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1.发明申请NEGATIVE-TONE RADIATION-SENSITIVE COMPOSITION, CURED PATTERN FORMING METHOD, AND CURED PATTERN 审中-公开负离子辐射敏感组合物，固化图案形成方法和固化图案公开(公告)号：US20100167024A1
公开(公告)日：2010-07-01
申请号：US12647375
申请日：2009-12-24
申请人： Norihiro Natsume , Takanori Kishida , Hayato Namai , Kyoyu Yasuda , Satoshi Dei , Koichi Hasegawa
发明人： Norihiro Natsume , Takanori Kishida , Hayato Namai , Kyoyu Yasuda , Satoshi Dei , Koichi Hasegawa
CPC分类号： G03F7/0757 , Y10T428/24802
摘要： A negative-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer has a polystyrene-reduced weight average molecular weight of 4000 to 200,000, and is obtained by hydrolysis and condensation of at least one hydrolyzable silane compound among compounds shown by RaSi(OR1)4-a, Si(OR2)4 and R3x(R4O)3-xSi—(R7)z—Si(OR5)3-yR6y. “R” represents a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms. “R1” represents a monovalent organic group. “R2” represents a monovalent organic group. “R3” and “R6” individually represent a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms “R4” and “R5” individually represent a monovalent organic group. “R7” represents an oxygen atom, a phenylene group, or a group —(CH2)m—. The content of units derived from the compound RaSi(OR1)4-a is 50 to 100 mol % of the total units forming the polymer.
摘要翻译： 负色辐射敏感组合物包括聚合物，光致酸产生剂和溶剂。 聚苯乙烯换算的重均分子量为4000〜200,000，通过RaSi（OR1）4-a，Si（OR2）4和R3x（OR1）4-a表示的化合物中至少一种可水解硅烷化合物的水解和缩合得到， R4O）3-xSi-（R7）z-Si（OR5）3-yR6y。 “R”表示氟原子，烷基羰基氧基或碳原子数1〜5的直链或支链烷基。 “R1”表示一价有机基团。 “R2”表示一价有机基团。 “R3”和“R6”分别表示氟原子，烷基羰基氧基或碳原子数为1〜5的直链或支链烷基，“R4”和“R5”分别表示一价有机基团。 “R7”表示氧原子，亚苯基或基团 - （CH2）m-。 衍生自化合物RaSi（OR1）4-a的单元的含量为形成聚合物的总单元的50〜100摩尔％。
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2.发明授权Composition for formation of upper layer film, and method for formation of photoresist pattern 有权用于形成上层膜的组合物和形成光致抗蚀剂图案的方法公开(公告)号：US08895229B2
公开(公告)日：2014-11-25
申请号：US12445152
申请日：2007-10-11
CPC分类号： G03F7/11 , G03F7/2041
摘要： A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.
摘要翻译： 一种用于形成上层膜的组合物，其用于在光致抗蚀剂膜的表面上形成上层膜，并且其包含具有由以下通式（1-1）表示的重复单元的树脂（A），而不包含 具有由以下通式（1-2）表示的重复单元和具有由以下通式（1-2）表示的重复单元并且不具有由以下通式表示的重复单元的树脂（B） 1-1）。 [通式（1-1）和（1-2）中，R 1为氢等， R2是单键等; R3是具有1〜12个碳原子的氟取代的直链或支链烷基等。]组合物可以形成具有足够高的后退接触角的上层膜。
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3.发明申请Composition for forming antireflection film, laminate, and method for forming resist pattern 有权用于形成抗反射膜的组合物，层压体和形成抗蚀剂图案的方法公开(公告)号：US20060223008A1
公开(公告)日：2006-10-05
申请号：US11376146
申请日：2006-03-16
CPC分类号： G03F7/091 , G03F7/0046
摘要： An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.
