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    Photonic quantum ring laser for low power consumption display device
    1.
    发明申请
    Photonic quantum ring laser for low power consumption display device 审中-公开
    光子量子环激光器用于低功耗显示设备

    公开(公告)号：US20070081569A1

    公开(公告)日：2007-04-12

    申请号：US10578619

    申请日：2005-03-23

    申请人： O'Dae Kwon ,  Joongwoo Bae ,  Sung-Jae An ,  Dongkwon Kim

    发明人： O'Dae Kwon ,  Joongwoo Bae ,  Sung-Jae An ,  Dongkwon Kim

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/1075 ,  H01S5/18358 ,  H01S5/341 ,  H01S5/3432

    摘要： A three-dimensional (3D) photonic quantum ring (PQR) laser for a low power consumption display, wherein the PQR laser has a sufficient small radius to adjust an inter-mode spacing (IMS) of oscillation modes discretely multi-wavelength-oscillating in an envelope wavelength range within the gain profile of a given semiconductor material of the PQR laser so that the IMS has a maximal value and the number of the oscillation modes is minimized. The PQR laser exhibits multi-wavelength oscillation characteristics according to a 3D toroidal cavity structure, and is designed to exhibit a threshold current lower than those of LEDs and to have multi-wavelength modes in an envelope wavelength range of several nm to several tens of nm. The PQR laser consumes reduced power while maintaining desired color and high brightness equal to those of the LEDs, through an adjustment of the multi-wavelength oscillation characteristics and IMS of the PQR laser.

    摘要翻译： 一种用于低功耗显示器的三维（3D）光子量子环（PQR）激光器，其中PQR激光器具有足够小的半径以调节离散地多波长振荡的振荡模式的模间距离（IMS） 在PQR激光器的给定半导体材料的增益分布内的包络波长范围，使得IMS具有最大值，并且振荡模式的数量被最小化。 PQR激光器根据3D环形腔结构显示出多波长振荡特性，并且被设计为表现出低于LED的阈值电流，并且在几nm至几十nm的包络波长范围内具有多波长模式 。 通过调整PQR激光器的多波长振荡特性和IMS，PQR激光器通过调整多波长振荡特性和IMS来消耗功率，同时保持与LED的相同的期望的颜色和高亮度。

    Hyperboloid-drum structures and method of fabrication of the same using ion beam etching
    3.
    发明申请
    Hyperboloid-drum structures and method of fabrication of the same using ion beam etching 审中-公开
    双曲面鼓结构及其制造方法使用离子束蚀刻

    公开(公告)号：US20050230697A1

    公开(公告)日：2005-10-20

    申请号：US11078227

    申请日：2005-03-11

    申请人： O'Dae Kwon ,  Jun-Youn Kim ,  Sung-Jae An

    发明人： O'Dae Kwon ,  Jun-Youn Kim ,  Sung-Jae An

    IPC分类号： H01L21/3065 ,  H01L29/06 ,  H01L29/22 ,  H01L31/0336 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01L29/0657 ,  H01L33/105 ,  H01L33/20 ,  H01S5/18344 ,  H01S5/18352 ,  H01S5/2086 ,  H01S5/3412 ,  H01S5/3432 ,  H01S2301/176

    摘要： The present invention relates to a method of mass fabricating a hyperboloid-drum element which is uniform in size and with the diameter of an active layer (active region or gain medium) ranging from tens of nm to less than a few μm, and to an element fabricated thereby. According to the present invention, the fabrication method of the hyperboloid-drum element comprises forming an epitaxial layer which includes an n-type semiconductor joined with a p-type semiconductor on a substrate and an active region near a border region and a boundary between the n-type semiconductor and the p-type semiconductor; and etching the epitaxial layer into a shape of the hyperboloid-drum having the minimum diameter at the active region by an ion-beam etching method. The hyperboloid-drum element fabricated in accordance with the present invention has advantages of uniformity in size and good reproducibility.

    摘要翻译： 本发明涉及一种大体积制造双组织鼓元件的方法，所述双曲面鼓元件的尺寸是均匀的，并且具有几十纳米到小于几毫米的有源层（有源区或增益介质）的直径， 由此制造的元件。 根据本发明，双曲面鼓元件的制造方法包括形成外延层，该外延层包括在基板上与p型半导体结合的n型半导体和边界区域附近的有源区域以及 n型半导体和p型半导体; 并且通过离子束蚀刻方法将外延层蚀刻成在有源区具有最小直径的双曲面滚筒的形状。 根据本发明制造的双曲面鼓元件具有尺寸均匀性和良好重现性的优点。