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公开(公告)号：US11189554B2
公开(公告)日：2021-11-30
申请号：US16547960
申请日：2019-08-22
发明人： Shiro Okada , Mie Matsuo , Hiroshi Yamashita , Shinsuke Nabeya , Kenichi Kataoka
IPC分类号： H01L23/498 , H01J37/147 , H01J37/317
摘要： A semiconductor device according to the embodiments includes: a first substrate having a plurality of first through-holes; a plurality of first electrodes provided on the first substrate to be adjacent to the respective first through-holes; a plurality of second electrodes provided on the first substrate to be adjacent to the respective first through-holes and to face the respective first electrodes; and a second substrate provided to face the first substrate, the second substrate having a plurality of second through-holes facing the respective first through-holes, at least a surface of the second substrate facing the first substrate having conductivity, the second substrate being electrically connected to the second electrodes.
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公开(公告)号：US09530616B2
公开(公告)日：2016-12-27
申请号：US14857095
申请日：2015-09-17
IPC分类号： G21K5/04 , H01J37/317
CPC分类号： H01J37/3174 , H01J37/045 , H01J37/3177 , H01J2237/0435 , H01J2237/31774
摘要： In one embodiment, a blanking aperture array includes a substrate including an upper surface on which an insulating film is provided, a plurality of blanking aperture portions provided in the substrate, each of the plurality of blanking aperture portions including one of penetration holes, through which a predetermined beam passes, and one of blanking electrodes and one of ground electrodes which are provided on the insulating film, and the blanking electrodes and the ground electrodes configured to perform blanking deflection of the predetermined beam, and a high-resistivity film provided so as to cover the insulating film and at least part of the ground electrodes, the high-resistivity film having an electric resistance that is higher than an electric resistance of the ground electrodes and lower than an electric resistance of the insulating film.
摘要翻译： 在一个实施例中，消隐孔阵列包括：衬底，其包括设置绝缘膜的上表面;设置在衬底中的多个消隐孔部，多个消隐孔部分中的每一个包括一个穿透孔， 预定的光束通过，并且设置在绝缘膜上的消隐电极和接地电极之一以及被配置为执行预定光束的消隐偏转的消隐电极和接地电极以及设置为如下的高电阻膜 覆盖绝缘膜和至少一部分接地电极，高电阻膜具有高于接地电极的电阻并低于绝缘膜的电阻的电阻。
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公开(公告)号：US11355302B2
公开(公告)日：2022-06-07
申请号：US17169782
申请日：2021-02-08
IPC分类号： H01J37/20 , H01J37/04 , H01J37/147
摘要： In one embodiment, a multi-beam blanking device includes a semiconductor substrate, an insulating film that is disposed on the semiconductor substrate, an antistatic film that is disposed on the insulating film, a plurality of cells each of which is related to a through-hole that penetrate the semiconductor substrate and the insulating film and each of which includes a blanking electrode and a ground electrode that are disposed on the insulating film, and a ground wiring line that is disposed in the insulating film. The antistatic film and the ground wiring line are connected to each other at a joint that extends through the insulating film on the ground wiring line.
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公开(公告)号：US09880215B2
公开(公告)日：2018-01-30
申请号：US14836065
申请日：2015-08-26
发明人： Hiroshi Yamashita
IPC分类号： G01R31/14 , G01R31/02 , H01J37/317 , H01J37/04
CPC分类号： G01R31/025 , H01J37/045 , H01J37/3177 , H01J2237/0435 , H01J2237/24514
摘要： An inspection method for a blanking device for multi-beams, for inspecting whether a separate blanking system of the blanking device is defective, includes, using the blanking device, measuring a value of current flowing from a power source for supplying voltage based on a difference between a first potential and a second potential to each of a plurality of separate blanking systems, in a state where the first potential is applied to a first electrode from a first potential applying unit and the second potential is applied to a second electrode from a corresponding second potential applying unit in at least one second potential applying unit in each of a plurality of separate blanking systems of the blanking device, and determining, when a measured current value is a finite value and equal to or below a preset threshold, that a separate blanking system where a short circuit has occurred exists.
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公开(公告)号：US10283316B2
公开(公告)日：2019-05-07
申请号：US15665853
申请日：2017-08-01
IPC分类号： H01J37/244 , H01J37/30 , H01J37/317 , H01J37/153
摘要： In one embodiment, an aperture for inspecting a multi-beam allows passage of one beam among multi-beams applied in a multi-beam writing apparatus. The aperture includes a scattering layer that is provided with a through-hole through which the one beam passes, and by which the other beams are scattered, and an absorbing layer that is provided with an opening having a diameter greater than the diameter of the through-hole and that absorbs at least some of the beams entering it.
