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1.发明申请公开(公告)号：US20100255299A1
公开(公告)日：2010-10-07
申请号：US12752403
申请日：2010-04-01
Applicant: Noriyoshi KAWASHIMA , Fumiteru ASAI
Inventor： Noriyoshi KAWASHIMA , Fumiteru ASAI
CPC classification number: H01L21/6836 , B32B3/28 , B32B3/30 , B32B7/06 , B32B25/042 , B32B25/06 , B32B25/08 , B32B25/14 , B32B27/08 , B32B27/10 , B32B27/16 , B32B27/18 , B32B27/20 , B32B27/22 , B32B27/283 , B32B27/302 , B32B27/304 , B32B27/306 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B29/06 , B32B2255/10 , B32B2255/12 , B32B2255/26 , B32B2270/00 , B32B2274/00 , B32B2307/50 , B32B2307/748 , B32B2405/00 , C09J7/29 , C09J2203/326 , C09J2467/006 , H01L21/67132 , H01L21/6835 , H01L2221/68327 , H01L2221/6834 , Y10T428/2848
Abstract: The present invention provides a method of applying a pressure-sensitive adhesive sheet for semiconductor wafer protection, the method including applying to a surface of a semiconductor wafer a pressure-sensitive adhesive sheet for semiconductor wafer protection including a substrate, at least one interlayer, and a pressure-sensitive adhesive layer superposed in this order, in which the pressure-sensitive adhesive sheet is applied to the semiconductor wafer at an application temperature in the range of from 50° C. to 100° C. and the interlayer in contact with the pressure-sensitive adhesive layer has a loss tangent (tan δ) of 0.5 or larger at the application temperature.
Abstract translation: 本发明提供一种涂布半导体晶片保护用粘合片的方法，该方法包括向半导体晶片的表面施加用于半导体晶片保护的压敏粘合片，包括基板，至少一层，以及 粘合剂层按照该顺序重叠，其中将压敏粘合片在50℃至100℃的范围内施加到半导体晶片上，并且与 压敏粘合剂层在施加温度下的损耗角正切（tanδ）为0.5以上。
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公开(公告)号：US20110008597A1
公开(公告)日：2011-01-13
申请号：US12834541
申请日：2010-07-12
Applicant: Fumiteru ASAI , Takatoshi SASAKI , Noriyoshi KAWASHIMA
Inventor： Fumiteru ASAI , Takatoshi SASAKI , Noriyoshi KAWASHIMA
CPC classification number: H01L21/6836 , C09J7/20 , C09J2201/36 , C09J2203/326 , H01L21/6835 , H01L2221/68327 , Y10T428/2495 , Y10T428/26 , Y10T428/28 , Y10T428/2809 , Y10T428/2891
Abstract: A surface protective sheet comprises an adhesive layer having a plurality of layers on one side of a base film, the adhesive layer having a 25° C. storage elastic modulus of 10 to 100 MPa, and an adhesive strength with respect to a silicon mirror wafer of 1.0 N/20 mm or less at peeling off the surface protective sheet. The surface protective sheet is used for a semiconductor wafer having a protruding electrode of 10 to 150 μm height on its surface.
Abstract translation: 表面保护片包括在基膜的一侧具有多层的粘合剂层，所述粘合层具有10℃至100MPa的25℃的储能弹性模量和相对于硅镜晶片的粘合强度 在剥离表面保护片时为1.0N / 20mm以下。 表面保护片用于其表面上具有10至150μm高的突出电极的半导体晶片。
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公开(公告)号：US20120056338A1
公开(公告)日：2012-03-08
申请号：US13223629
申请日：2011-09-01
Applicant: Takashi HABU , Fumiteru ASAI , Tomokazu TAKAHASHI , Eiichi IMOTO , Yuta SHIMAZAKI
Inventor： Takashi HABU , Fumiteru ASAI , Tomokazu TAKAHASHI , Eiichi IMOTO , Yuta SHIMAZAKI
IPC: H01L23/29
CPC classification number: H01L21/67132 , C08G18/4854 , C08G18/672 , C08G18/757 , C08G2170/40 , C09J7/10 , C09J175/16 , C09J2203/326 , C09J2475/00 , C08G18/48
Abstract: The present invention provides a pressure-sensitive adhesive sheet for protecting a semiconductor wafer, which does not cause curve (warpage) in the semiconductor wafer, when the semiconductor wafer is ground, is excellent in followability to a pattern, has adequate stress dispersibility in a grinding operation, suppresses the crack in a wafer and chipping in a wafer edge, and does not leave a residue of a tackiness agent on the surface of the wafer. The protective sheet has one face having tackiness, does not have an interface existing between a substrate and the tackiness agent and is made of one layer, and the pressure-sensitive adhesive sheet has different tack strengths on both faces from each other.
