公开(公告)号：US07011744B2

公开(公告)日：2006-03-14

申请号：US10308164

申请日：2002-12-03

申请人： Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Jun Miyaji ,  Noriaki Tateno

发明人： Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Jun Miyaji ,  Noriaki Tateno

IPC分类号： B01D36/00 ,  F25B29/00

CPC分类号： G05D23/1393

摘要： A brine supply unit for supplying brine to at least one load after controlling the brine so as to meet a target temperature of the load comprises: a heat exchanger disposed at a brine-cooling channel, through which the brine returned from the load flows, for cooling the brine with water for industrial use; a heater disposed at a brine-heating channel formed in parallel with the brine-cooling channel, through which the brine flows, for heating the brine; a mixing section disposed at a connecting portion between the brine-cooling channel and the brine-heating channel, for mixing the cooled brine and the heated brine; and a tank disposed between the mixing section and the load, which has a capacity of about 10 liters or more and is constructed so that the brine can pass therethrough slowly to relieve a sudden temperature change of the brine.

公开(公告)号：US07615133B2

公开(公告)日：2009-11-10

申请号：US10497720

申请日：2002-12-03

申请人： Noriaki Tateno ,  Jun Miyaji ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru

发明人： Noriaki Tateno ,  Jun Miyaji ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.

摘要翻译： 一种用于半导体制造装置的静电吸盘模块，其可以用水冷却并且其中没有渗透泄漏包括氧化铝的静电吸盘和与静电吸盘结合的冷却板，其中冷却板通过锻造形成 对Cu-W，Cu-W-Ni，Cu-Mo或Cu-Mo-Ni的Cu基复合材料的加工。 通过在Cu系复合材料中调节热膨胀系数大的Cu和Ni的比例以及热膨胀系数小的W和Mo，可以获得具有相同的热膨胀系数的高导热性材料 用于静电卡盘的氧化铝材料。 然而，由于这种复合材料具有渗透泄漏，所以不能用于真空系统。 根据本发明，通过进行锻造处理，能够防止渗透泄漏。 此外，通过电镀或溅射施加Ni，Cr或Cu膜，可以提高对冷却板重要的耐腐蚀性。

公开(公告)号：US20050127619A1

公开(公告)日：2005-06-16

申请号：US10497720

申请日：2002-12-03

申请人： Noriaki Tateno ,  Jun Miyaji ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru

发明人： Noriaki Tateno ,  Jun Miyaji ,  Yasumi Sago ,  Masayoshi Ikeda ,  Kazuaki Kaneko ,  Tomio Takamura ,  Tadashi Hirayama ,  Yoshiyuki Ikemura ,  Masahiko Tamaru

IPC分类号： F25D1/02 ,  F25D9/00 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00 ,  B23B31/28

CPC分类号： H01L21/67103 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented. Also, corrosion resistance which is important for a cooling plate can be improved by applying a Ni, Cr or Cu film by plating or sputtering.

摘要翻译： 一种用于半导体制造装置的静电吸盘模块，其可以用水冷却并且其中没有渗透泄漏包括氧化铝的静电吸盘和与静电吸盘结合的冷却板，其中冷却板通过锻造形成 对Cu-W，Cu-W-Ni，Cu-Mo或Cu-Mo-Ni的Cu基复合材料的加工。 通过在Cu系复合材料中调节热膨胀系数大的Cu和Ni的比例以及热膨胀系数小的W和Mo，可以获得具有相同的热膨胀系数的高导热性材料 用于静电卡盘的氧化铝材料。 然而，由于这种复合材料具有渗透泄漏，所以不能用于真空系统。 根据本发明，通过进行锻造处理，能够防止渗透泄漏。 此外，通过电镀或溅射施加Ni，Cr或Cu膜，可以提高对冷却板重要的耐腐蚀性。

公开(公告)号：US07907383B2

公开(公告)日：2011-03-15

申请号：US12086967

申请日：2007-02-08

申请人： Masami Ando ,  Jun Miyaji ,  Osamu Okamoto

发明人： Masami Ando ,  Jun Miyaji ,  Osamu Okamoto

IPC分类号： H01T23/00 ,  C04B35/00

CPC分类号： H02N13/00 ,  C04B35/111 ,  C04B35/6455 ,  C04B2235/3232 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/85 ,  H01L21/6833

摘要： The present invention provides an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped and easy to manufacture by low-temperature firing. The electrostatic chuck includes a dielectric material in which alumina is 99.4 wt % or more, and titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, wherein the electrostatic chuck's volume resistivity is 108-1011 Ωcm in room temperature, and wherein the titanium oxide segregates in boundaries of particles of the alumina.