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公开(公告)号：US20190051494A1
公开(公告)日：2019-02-14
申请号：US16057153
申请日：2018-08-07
发明人： Hiroshi Yamashita
IPC分类号： H01J37/317 , H01J37/09 , H01J37/04
摘要： In one embodiment, a multi charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a shaping aperture array member having a plurality of first apertures, and allowing the charged particle beam to pass through the first apertures to form multiple beams, an X-ray shielding plate having a plurality of second apertures through each of which a corresponding one of the multiple beams that have passed through the first apertures passes, and a blanking aperture array member having a plurality of third apertures through each of which a corresponding one of the multiple beams that have passed through the first apertures and the second apertures passes, the blanking aperture array member including a blanker performing blanking deflection on the corresponding beam. The X-ray shielding plate blocks X-rays produced by irradiation of the shaping aperture array member with the charged particle beam.
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公开(公告)号：US09805905B2
公开(公告)日：2017-10-31
申请号：US14838907
申请日：2015-08-28
IPC分类号： H01J37/04
CPC分类号： H01J37/045 , H01J37/1471 , H01J37/20 , H01J37/3026 , H01J37/3177 , H01J2237/043 , H01J2237/0435 , H01J2237/20292 , H01J2237/30483 , H01J2237/3175
摘要： A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential.
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8.发明申请公开(公告)号：US20160284510A1
公开(公告)日：2016-09-29
申请号：US15056300
申请日：2016-02-29
发明人： Shigehiro HARA , Kenichi Yasui , Hiroshi Yamashita , Yasuo Kato , Saori Gomi , Shinji Sakamoto , Takao Tamura , Hideo Tsuchiya , Noriaki Nakayamada , Hironobu Matsumoto
IPC分类号： H01J37/302 , H01J37/317 , H01J37/24
CPC分类号： H01J37/3026 , H01J37/3174 , H01J2237/31762 , H01J2237/31776
摘要： In one embodiment, a charged particle beam drawing apparatus includes a drawing unit that draws a pattern in a drawing area on a substrate and a control processing circuitry that controls the drawing unit via a process including receiving drawing data with a hierarchical correction map input to the control processing circuitry, the drawing data with the hierarchical map including a plurality of files in which division maps are respectively described in files in units of subframes, each division map including dose information associated with corresponding one of blocks of the drawing area, and the process further including generating shot data by performing a data conversion process on the drawing data, reading a division map corresponding to a block in the area to be drawn from the hierarchical correction map, calculating a dose, and controlling the drawing unit based on the shot data and the calculated dose.
摘要翻译： 在一个实施例中，带电粒子束描绘装置包括绘制单元，其绘制在基板上的绘图区域中的图案;以及控制处理电路，控制处理电路通过包括接收绘图数据的处理来控制绘图单元，该处理包括输入到 控制处理电路，具有包括多个文件的分层映射的绘图数据，其中分割图分别以子帧为单位在文件中描述，每个分割映射包括与绘图区域的对应的一个块相关联的剂量信息，以及处理 进一步包括通过对绘图数据进行数据转换处理来生成拍摄数据，读取与从分层校正图中绘出的区域中的块对应的分割图，计算剂量，以及基于拍摄数据控制绘制单位 和计算剂量。
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公开(公告)号：US20200091056A1
公开(公告)日：2020-03-19
申请号：US16547960
申请日：2019-08-22
发明人： Shiro Okada , Mie Matsuo , Hiroshi Yamashita , Shinsuke Nabeya , Kenichi Kataoka
IPC分类号： H01L23/498 , H01J37/317 , H01J37/147
摘要： A semiconductor device according to the embodiments includes: a first substrate having a plurality of first through-holes; a plurality of first electrodes provided on the first substrate to be adjacent to the respective first through-holes; a plurality of second electrodes provided on the first substrate to be adjacent to the respective first through-holes and to face the respective first electrodes; and a second substrate provided to face the first substrate, the second substrate having a plurality of second through-holes facing the respective first through-holes, at least a surface of the second substrate facing the first substrate having conductivity, the second substrate being electrically connected to the second electrodes.
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公开(公告)号：US10211023B2
公开(公告)日：2019-02-19
申请号：US15854303
申请日：2017-12-26
IPC分类号： H01J37/30 , H01J37/31 , H01J37/09 , H01J37/317
摘要： In one embodiment, an aperture set for a multi-beam includes a shaping aperture array in which a plurality of first openings are formed, a region including the plurality of first openings is irradiated with a charged particle beam discharged from a discharge unit, and portions of the charged particle beam pass through the plurality of respective first openings to form a multi-beam, a first shield plate in which a plurality of second openings is formed, through which a corresponding beam in the multi-beam, which passes through the plurality of first openings, passes, and a blanking aperture array in which a plurality of third openings is formed, through which a corresponding beam in the multi-beam, which passes through the plurality of first openings and the plurality of second openings, passes. The second openings are wider than the first openings.
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