公开(公告)号：US07022991B2

公开(公告)日：2006-04-04

申请号：US10170292

申请日：2002-06-12

申请人： Norman William Schubring ,  Joseph Vito Mantese ,  Adolph Louis Micheli ,  Gregory William Auner ,  Ratna Naik

发明人： Norman William Schubring ,  Joseph Vito Mantese ,  Adolph Louis Micheli ,  Gregory William Auner ,  Ratna Naik

IPC分类号： G01J5/00

CPC分类号： G01J5/34

摘要： A pyroelectric sensor having an active regulation for maximizing pyroelectric sensor sensitivity is disclosed. The pyroelectric sensor comprises a ferroelectric transducer, and a regulator. The ferroelectric transducer may either be a homogenous ferroelectric transducer, a compositionally graded ferroelectric transducer, or an externally graded ferroelectric transducer. The regulator may either be an excitation regulator or a temperature regulator. A method for regulating the excitation or the temperature of a pyroelectric sensor for maximizing sensitivity of the pyroelectric sensor is also disclosed.

公开(公告)号：US06935158B2

公开(公告)日：2005-08-30

申请号：US10472988

申请日：2001-03-16

申请人： Flaminia Serina ,  Gregory W. Auner ,  Ka Yuen Simon Ng ,  Ratna Naik

发明人： Flaminia Serina ,  Gregory W. Auner ,  Ka Yuen Simon Ng ,  Ratna Naik

IPC分类号： G01N27/22 ,  G01N27/00 ,  G01N27/414 ,  G01N33/00 ,  H01L29/78 ,  H01L41/08

CPC分类号： G01N33/005

摘要： Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AlN) as the “insulator” in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AlN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AlN/Si and Pd/AlN/SiC wherein the SiC is preferably 6H—SiC.

摘要翻译： 氢气传感器采用在具有薄金属栅电极的MIS结构中的作为“绝缘体”的热力学稳定形式的氮化铝（AlN）的外延层，该薄金属栅电极适于在半导体衬底上催化解离氢例如钯。 AlN通过称为等离子体源分子束外延（PSMBE）的低温技术沉积。 当使用硅（Si）半导体衬底时，器件的电气特性是正常非线性MIS电容器的电气特性。 当使用碳化硅（SiC）时，器件的电气特性是整流二极管的电气特性。 优选的结构是Pd / AlN / Si和Pd / AlN / SiC，其中SiC优选为6H-SiC。

公开(公告)号：US06853075B2

公开(公告)日：2005-02-08

申请号：US10353756

申请日：2003-01-28

申请人： Gregory W. Auner ,  Ratna Naik ,  Simon Ng ,  Gary W. Abrams ,  James Patrick McCallister ,  Raymond Iezzi

发明人： Gregory W. Auner ,  Ratna Naik ,  Simon Ng ,  Gary W. Abrams ,  James Patrick McCallister ,  Raymond Iezzi

IPC分类号： B23K35/36 ,  G01N29/02 ,  G01N29/24 ,  G01N29/34 ,  G11B5/855 ,  H01F1/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/44 ,  H01L23/48 ,  H01L31/00 ,  H01L51/00 ,  H01L51/10

CPC分类号： B23K35/36 ,  A61F9/08 ,  A61F2002/30701 ,  A61F2002/3084 ,  A61F2002/3097 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/855 ,  H01F1/009 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02631 ,  H01L51/0595 ,  H01L51/102 ,  Y10S977/816 ,  Y10S977/889

摘要： A self-assembled nanobump array structure including a semi-absorbing outer layer provided on at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer, in which the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.

摘要翻译： 一种自组装纳豆块阵列结构，包括设置在至少一个纳米块形成衬底层上的半吸收外层，所述半吸收外层被配置为缓慢烧蚀以允许所施加的激光能量传递到所述至少一个纳米块 其中通过在所述至少一个纳米块形成衬底层中发生的能量和压力积聚形成所述自组装纳豆块阵列结构。

公开(公告)号：US20050074970A1

公开(公告)日：2005-04-07

申请号：US10472988

申请日：2001-03-16

申请人： Flaminia Serina ,  Gregory Auner ,  Ka Ng ,  Ratna Naik

发明人： Flaminia Serina ,  Gregory Auner ,  Ka Ng ,  Ratna Naik

IPC分类号： G01N27/22 ,  G01N27/00 ,  G01N27/414 ,  G01N33/00 ,  H01L29/78 ,  H01L21/44

CPC分类号： G01N33/005

摘要： Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AlN) as the “insulator” in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AlN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AlN/Si and Pd/AlN/SiC wherein the SiC is preferably 6H—SiC.

摘要翻译： 氢气传感器采用在具有薄金属栅电极的MIS结构中的作为“绝缘体”的热力学稳定形式的氮化铝（AlN）的外延层，该薄金属栅电极适于在半导体衬底上催化解离氢，例如钯。 AlN通过称为等离子体源分子束外延（PSMBE）的低温技术沉积。 当使用硅（Si）半导体衬底时，器件的电气特性是正常非线性MIS电容器的电气特性。 当使用碳化硅（SiC）时，器件的电气特性是整流二极管的电气特性。 优选的结构是Pd / AlN / Si和Pd / AlN / SiC，其中SiC优选为6H-SiC。