公开(公告)号：US20100255299A1

公开(公告)日：2010-10-07

申请号：US12752403

申请日：2010-04-01

Applicant: Noriyoshi KAWASHIMA ,  Fumiteru ASAI

Inventor： Noriyoshi KAWASHIMA ,  Fumiteru ASAI

IPC: C09J7/02 ,  C09J5/06

CPC classification number: H01L21/6836 ,  B32B3/28 ,  B32B3/30 ,  B32B7/06 ,  B32B25/042 ,  B32B25/06 ,  B32B25/08 ,  B32B25/14 ,  B32B27/08 ,  B32B27/10 ,  B32B27/16 ,  B32B27/18 ,  B32B27/20 ,  B32B27/22 ,  B32B27/283 ,  B32B27/302 ,  B32B27/304 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B29/06 ,  B32B2255/10 ,  B32B2255/12 ,  B32B2255/26 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/50 ,  B32B2307/748 ,  B32B2405/00 ,  C09J7/29 ,  C09J2203/326 ,  C09J2467/006 ,  H01L21/67132 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  Y10T428/2848

Abstract: The present invention provides a method of applying a pressure-sensitive adhesive sheet for semiconductor wafer protection, the method including applying to a surface of a semiconductor wafer a pressure-sensitive adhesive sheet for semiconductor wafer protection including a substrate, at least one interlayer, and a pressure-sensitive adhesive layer superposed in this order, in which the pressure-sensitive adhesive sheet is applied to the semiconductor wafer at an application temperature in the range of from 50° C. to 100° C. and the interlayer in contact with the pressure-sensitive adhesive layer has a loss tangent (tan δ) of 0.5 or larger at the application temperature.

Abstract translation: 本发明提供一种涂布半导体晶片保护用粘合片的方法，该方法包括向半导体晶片的表面施加用于半导体晶片保护的压敏粘合片，包括基板，至少一层，以及 粘合剂层按照该顺序重叠，其中将压敏粘合片在50℃至100℃的范围内施加到半导体晶片上，并且与 压敏粘合剂层在施加温度下的损耗角正切（tanδ）为0.5以上。

公开(公告)号：US20110008597A1

公开(公告)日：2011-01-13

申请号：US12834541

申请日：2010-07-12

Applicant: Fumiteru ASAI ,  Takatoshi SASAKI ,  Noriyoshi KAWASHIMA

Inventor： Fumiteru ASAI ,  Takatoshi SASAKI ,  Noriyoshi KAWASHIMA

IPC: C09J7/02 ,  B32B7/02

CPC classification number: H01L21/6836 ,  C09J7/20 ,  C09J2201/36 ,  C09J2203/326 ,  H01L21/6835 ,  H01L2221/68327 ,  Y10T428/2495 ,  Y10T428/26 ,  Y10T428/28 ,  Y10T428/2809 ,  Y10T428/2891

Abstract: A surface protective sheet comprises an adhesive layer having a plurality of layers on one side of a base film, the adhesive layer having a 25° C. storage elastic modulus of 10 to 100 MPa, and an adhesive strength with respect to a silicon mirror wafer of 1.0 N/20 mm or less at peeling off the surface protective sheet. The surface protective sheet is used for a semiconductor wafer having a protruding electrode of 10 to 150 μm height on its surface.

Abstract translation: 表面保护片包括在基膜的一侧具有多层的粘合剂层，所述粘合层具有10℃至100MPa的25℃的储能弹性模量和相对于硅镜晶片的粘合强度 在剥离表面保护片时为1.0N / 20mm以下。 表面保护片用于其表面上具有10至150μm高的突出电极的半导体晶片。