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公开(公告)号：US12009174B2
公开(公告)日：2024-06-11
申请号：US17651278
申请日：2022-02-16
发明人： Kazuhiro Kishi , Munehiro Ogasawara
IPC分类号： H01J37/04 , H01J37/26 , H01J37/317
CPC分类号： H01J37/045 , H01J37/3174 , H01J37/26 , H01J2237/0435
摘要： A blanking deflector according to an embodiment includes: a first electrode comprising a first insulator, a first material film coating all surfaces of the first insulator and having lower resistance than the first insulator, and a first low-resistance film coating part or all of surfaces of the first material film and having lower resistance than the first material film; and a second electrode comprising a second insulator, a second material film coating all surfaces of the second insulator and having lower resistance than the second insulator, and a second low-resistance film coating part or all of surfaces of the second material film and having lower resistance than the second material film, wherein the blanking deflector controls whether to irradiate a specimen with a charged particle beam by causing the charged particle beam to pass between the first electrode and the second electrode.
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2.发明授权公开(公告)号：US10784081B2
公开(公告)日：2020-09-22
申请号：US16854405
申请日：2020-04-21
发明人： Munehiro Ogasawara
IPC分类号： H01J37/317 , H01J37/30 , H01J37/06 , H01J37/12 , H01J37/147
摘要： A charged particle beam lithography apparatus, includes a plurality of multiple-beam sets, each of which including a plurality of irradiation sources each generating an independent charged particle beam, a plurality of objective deflectors, each arranged for a corresponding charged particle beam, and configured to deflect the corresponding charged particle beam to a desired position on a substrate, and a plurality of electrostatic or electromagnetic lens fields each to focus the corresponding charged particle beam on the target object; a plurality of common deflection amplifiers, arranged for each multiple-beam set, and each of the plurality of common deflection amplifiers being configured to commonly control the plurality of objective deflectors arranged in a same multiple-beam set; a plurality of individual ON/OFF mechanisms configured to individually turn ON/OFF a beam irradiated from each irradiation source; and one or more multiple-beam clusters including the plurality of multiple-beam sets.
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3.再颁专利公开(公告)号：USRE47561E1
公开(公告)日：2019-08-06
申请号：US15150081
申请日：2016-05-09
IPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01L21/30 , H01J37/28 , H01J37/317
摘要： A multi charged particle beam writing method includes calculating first shot positions of multiple beams, each of which includes a distortion amount of an irradiating corresponding beam, in a case of irradiating each beam, based on control grid intervals, calculating first condition positions based on a pre-set condition, each of which is arranged in a corresponding first region surrounded by closest second shot positions of 2×2 in length and width of the first shot positions, calculating, for each of second regions respectively surrounded by closest second condition positions of the first condition positions, an area density of a figure pattern in overlapping with a second region concerned, calculating an irradiation amount or an irradiation time of each beam whose corresponding first shot position is in a corresponding second region, based on an area density, and writing a pattern by irradiating a beam of the calculated irradiation amount or time.
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4.发明授权公开(公告)号：US10020159B2
公开(公告)日：2018-07-10
申请号：US15384021
申请日：2016-12-19
IPC分类号： H01J37/317 , H01J37/04
CPC分类号： H01J37/045 , H01J37/3174 , H01J37/3177 , H01J2237/0432 , H01J2237/0435 , H01J2237/31771 , H01J2237/31774
摘要： A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.
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5.发明申请公开(公告)号：US20170345612A1
公开(公告)日：2017-11-30
申请号：US15591767
申请日：2017-05-10
IPC分类号： H01J37/04 , H01J37/317
CPC分类号： H01J37/045 , H01J37/3177 , H01J2237/0435 , H01J2237/31774
摘要： A blanking device for multi charged particle beams includes a first substrate, in which plural first openings are formed in an array, to form multi-beams, a second substrate in which plural second openings are formed in an array, where a corresponding beam of the multi-beams passes through each of the plural second openings, plural control electrodes, which are on the second substrate and each of which is close to a corresponding one of the plural second openings and arranged not to be directly exposed to other second opening adjacent to the corresponding one of the plural second openings, to be switchably applied with first and second potentials, plural counter electrodes, each of which is facing a corresponding one of the plural control electrodes, to be applied with the second potential, and a shield film provided between the first substrate and the plural control electrodes.