Abstract translation: 本发明提供一种用于保护半导体晶片的压敏粘合片，其在半导体晶片被研磨时不引起半导体晶片的弯曲（翘曲），对图案的追随性优异，在 研磨操作，抑制晶片中的裂纹和晶片边缘的碎裂，并且不会在晶片的表面上留下粘合剂残留物。 保护片具有一个具有粘性的面，在基材和粘合剂之间不存在界面，并且由一层制成，并且该粘合片在两个表面上具有不同的粘着强度。
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4.发明申请DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 失效用于半导体背面的双面贴合膜及其半导体器件的制造方法公开(公告)号：US20120028418A1
公开(公告)日：2012-02-02
申请号：US13191697
申请日：2011-07-27
Applicant: Fumiteru ASAI , Goji SHIGA , Naohide TAKAMOTO
Inventor： Fumiteru ASAI , Goji SHIGA , Naohide TAKAMOTO
CPC classification number: B32B7/06 , B32B7/02 , B32B7/12 , C09J7/20 , C09J201/00 , H01L21/563 , H01L21/68 , H01L21/6836 , H01L24/81 , H01L24/83 , H01L2221/68327 , H01L2221/68377 , H01L2223/54486 , H01L2224/131 , H01L2224/13111 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/8101 , H01L2224/81815 , H01L2224/83007 , H01L2224/83104 , H01L2924/12042 , Y10T428/24942 , Y10T428/26 , H01L2924/00014 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00
Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.
Abstract translation: 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带， 在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜， 第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。
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5.发明申请FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, PROCESS FOR PRODUCING STRIP FILM FOR SEMICONDUCTOR BACK SURFACE, AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE 审中-公开片状薄膜半导体背面薄膜，半导体背面薄膜生产工艺及片状薄膜半导体器件公开(公告)号：US20120028050A1
公开(公告)日：2012-02-02
申请号：US13191574
申请日：2011-07-27
Applicant: Goji SHIGA , Naohide TAKAMOTO , Fumiteru ASAI
Inventor： Goji SHIGA , Naohide TAKAMOTO , Fumiteru ASAI
IPC: B32B27/38 , C08L63/06 , C08L77/06 , C08L67/02 , C08L69/00 , C08L71/10 , C08L63/04 , C08L63/02 , C08L79/08 , C08L61/08 , C08L31/04 , C08L33/08 , C08L33/02 , C08L7/00 , C08L11/00 , C08L9/00 , C08L23/22 , C08L33/14 , C08L35/02 , C08L43/02 , B26D3/00
CPC classification number: C08G59/621 , B32B27/38 , C08K3/36 , C08L63/00 , C09J163/00 , H01L2224/16225 , Y10T83/04 , Y10T428/31511
Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface having a ratio of A/B falling within a range of 1 to 8×103 (%/GPa), in which A is an elongation ratio (%) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing and B is a tensile storage modulus (GPa) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing.
Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在连接到被粘物上的半导体元件倒装芯片的背面上，该倒装芯片型半导体背表面的膜具有A / B比 在1〜8×10 3（％/ GPa）的范围内，其中A是在热固化之前的23℃下的倒装芯片型半导体背表面的膜的伸长率（％），B是拉伸储能模量 （GPa），用于倒装芯片型半导体背表面，在23℃下热固化。
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Patent Agency Ranking
6.发明申请FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND FLIP CHIP TYPE SEMICONDUCTOR DEVICE 有权用于倒圆片型半导体背表面的薄膜，用于半导体背面的双面复合薄膜，用于制造半导体器件的方法和片状芯片型半导体器件公开(公告)号：US20120025400A1
公开(公告)日：2012-02-02
申请号：US13191791
申请日：2011-07-27
Applicant: Yusuke KOMOTO , Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
Inventor： Yusuke KOMOTO , Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
IPC: H01L23/48 , B32B27/00 , C09J133/12 , C09J11/02 , C09J163/00 , C09J171/10 , H01L21/78 , B32B7/12
CPC classification number: H01L23/3157 , C09J163/00 , H01L21/563 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2221/68336 , H01L2221/68386 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/73204 , H01L2224/81007 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , Y10T428/31504 , H01L2924/00014 , H01L2924/01083 , H01L2224/13099 , H01L2924/00
Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.
Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在半导体元件倒装芯片的背面上，该半导体元件倒装芯片连接到被粘物上，其中在热固化之前用于倒装芯片型半导体背表面的膜， 其热固化，体积收缩率在23℃至165℃的范围内为100ppm /℃至400ppm /℃。
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7.发明申请THERMALLY RELEASABLE SHEET-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, METHOD OF COLLECTING SEMICONDUCTOR ELEMENT, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权用于半导体背面的热可释放片材集合膜，收集半导体元件的方法和制造半导体器件的方法公开(公告)号：US20120028442A1
公开(公告)日：2012-02-02
申请号：US13190664
申请日：2011-07-26
Applicant: Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
Inventor： Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
CPC classification number: C09J5/06 , C09J7/22 , C09J7/29 , C09J7/38 , C09J2201/36 , C09J2203/326 , C09J2205/102 , C09J2205/11 , C09J2205/302 , H01L21/563 , H01L21/6836 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2221/68381 , H01L2223/54433 , H01L2223/54486 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16238 , H01L2224/73204 , H01L2224/81193 , H01L2224/81203 , H01L2224/81911 , H01L2224/83104 , H01L2924/10253 , Y10T428/25 , Y10T428/31504 , H01L2924/00014 , H01L2924/01082 , H01L2924/0103 , H01L2924/01083 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00
Abstract: The present invention relates to a thermally releasable sheet-integrated film for semiconductor back surface, which includes: a pressure-sensitive adhesive sheet including a base material layer and a pressure-sensitive adhesive layer, and a film for semiconductor back surface formed on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet, in which the pressure-sensitive adhesive sheet is a thermally releasable pressure-sensitive adhesive sheet whose peel force from the film for semiconductor back surface decreases upon heating.
Abstract translation: 本发明涉及一种用于半导体背表面的可热分解的片状集成膜，其包括：包含基材层和压敏粘合剂层的压敏粘合片，以及在压力下形成的半导体背面的膜 粘合片的粘合片的粘合剂层，其中粘合片是其半导体背面的膜的剥离力在加热时降低的可热剥离的压敏粘合片。
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8.发明申请FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, AND DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE 审中-公开用于倒片芯片型半导体背表面的薄膜和用于半导体背面的双面胶带公开(公告)号：US20120021174A1
公开(公告)日：2012-01-26
申请号：US13170669
申请日：2011-06-28
Applicant: Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
Inventor： Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI
CPC classification number: H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2221/68377 , H01L2223/5448 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/81007 , H01L2224/81097 , H01L2224/81193 , H01L2224/81815 , H01L2224/83102 , H01L2224/8391 , H01L2924/00013 , H01L2924/14 , Y10T428/24355 , Y10T428/31504 , H01L2924/00014 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/0103 , H01L2924/01083 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, wherein said film has, on one surface thereof where said film does not face the back surface of the semiconductor element when said film is formed on the back surface of the semiconductor element, a surface roughness (Ra) within a range of from 50 nm to 3 μm before curing.
Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在与被粘物相连的半导体元件倒装芯片的背面上，其中所述薄膜在其一个表面上没有所述薄膜不面向背面 当在半导体元件的背面上形成所述膜时，半导体元件的表面，固化前的表面粗糙度（Ra）在50nm〜3μm的范围内。
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9.发明申请ADHESIVE SHEET FOR SUPPORTING AND PROTECTING SEMICONDUCTOR WAFER AND METHOD FOR GRINDING BACK OF SEMICONDUCTOR WAFER 审中-公开用于支持和保护半导体波形的粘合片和用于研磨半导体晶片的方法公开(公告)号：US20110030882A1
公开(公告)日：2011-02-10
申请号：US12852135
申请日：2010-08-06
Applicant: Kouji MIZUNO , Fumiteru ASAI , Takatoshi SASAKI
Inventor： Kouji MIZUNO , Fumiteru ASAI , Takatoshi SASAKI
CPC classification number: H01L21/6836 , B32B37/1284 , B32B38/164 , B32B2309/02 , B32B2309/105 , B32B2310/0806 , B32B2310/0831 , C09J7/29 , C09J2203/326 , C09J2433/00 , H01L2221/6834 , Y10T428/24959
Abstract: An adhesive sheet for supporting and protecting a semiconductor wafer has an intermediate layer and an adhesive layer formed on a one side of a base film in this order, the adhesive layer being made of a radiation curing type adhesive, and having a thickness of 1 to 50 μm and a shear stress of 0.5 to 10 MPa, the intermediate layer having a thickness of 10 to 500 μm and an elastic modulus of 0.01 to 3 MPa. The adhesive sheet of the present invention is useful in the broader application such as an adhesive sheet for affixing a wafer and for protecting a wafer, and the like in various steps of working the semiconductor wafers, that needs re-peelable.
Abstract translation: 用于支撑和保护半导体晶片的粘合片具有依次形成在基膜的一侧上的中间层和粘合剂层，所述粘合剂层由辐射固化型粘合剂制成，并且具有1至 50μm，剪切应力为0.5〜10MPa，中间层的厚度为10〜500μm，弹性模量为0.01〜3MPa。 本发明的粘合片可用于更广泛的应用，例如用于固定晶片和用于保护晶片的粘合片等，在需要重新剥离的各种半导体晶片的加工步骤中。
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公开(公告)号：US20120070658A1
公开(公告)日：2012-03-22
申请号：US13232716
申请日：2011-09-14
Applicant: Shinsuke IKISHIMA , Takashi HABU , Fumiteru ASAI , Kooki OOYAMA , Tadao TORII , Katsutoshi KAMEI , Yuuki KATOU , Tomokazu TAKAHASHI
Inventor： Shinsuke IKISHIMA , Takashi HABU , Fumiteru ASAI , Kooki OOYAMA , Tadao TORII , Katsutoshi KAMEI , Yuuki KATOU , Tomokazu TAKAHASHI
CPC classification number: H01L21/67132 , B32B27/306 , B32B27/327 , B32B2250/24 , B32B2250/246 , B32B2405/00 , B32B2457/14 , C09J7/29 , C09J2201/162 , C09J2201/622 , C09J2203/326 , C09J2423/106 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68386 , Y10T428/2848
Abstract: A pressure-sensitive adhesive tape according to an embodiment of the present invention includes, a heat-resistant layer; a base layer; and a pressure-sensitive adhesive layer in this order, wherein: the pressure-sensitive adhesive tape has an elastic modulus, i.e., Young's modulus at 25° C. of 150 MPa or less; and the heat-resistant layer contains a polypropylene-based resin polymerized by using a metallocene catalyst, the polypropylene-based resin having a melting point of 110° C. to 200° C. and a molecular weight distribution “Mw/Mn” of 3 or less.
Abstract translation: 根据本发明实施例的压敏粘合带包括耐热层; 基层; 和粘合剂层，其中：压敏粘合带具有弹性模量，即25℃下的杨氏模量为150MPa以下; 耐热层含有通过使用金属茂催化剂聚合的聚丙烯系树脂，该聚丙烯系树脂的熔点为110℃〜200℃，分子量分布“Mw / Mn”为3 或更少。
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