摘要翻译： 本发明提供了一种静电卡盘，其中表面可以在暴露于等离子体之后保持光滑，以保护待被夹持的材料如硅晶片免受颗粒污染，并且夹紧和释放 待夹紧的材料并通过低温烧制容易制造。 静电卡盘包括氧化铝为99.4重量％以上，氧化钛大于0.2重量％且为0.6重量％以下的电介质材料，其中静电卡盘的体积电阻率为108-1011质量％ 室温，其中氧化钛在氧化铝颗粒的边界分离。

公开(公告)号：US07672111B2

公开(公告)日：2010-03-02

申请号：US11998463

申请日：2007-11-29

申请人： Jun Miyaji ,  Ikuo Itakura ,  Shoichiro Himuro

发明人： Jun Miyaji ,  Ikuo Itakura ,  Shoichiro Himuro

IPC分类号： H02N13/00 ,  H02H1/00

CPC分类号： H01L21/6831 ,  H01L21/68757 ,  Y10T29/49117

摘要： An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode, and the insulator film has a thickness of 0.6 mm or less. Alternatively, An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode selectively formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode. The insulative adhesive is interposed also between the insulator film and a portion of the surface of the dielectric substrate where the electrode is not formed, and the insulative adhesive has a thermal conductivity of 1 W/mK or more.

摘要翻译： 静电卡盘包括：具有通过热喷涂形成在其表面上的绝缘膜的金属板; 以及在其表面上形成有电极的电介质基板。 金属板和电介质基板通过插入其间的绝缘性粘合剂结合在一起，使得绝缘膜与电极相对，绝缘膜的厚度为0.6mm以下。 或者，静电卡盘包括：具有通过热喷涂形成在其表面上的绝缘膜的金属板; 以及具有选择性地形成在其表面上的电极的电介质基板。 金属板和电介质基板之间通过绝缘粘合剂粘合在一起，使得绝缘膜与电极相对。 该绝缘性粘合剂还介于绝缘膜与不形成电极的电介质基板的表面的一部分之间，绝缘性粘接剂的导热率为1W / m·K以上。

公开(公告)号：US20090273877A1

公开(公告)日：2009-11-05

申请号：US12086967

申请日：2007-02-08

申请人： Masami Ando ,  Jun Miyaji ,  Osamu Okamoto

发明人： Masami Ando ,  Jun Miyaji ,  Osamu Okamoto

IPC分类号： H01L21/683

CPC分类号： H02N13/00 ,  C04B35/111 ,  C04B35/6455 ,  C04B2235/3232 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/85 ,  H01L21/6833

摘要： The present invention provides an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped and easy to manufacture by low-temperature firing. The electrostatic chuck includes a dielectric material in which alumina is 99.4 wt % or more, and titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, wherein the electrostatic chuck's volume resistivity is 108-1011 Ωcm in room temperature, and wherein the titanium oxide segregates in boundaries of particles of the alumina.

摘要翻译： 本发明提供了一种静电卡盘，其中表面可以在暴露于等离子体之后保持光滑，以保护待被夹持的材料如硅晶片免受颗粒污染，并且夹紧和释放 待夹紧的材料并通过低温烧制容易制造。 静电卡盘包括氧化铝为99.4重量％以上且氧化钛大于0.2重量％且为0.6重量％以下的电介质材料，其中静电吸盘的体积电阻率为室温下的108-1011欧姆 ，并且其中所述氧化钛在所述氧化铝颗粒的边界分离。

公开(公告)号：US07450365B2

公开(公告)日：2008-11-11

申请号：US11879204

申请日：2007-07-16

申请人： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

发明人： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

IPC分类号： H01T23/00

CPC分类号： H02N13/00

摘要： The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011 Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C or less.

