    申请号:US12392385

    申请日:2009-02-25

    IPC分类号: B44C1/22

    CPC分类号: H01L21/67017 H01L21/67109

    摘要: A method of using a heat exchanger efficiently and uniformly to cool or heats portions to be controlled to a prescribed temperature, and then continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

    摘要翻译: 使用热交换器有效地均匀地将要控制的部分冷却或加热到规定温度的方法,然后连续进行稳定的处理。 热交换器通过在两个板之间布置分隔壁而构成,以形成流体通道和平行于通道的翅片,或者在两个板的每一个上倾斜规定的角度,以使得该通道与与该通道接触的构件 板被冷却或加热流体流过通道。

    Surface processing apparatus
    6.
    发明申请
    Surface processing apparatus 审中-公开
    表面处理装置

    公开(公告)号:US20080156440A1

    公开(公告)日:2008-07-03

    申请号:US12000624

    申请日:2007-12-14

    IPC分类号: H01L21/306 C23F1/00 C23C16/00

    摘要: A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.

    摘要翻译: 表面处理装置包括:处理室,包括气体喷射机构; 用于排出所述处理室内部的废气; 以及用于向气体喷射机构供给气体的气体供给。 气体喷射机构包括用于将气体分配到冷却或加热机构中的第一气体分配机构,包括设置在框架构件中的气体分配板,气体分配板具有穿过其延伸的多个孔,冷却或加热机构 具有延伸穿过其中的多个气体通道,所述板具有多个出口以将气体喷射到处理室中,其中板中的出口多于具有气体通道的多个出口,并且板被固定到第二气体分配机构,其具有 夹紧构件。

    Electrostatic chucking stage and substrate processing apparatus
    7.
    再颁专利
    Electrostatic chucking stage and substrate processing apparatus 有权
    静电吸附台和基板处理装置

    公开(公告)号:USRE42175E1

    公开(公告)日:2011-03-01

    申请号:US12470231

    申请日:2009-05-21

    IPC分类号: H01L21/00 C23C16/00 C23C14/00

    CPC分类号: B25B11/002 Y10T279/23

    摘要: This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

    摘要翻译: 本申请公开了一种ESC阶段的结构,其中夹持电极被中间层和覆盖层夹持。 调节层和覆盖层在电介质板和夹持电极之间具有热膨胀系数。 本申请还公开了一种ESC台的结构,其中夹持电极被夹持在与夹持电极相反的内部应力的调节层和覆盖层。 本申请进一步公开了一种用于在基板保持在高于室温的温度下进行基板上的处理的基板处理装置,其包括在该过程期间保持基板的静电夹持台。

    Substrate processing apparatus
    8.
    发明授权
    Substrate processing apparatus 有权
    基板加工装置

    公开(公告)号:US07513063B2

    公开(公告)日:2009-04-07

    申请号:US10375349

    申请日:2003-02-28

    IPC分类号: F26B17/00

    CPC分类号: H01L21/67017 H01L21/67109

    摘要: A heat exchanger efficiently and uniformly cools or heats portions to be controlled to a prescribed temperature, and then provides a surface processing apparatus which makes it possible to continuously carry out stable processing. The heat exchanger is constructed by arranging partition walls between two plates to form a fluid channel and a fin parallel with the channel or inclined by a prescribed angle on each of the two plates insides the channel so that the plate or a member in contact with the plate is cooled or heated with the fluid flowing through the channel.

    摘要翻译: 热交换器将要控制的部分有效地均匀地冷却或加热到规定温度,然后提供能够连续进行稳定加工的表面处理装置。 热交换器通过在两个板之间布置分隔壁而构成,以形成流体通道和平行于通道的翅片,或者在两个板的每一个上倾斜规定的角度,以使得该通道与与该通道接触的构件 板被冷却或加热流体流过通道。

    Electrostatic chucking stage and substrate processing apparatus
    9.
    发明授权
    Electrostatic chucking stage and substrate processing apparatus 有权
    静电吸附台和基板处理装置

    公开(公告)号:US07220319B2

    公开(公告)日:2007-05-22

    申请号:US10413136

    申请日:2003-04-15

    IPC分类号: H01L21/00 C23C16/00

    CPC分类号: B25B11/002 Y10T279/23

    摘要: This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

    摘要翻译: 本申请公开了一种ESC阶段的结构,其中夹持电极被中间层和覆盖层夹持。 调节层和覆盖层在电介质板和夹持电极之间具有热膨胀系数。 本申请还公开了一种ESC台的结构,其中夹持电极被夹持在与夹持电极相反的内部应力的调节层和覆盖层。 本申请进一步公开了一种用于在基板保持在高于室温的温度下进行基板上的处理的基板处理装置,其包括在该过程期间保持基板的静电夹持台。

    Electrostatic chucking stage and substrate processing apparatus
    10.
    发明授权
    Electrostatic chucking stage and substrate processing apparatus 有权
    静电吸附台和基板处理装置

    公开(公告)号:US07175737B2

    公开(公告)日:2007-02-13

    申请号:US10413137

    申请日:2003-04-15

    IPC分类号: C23F1/00

    摘要: This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses optimum total thickness of the ESC stage, optimum volume ratio of composite which the moderation layer is made of, and an optimum range of the thermal expansion coefficient of the composite. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

    摘要翻译: 本申请公开了一种ESC阶段的结构,其中夹持电极被中间层和覆盖层夹持。 调节层和覆盖层在电介质板和夹持电极之间具有热膨胀系数。 本申请还公开了ESC级的最佳总厚度,由适当层组成的复合材料的最佳体积比,以及复合材料的热膨胀系数的最佳范围。 本申请进一步公开了一种用于在基板保持在高于室温的温度下进行基板上的处理的基板处理装置,其包括在该过程期间保持基板的静电夹持台。