摘要翻译： 提供了具有优异的涂布性的防反射膜形成组合物，其能够显着抑制微细微泡的产生并且能够形成具有足够降低的驻波效应的抗反射膜，并且在水和碱性显影剂中具有优异的溶解性。 该组合物包含在侧链上具有至少一个具有含羟基有机基团的聚合单元的聚合物，优选具有至少一个下式（2）的重复单元的共聚物和/或至少一种重复单元 下式（3）和至少一个下式（4）的重复单元和/或其盐：其中R 1和R 2代表氢原子 氟原子或一价有机基团，m为1-20的整数，A表示二价键合机构。
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4.发明授权Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method 有权用于形成上部抗反射膜的树脂，用于形成上部抗反射膜的组合物和抗蚀剂图案形成方法公开(公告)号：US08497062B2
公开(公告)日：2013-07-30
申请号：US12530624
申请日：2008-03-13
CPC分类号： G03F7/091 , C08F212/14 , C08F212/32 , C08F220/04 , C08F222/02 , C08F2220/382 , G03F7/0045
摘要： The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), R1 to R14 independently represent a hydrogen atom, —OH, —COOH or —SO3H, provided that all of R1 to R7 or R8 to R14 do not represent a hydrogen atom in a molecule.)
摘要翻译： 本发明的目的是提供一种用于形成上部抗反射膜的树脂和用于形成上部抗反射膜的组合物，其可以令人满意地降低驻波效应并且在平版印刷术中在碱性显影剂中导致优异的溶解度，以及形成 抗蚀图案 具体地说，用于形成上部抗反射膜的树脂具有选自由式（1）表示的重复单元和式（2）表示的重复单元中的至少一个单元，其重均分子量为1,000至100,000， 通过GPC法测量，并且可溶于碱性显影剂。 （式（1）和（2）中，R 1〜R 14独立地表示氢原子，-OH，-COOH或-SO 3 H，条件是R 1〜R 7或R 8〜R 14全部不在分子中表示氢原子 。）
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5.发明申请RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD 有权用于形成上层抗反射膜的树脂，用于形成上层抗反射膜的组合物和耐蚀图案形成方法公开(公告)号：US20100112475A1
公开(公告)日：2010-05-06
申请号：US12530624
申请日：2008-03-13
CPC分类号： G03F7/091 , C08F212/14 , C08F212/32 , C08F220/04 , C08F222/02 , C08F2220/382 , G03F7/0045
摘要： The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), R1 to R14 independently represent a hydrogen atom, —OH, —COOH or —SO3H, provided that all of R1 to R7 or R8 to R14 do not represent a hydrogen atom in a molecule.)
摘要翻译： 本发明的目的是提供一种用于形成上部抗反射膜的树脂和用于形成上部抗反射膜的组合物，其可以令人满意地降低驻波效应并且在平版印刷术中在碱性显影剂中导致优异的溶解度，以及形成 抗蚀图案 具体地说，用于形成上部抗反射膜的树脂具有选自由式（1）表示的重复单元和式（2）表示的重复单元中的至少一个单元，其重均分子量为1,000至100,000， 通过GPC法测量，并且可溶于碱性显影剂。 （式（1）和（2）中，R 1〜R 14独立地表示氢原子，-OH，-COOH或-SO 3 H，条件是R 1〜R 7或R 8〜R 14全部不在分子中表示氢原子 。）
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6.发明申请COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN 有权用于形成上层暴露的上层膜的组合物，用于浸没曝光的上层膜和形成光电子图案的方法公开(公告)号：US20100255416A1
公开(公告)日：2010-10-07
申请号：US12680200
申请日：2008-09-10
申请人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
发明人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
CPC分类号： G03F7/11 , G03F7/2041
摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].
摘要翻译： 本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。 还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。 用于形成上层膜的组合物包括树脂成分和溶剂。 树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式 （2-1）和（2-2）。 （1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。
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公开(公告)号：US06623907B2
公开(公告)日：2003-09-23
申请号：US09774714
申请日：2001-02-01
申请人： Jun Numata , Aki Suzuki , Hiromichi Hara , Norihiro Natsume , Kiyoshi Murata , Masafumi Yamamoto , Akimasa Soyano , Toru Kajita , Tsutomu Shimokawa
发明人： Jun Numata , Aki Suzuki , Hiromichi Hara , Norihiro Natsume , Kiyoshi Murata , Masafumi Yamamoto , Akimasa Soyano , Toru Kajita , Tsutomu Shimokawa
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038 , G03F7/039 , Y10S430/111 , Y10S430/128
摘要： A positive-tone radiation-sensitive resin composition comprising: (A) a low molecular weight compound having at least one amino group in which the nitrogen atom has at least one hydrogen atom bonded thereto and at least one of the hydrogen atoms is replaced by a t-butoxycarbonyl group, (B) a photoacid generator, and (C-1) a resin insoluble or scarcely soluble in alkali which is protected by an acid-dissociable group and becomes soluble in alkali when the acid-dissociable group dissociates or (C-2) an alkali-soluble resin and an alkali solubility control agent is disclosed. Also disclosed is a negative-tone radiation-sensitive resin composition comprising the low molecular weight compound (A), the photoacid generator (B), an alkali-soluble resin (D), and a compound capable of crosslinking with the alkali-soluble resin in the presence of an acid(E). The composition are useful as a chemically amplified resist which effectively responds to various radiations, exhibits superior sensitivity and resolution, forms fine patterns at a high precision and in a stable manner even if the patterns are isolated line patterns.
