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    AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, PRODUCTION METHOD THEREOF, AND CHEMICAL MECHANICAL POLISHING METHOD
    3.
    发明申请
    AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, PRODUCTION METHOD THEREOF, AND CHEMICAL MECHANICAL POLISHING METHOD 审中-公开
    化学机械抛光水性分散体及其生产方法及化学机械抛光方法

    公开(公告)号：US20090325323A1

    公开(公告)日：2009-12-31

    申请号：US12373897

    申请日：2007-07-11

    申请人： Tomikazu Ueno ,  Norihiko Ikeda ,  Mitsuru Meno

    发明人： Tomikazu Ueno ,  Norihiko Ikeda ,  Mitsuru Meno

    IPC分类号： C09G1/02 ,  H01L21/304 ,  C09K13/00

    CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/31053

    摘要： There is provided an aqueous dispersion for chemical mechanical polishing that comprises abrasives comprising: (A) 100 parts by weight of inorganic particles comprising ceria, (B) 5 to 100 parts by weight of cationic organic polymer particles, and (C) 5 to 120 parts by weight of anionic water-soluble compound. The aqueous dispersion for chemical mechanical polishing is preferably produced by a method comprising a step of adding a second liquid comprising (C) 5 to 30 wt % of anionic water-soluble compound to a first liquid comprising (A) 0.1 to 10 wt % of inorganic particles comprising ceria and (B) 5 to 100 parts by weight of cationic organic polymer particles based on 100 parts by weight of the inorganic particles (A).

    摘要翻译： 提供了一种用于化学机械抛光的水性分散体，其包括研磨剂，其包含：（A）100重量份的包含二氧化铈的无机颗粒，（B）5至100重量份的阳离子有机聚合物颗粒，和（C）5至120 重量份的阴离子水溶性化合物。 用于化学机械抛光的水性分散体优选通过包括以下步骤的方法来制备：将包含（C）5至30重量％的阴离子水溶性化合物的第二液体添加到第一液体中的步骤，所述第一液体包含（A）0.1至10重量％ 包含二氧化铈的无机颗粒和（B）基于100重量份的无机颗粒（A）的5至100重量份的阳离子有机聚合物颗粒。

    AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
    4.
    发明申请
    AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE 有权
    用于半导体器件的化学机械抛光和化学机械抛光方法的水溶液分散体

    公开(公告)号：US20100099260A1

    公开(公告)日：2010-04-22

    申请号：US12529545

    申请日：2008-02-20

    申请人： Taichi Matsumoto ,  Tomikazu Ueno ,  Michiaki Andou

    发明人： Taichi Matsumoto ,  Tomikazu Ueno ,  Michiaki Andou

    IPC分类号： H01L21/302 ,  C09K13/00

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

    摘要： A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

    摘要翻译： 化学机械研磨用水系分散体包含（A）由BET法测定的比表面积为10〜60nm计算出的平均粒径的胶体二氧化硅，（B）具有2个以上羧基的有机酸和1个以上 一个分子中的羟基，（C）由以下通式（1）表示的季铵化合物，其中R 1至R 4各自表示烃基，M-表示阴离子，化学机械研磨水分散体的pH为 3〜5。

    CHEMICAL MECHANICAL POLISHING PAD
    5.
    发明申请
    CHEMICAL MECHANICAL POLISHING PAD 有权
    化学机械抛光垫

    公开(公告)号：US20090209185A1

    公开(公告)日：2009-08-20

    申请号：US12360967

    申请日：2009-01-28

    申请人： Masayuki Motonari ,  Tomikazu Ueno ,  Masahiro Yamamoto ,  Yuugo Tai ,  Hiroyuki Miyauchi

    发明人： Masayuki Motonari ,  Tomikazu Ueno ,  Masahiro Yamamoto ,  Yuugo Tai ,  Hiroyuki Miyauchi

    IPC分类号： B24D11/00

    CPC分类号： B24B37/26

    摘要： A chemical mechanical polishing pad used for chemical mechanical polishing comprises a polishing surface, a non-polishing surface that is provided opposite to the polishing surface, a side surface that connects an outer edge of the polishing surface and an outer edge of the non-polishing surface, and a plurality of grooves formed in the polishing surface. The side surface has a slope surface that is connected to the polishing surface, and a depth of the grooves is equal to or smaller than a height of the slope surface.

    摘要翻译： 用于化学机械抛光的化学机械抛光垫包括抛光表面，与抛光表面相对设置的非抛光表面，将抛光表面的外边缘和非抛光外边缘连接的侧表面 表面和形成在抛光表面中的多个凹槽。 侧表面具有连接到抛光表面的倾斜表面，并且凹槽的深度等于或小于倾斜表面的高度。

    Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device
    8.
    发明授权
    Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device 有权
    半导体器件化学机械抛光和化学机械抛光方法的水分散体

    公开(公告)号：US08349207B2

    公开(公告)日：2013-01-08

    申请号：US12529545

    申请日：2008-02-20

    申请人： Taichi Matsumoto ,  Tomikazu Ueno ,  Michiaki Andou

    发明人： Taichi Matsumoto ,  Tomikazu Ueno ,  Michiaki Andou

    IPC分类号： C09K13/06

    CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

    摘要： A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

    摘要翻译： 化学机械研磨用水系分散体包含（A）由BET法测定的比表面积为10〜60nm计算出的平均粒径的胶体二氧化硅，（B）具有2个以上羧基的有机酸和1个以上 一个分子中的羟基，（C）由以下通式（1）表示的季铵化合物，其中R 1至R 4各自表示烃基，M-表示阴离子，化学机械研磨水分散体的pH为 3〜5。

    Chemical mechanical polishing pad
    9.
    发明授权
    Chemical mechanical polishing pad 有权
    化学机械抛光垫

    公开(公告)号：US08128464B2

    公开(公告)日：2012-03-06

    申请号：US12360967

    申请日：2009-01-28

    申请人： Masayuki Motonari ,  Tomikazu Ueno ,  Masahiro Yamamoto ,  Yuugo Tai ,  Hiroyuki Miyauchi

    发明人： Masayuki Motonari ,  Tomikazu Ueno ,  Masahiro Yamamoto ,  Yuugo Tai ,  Hiroyuki Miyauchi

    IPC分类号： B24D11/00

    CPC分类号： B24B37/26

    摘要： A chemical mechanical polishing pad used for chemical mechanical polishing comprises a polishing surface, a non-polishing surface that is provided opposite to the polishing surface, a side surface that connects an outer edge of the polishing surface and an outer edge of the non-polishing surface, and a plurality of grooves formed in the polishing surface. The side surface has a slope surface that is connected to the polishing surface, and a depth of the grooves is equal to or smaller than a height of the slope surface.

    摘要翻译： 用于化学机械抛光的化学机械抛光垫包括抛光表面，与抛光表面相对设置的非抛光表面，将抛光表面的外边缘和非抛光外边缘连接的侧表面 表面和形成在抛光表面中的多个凹槽。 侧表面具有连接到抛光表面的倾斜表面，并且凹槽的深度等于或小于倾斜表面的高度。