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6.发明授权公开(公告)号：US09691585B2
公开(公告)日：2017-06-27
申请号：US14699216
申请日：2015-04-29
IPC分类号： H01J37/147 , H01J37/20 , H01J37/302 , H01J37/317 , H01J37/04
CPC分类号： H01J37/1471 , H01J37/045 , H01J37/147 , H01J37/20 , H01J37/302 , H01J37/3026 , H01J37/317 , H01J37/3174 , H01J37/3177 , H01J2237/043 , H01J2237/0435 , H01J2237/202 , H01J2237/20278 , H01J2237/20285 , H01J2237/20292 , H01J2237/304 , H01J2237/30483 , H01J2237/3175
摘要： A multi charged particle beam writing method includes, shifting a writing position of each corresponding beam to a next writing position by performing another beam deflection of multi charged particle beams, in addition to the beam deflection for a tracking control, while continuing the beam deflection for the tracking control after the maximum writing time has passed; emitting the each corresponding beam in the “on” state to the next writing position having been shifted of the each corresponding beam, during a corresponding writing time while continuing the tracking control; and returning a tracking position such that a next tracking start position is a former tracking start position where the tracking control was started, by resetting the beam deflection for the tracking control after emitting the each corresponding beam to the next writing position having been shifted at least once of the each corresponding beam while continuing the tracking control.
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7.发明申请CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD 有权充电颗粒光束写字装置和充电颗粒光束写字方法公开(公告)号：US20130149646A1
公开(公告)日：2013-06-13
申请号：US13706903
申请日：2012-12-06
发明人： Takanao TOUYA , Munehiro Ogasawara
IPC分类号： G21K5/08
CPC分类号： G21K5/08 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3174 , H01J2237/31774 , H01J2237/31776
摘要： Provided is a charged particle beam writing apparatus including a stage which a sample can be mounted thereon, an irradiation unit which emits a charged particle beam to be irradiated on the sample, and an aperture plate which includes a first opening portion to shape the charged particle beam. The aperture plate has a stacked structure of a first member and a second member, and a position of an end portion of the first opening portion in the second member is recessed from the position of the end portion of the first opening portion in the first member.
摘要翻译： 本发明提供了一种带电粒子束书写装置，包括可以将样品安装在其上的阶段，发射照射在样本上的带电粒子束的照射单元和包括第一开口部分以形成带电粒子的孔板 光束。 孔板具有第一构件和第二构件的堆叠结构，并且第二构件中的第一开口部的端部的位置从第一构件中的第一开口部的端部的位置凹陷 。
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公开(公告)号：US11574793B2
公开(公告)日：2023-02-07
申请号：US16879919
申请日：2020-05-21
发明人： Kazuhiko Inoue , Munehiro Ogasawara
IPC分类号： H01J37/153 , H01J37/09 , H01J37/141
摘要： Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.
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公开(公告)号：US20200211812A1
公开(公告)日：2020-07-02
申请号：US16726003
申请日：2019-12-23
发明人： Kazuhiko INOUE , Atsushi Ando , Munehiro Ogasawara , John Hartley
IPC分类号： H01J37/153 , H01J37/12 , H01J37/317
摘要： A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.
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10.发明授权公开(公告)号：US10074515B2
公开(公告)日：2018-09-11
申请号：US15183130
申请日：2016-06-15
发明人： Munehiro Ogasawara
IPC分类号： H01J37/30 , H01J37/317 , H01J37/302
CPC分类号： H01J37/3174 , H01J37/3026 , H01J2237/31764 , H01J2237/31776
摘要： According to one aspect of the present invention, a charged particle beam lithography method includes forming, such that a shape identical to a first figure pattern obtained using a first charged particle beam having a first resolution can be obtained by superimposing a plurality of second figure patterns, said plurality of second figure patterns that have different widths and are obtained by using a second charged particle beam having a second resolution higher than the first resolution; and performing multiple writing of the plurality of second figure patterns, which are stacked, by using the second charged particle beam.
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