摘要翻译： 一种正色辐射敏感性树脂组合物，其包含：（A）具有至少一个氨基的低分子量化合物，其中所述氮原子具有与其键合的至少一个氢原子，并且至少一个氢原子被 叔丁氧基羰基，（B）光酸产生剂和（C-1）不溶于或几乎不溶于碱的树脂，其被酸解离基团保护并且当酸解离基解离时变得可溶于碱，或（C -2）碱溶性树脂和碱溶性控制剂。 还公开了包含低分子量化合物（A），光酸产生剂（B），碱溶性树脂（D）和能够与碱溶性树脂交联的化合物的负色辐射敏感性树脂组合物 在酸（E）的存在下。 该组合物可用作化学放大抗蚀剂，其有效地响应各种辐射，表现出优异的灵敏度和分辨率，即使图案是隔离线图案，也以高精度和稳定的方式形成精细图案。
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8.发明授权Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern 有权用于形成用于浸渍曝光的上层膜的组合物，用于浸渍曝光的上层膜，以及形成光致抗蚀剂图案的方法公开(公告)号：US08431332B2
公开(公告)日：2013-04-30
申请号：US12680200
申请日：2008-09-10
申请人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
发明人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
CPC分类号： G03F7/11 , G03F7/2041
摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].
摘要翻译： 本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。 还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。 用于形成上层膜的组合物包括树脂成分和溶剂。 树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式 （2-1）和（2-2）。 （1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。
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9.发明申请COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN 有权用于形成上层膜的组合物和形成光电子图案的方法公开(公告)号：US20100021852A1
公开(公告)日：2010-01-28
申请号：US12445152
申请日：2007-10-11
IPC分类号： G03F7/00 , C09D133/04
CPC分类号： G03F7/11 , G03F7/2041
摘要： A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.
摘要翻译： 一种用于形成上层膜的组合物，其用于在光致抗蚀剂膜的表面上形成上层膜，并且其包含具有由以下通式（1-1）表示的重复单元的树脂（A），而不包含 具有由以下通式（1-2）表示的重复单元和具有由以下通式（1-2）表示的重复单元并且不具有由以下通式表示的重复单元的树脂（B） 1-1）。 [通式（1-1）和（1-2）中，R 1为氢等， R2是单键等; R3是具有1〜12个碳原子的氟取代的直链或支链烷基等。]组合物可以形成具有足够高的后退接触角的上层膜。
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10.发明授权Composition for forming antireflection film, laminate, and method for forming resist pattern 有权用于形成抗反射膜的组合物，层压体和形成抗蚀剂图案的方法公开(公告)号：US07514205B2
公开(公告)日：2009-04-07
申请号：US11376146
申请日：2006-03-16
CPC分类号： G03F7/091 , G03F7/0046
摘要： An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.
摘要翻译： 提供了具有优异的涂布性的防反射膜形成组合物，其能够显着抑制微细微泡的产生并且能够形成具有足够降低的驻波效应的抗反射膜，并且在水和碱性显影剂中具有优异的溶解性。 该组合物包含在侧链上具有至少一个具有含羟基有机基团的聚合单元的聚合物，优选具有至少一个下式（2）的重复单元的共聚物和/或至少一种重复单元 下式（3）和至少一个下式（4）的重复单元和/或其盐：其中R 1和R 2表示氢原子，氟原子或一价有机基团，m是 1-20，A表示二价键合装置。
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