摘要翻译： 本发明的目的是提供一种静电卡盘，其中在暴露于等离子体之后该表面可以保持光滑，以保护被夹持的材料如硅晶片免受颗粒污染，并且这是优异的 夹紧和释放待夹紧的材料。 根据本发明，提供了一种静电卡盘，其包括电介质材料，其中氧化铝为99.4重量％以上，氧化钛大于0.2重量％且等于或小于0.6重量％，其平均粒径为2 在室温下体积电阻率为10 -8 -10 11Ω，其中静电卡盘的使用温度低于100℃或更低。

公开(公告)号：US20070109713A1

公开(公告)日：2007-05-17

申请号：US11272788

申请日：2005-11-15

申请人： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

发明人： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

IPC分类号： H01T23/00

CPC分类号： H02N13/00

摘要： The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011 Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C. or less.

摘要翻译： 本发明的目的是提供一种静电卡盘，其中在暴露于等离子体之后该表面可以保持光滑，以保护被夹持的材料如硅晶片免受颗粒污染，并且这是优异的 夹紧和释放待夹紧的材料。 根据本发明，提供了一种静电卡盘，其包括电介质材料，其中氧化铝为99.4重量％以上，氧化钛大于0.2重量％且等于或小于0.6重量％，其平均粒径为2 在室温下其体积电阻率为10 -8 -10 11Ω，其中静电吸盘在100℃以下的低温下使用 。

公开(公告)号：US20070258187A1

公开(公告)日：2007-11-08

申请号：US11879204

申请日：2007-07-16

申请人： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

发明人： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

IPC分类号： H01T23/00

CPC分类号： H02N13/00

摘要： The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxdde is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 pm or less, and whose volume resistivity is 108-1011 Ωcm in room temperature, wherein the electrostatic chuck is used in a low lo temperature of 100 ° C. or less.

摘要翻译： 本发明的目的是提供一种静电卡盘，其中在暴露于等离子体之后该表面可以保持光滑，以保护被夹持的材料如硅晶片免受颗粒污染，并且这是优异的 夹紧和释放待夹紧的材料。 根据本发明，提供了一种静电卡盘，其包括氧化铝为99.4重量％以上的电介质材料，钛氧化物的平均粒径为2重量％以上且0.2重量％以上且0.6重量％以下 pm或更小，其体积电阻率为室温下的10±10℃，其中静电吸盘以低的温度为100℃使用，或 减。

公开(公告)号：US20080212255A1

公开(公告)日：2008-09-04

申请号：US11998463

申请日：2007-11-29

申请人： Jun Miyaji ,  Ikuo Itakura ,  Shoichiro Himuro

发明人： Jun Miyaji ,  Ikuo Itakura ,  Shoichiro Himuro

IPC分类号： H01L21/683 ,  H05K3/00

CPC分类号： H01L21/6831 ,  H01L21/68757 ,  Y10T29/49117

摘要： An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode, and the insulator film has a thickness of 0.6 mm or less. Alternatively, An electrostatic chuck includes: a metal plate with an insulator film formed on a surface thereof by thermal spraying; and a dielectric substrate with an electrode selectively formed on a surface thereof. The metal plate and the dielectric substrate are bonded together via an insulative adhesive interposed therebetween so that the insulator film is opposed to the electrode. The insulative adhesive is interposed also between the insulator film and a portion of the surface of the dielectric substrate where the electrode is not formed, and the insulative adhesive has a thermal conductivity of 1 W/mK or more.

摘要翻译： 静电卡盘包括：具有通过热喷涂形成在其表面上的绝缘膜的金属板; 以及在其表面上形成有电极的电介质基板。 金属板和电介质基板通过插入其间的绝缘性粘合剂结合在一起，使得绝缘膜与电极相对，绝缘膜的厚度为0.6mm以下。 或者，静电卡盘包括：具有通过热喷涂形成在其表面上的绝缘膜的金属板; 以及具有选择性地形成在其表面上的电极的电介质基板。 金属板和电介质基板之间通过绝缘粘合剂粘合在一起，使得绝缘膜与电极相对。 该绝缘性粘合剂还介于绝缘膜与不形成电极的电介质基板的表面的一部分之间，绝缘性粘合剂的导热率为1W / m·K以上。